Abstract: Narrow bandgap semiconductors like InSb are very suitable for high-performance room temperature infrared photodetectors, but the fragile nature of the wafer materials hinders their application as inflexible/wearable devices. Here, we present a method to fabricate a photodetector device of assembled crystalline InSb nanowires (NWs) arrays on a flexible substrate that balances the high performance and flexibility therefore facilitate its application in wearable devices. The InSb NWs were synthesized by means of vapor-liquid-solid (VLS) technique, with gold nanoclusters as seeding particles. The morphological and crystal properties were investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM), which revealed the unique spike shape and high crystallinity with (111) and (220) planes of InSb NWs. The flexible infrared photodetector devices were fabricated by transferring the nanowires onto transparent and stretchable polydimethylsiloxane (PDMS) substrate with pre-deposited gold electrodes. Current versus time measurement of photodetector devices under light shown photo-responsivity and sensitivity to mid-IR at the bias as low as 0.1V while attached to curved surfaces (suitable for skin implants). High-performance NW device yields efficient rise and decay times down to 1 second and short time lag for infrared detection. Based on dark current, calculated specific detectivity of the flexible photodetector was 1.4 x 1012 Jones. The performance and durably render such devices to be promising application as wearable infrared photodetectors.