注册

      
    

Department of Applied Physics
Xi’an Jiaotong University
Xi’an, Shaanxi 710049, P.R China
Tel: +86-29-82663128
Email: gdchen@mail.xjtu.edu.cn

 

Guangde Chen
Professor, School of Science
Xi'an Jiaotong University

    

Education
 .Fudan UniversityShanghai, China 
  B.S. Physics1978.02-1982.01 
 .Xi'an Jiaotong UniversityXi'an, China 
  M.S. Optics1985.05-1989.09 
    

Experience
 .Teaching AssistantXi’an Jiaotong University, China 
  Department of Applied Physics1982.02.-1987.10 
 .LecturerXi’an Jiaotong University, China 
  Department of Applied Physics1987.11-1992.10 
 .Associate professorXi’an Jiaotong University, China 
  Department of Applied Physics1992.11-1997.10 
 .Associate HeadXi’an Jiaotong University, China 
  Department of Applied Physics1993.05-1994.06 
 .Research professorKansas State University, USA 
  Department of Physics1994.06-1995.12 
 .Deputy DeanXi’an Jiaotong University, China 
  School of Science1996.04-2003.11 
 .Visiting professorUniversity of Inchon, South Korea 
  Department of Physics1997.02-1997.04 
 .Research professorKansas State University, USA 
  Department of Physics2001.07-2001.12 
 .DirectorXi’an Jiaotong University, China 
  College Physics Foundation Lab1997.06-2004.09 
 .ProfessorXi’an Jiaotong University, China 
  Department of Applied Physics1997.11-present 
    

Awards
 .The First Prize of Xi’an Jiaotong University Scientific and Technological Award1997 
 .The Second Prize of Shaanxi Scientific and Technological Award2003 
 .The Second Prize of Shaanxi Scientific and Technological Award2004 
 .The First Prize of Shaanxi Teaching Achievement Award2005 
 .The Second Prize of National Teaching Achievement Award2005 
    

Research
 1. MATERIALS GROWTH 
  
To optimize growth conditions for III-nitrides, particularly for AlN. New methods to further reduce crystal defect density and enhanced doping efficiency will be explored. Because of our unique materials characterization capabilities, we are equipped with eyes for monitoring the material quality as well as for probing the fundamental optical properties of a wide range of semiconducting materials.
 
  
 
 2. OPTICAL STUDIES 
  
To investigate the mechanisms of optical transitions, light emitting diode emission, and lasing in nitride materials, to understand the fundamental optical transitions and dynamic processes, to study the physics components of nitride based optoelectronic devices, and to provide input for new approaches toward the improvement of materials quality and the optimization of optoelectronic devices.
 
  
 
 3. THEORETICAL CALCULATION 
  
Focused on developing first-principles electronic structure theory of solids, which includes studying: (i) electronic structures and stabilities of alloys, superlattices and interfaces; (ii)magnetic properties of semiconductors; (iii) optoelectronic properties of photovoltaic and light-emitting materials; (iv) defect physics in semiconductors and nanocrystals.
 
    

Membership
 .Member of a council, Chinese Physical Society 
 .Member, Steering Committee of Physics Education, Ministry of Education, China 
    

Publications
  
1. Ye Honggang, Chen Guangde, Wu Yelong, Structural and electronic properties of the adsorption of oxygen on AlN (10-10) and (11-20) surfaces: a first-principles study, Journal of Physical Chemistry C, 115, 1882 (2011);pdfPDF
 
  
 
  
2. Ye Honggang, Chen Guangde, Wu Yelong, Zhu Youzhang, Theoretical study of the stabilization mechanisms of the different stable oxygen incorporated (10-10) surfaces of III-nitrides. Journal of Applied Physics, 107, 043529(2010);pdfPDF
 
  
 
  
3. Ye Honggang, Chen Guangde, Wu Yelong, Zhu Youzhang, Wei Su-Huai, Stability of a planar-defect structure of the wurtzite AlN (10-10) surface: Density functional study, Physical Reviev B, 80, 033301(2009);pdfPDF
 
  
 
  
4. Wu Yelong, Chen Guangde, Ye Honggang, Zhu Youzhang, Wei Su-Huai, Origin of the phase transition of AlN, GaN, and ZnO nanowires, Applied Physics Letters, 94, 253101(2009);pdfPDF
 
  
 
  
5. Wu Yelong, Chen Guangde, Ye Honggang, Zhu Youzhang, Wei Su-Huai, Structural and electronic properties of 0001 AIN nanowires: A first-principles study, Journal of Applied Physics,104,084313 (2008);pdfPDF     
 
 ... more ... 

         
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