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教授 博士生导师 (理学院)



陈光德 教授
电  话:029-86652001 
邮  编:710049 
地  址:陕西省西安市咸宁西路28号

电  话:029-82663128   
地  址:西安交通大学材料与基础






    陈光德教授在国内外期刊共发表论文100余篇,其中SCI收录论文80余篇,近30篇发表在Applied Physics Letters, Physical Review B, Journal of Applied Physics等物理学国际著名期刊。截止2018年12月共被引用1100余次,其中三篇论文的单篇引用次数超过百次。




•  Guo Lu’an , Wang Yitao, Kaya Dogan, Palmer Richard E, Chen Guangde, Guo Quanmin. Orientational Epitaxy of van der Waals Molecular Heterostructures [J]. Nano Letters, 2018, 18(8): 5257-5261.

•  Duan xiangyang, Ma Chao, Jin Wentao, et al. The stabilization mechanism and size effect of nonpolar-to-polar crystallography facet tailored ZnO nano/micro rods via a top-down strategy [J]. Physical Chemistry Chemical Physics, 2018, 20(27): 18455-18462.

•  Han Han, Wu Yelong, Ma Chao. Optimization Design of a Multibusbar Structure: The Using of a Conductive Belt [J]. International Journal of Photoenergy, 2018.

•  Su Zhicheng, Ye Honggang (co-first), Z. Xiong, Q. Lou, Z. Zhang, F. Tang, J.Y. Tang, J.Y. Dai, C.X. Shan, and S.J. Xu, Understanding and manipulating luminescence in carbon nanodots, Carbon 126, 58 (2018).

• Ye Honggang, Su Zhicheng, Tang Fei, Bao Yitian, Lao Xiangzhou et al. Probing defects in ZnO by persistent phosphorescence. Opto-Electronic Advances 1, 180011 (2018).

• Lao Xiangzhou, Yang Zhi, Su Zhicheng, Wang Zilan, Ye Honggang, Wang Minqiang, Yao Xi, and Xu Shijie, Luminescence and thermal behaviors of free and trapped excitons in cesium lead halide perovskite nanosheets, Nanoscale 10, 9949 (2018).




•  Jin Wentao, Chen Guangde, Duan Xiangyang, et al. Adsorption behavior of formaldehyde on ZnO (10(1)over-bar0) surface: A first principles study [J]. Applied Surface Science, 2017, 423:451-456.

•  Yin Yuan, Huang Yang, Wu Yelong, et al. Exploring Emerging Photovoltaic Materials Beyond Perovskite: The Case of Skutterudite [J]. Chemistry of Materials, 2017, 29(21): 9429-9435.

•  Duan Xiangyang, Chen guangde, Gao Peihomg, et al. Crystallography facet tailoring of carbon doped ZnO nanorods via selective etching [J]. Applied Surface Science, 2017, 406:186-191.

•  Ye Honggang, Su Zhicheng, Tang Fei, Wang Mingzheng, Chen Guangde, Wang Jian and Xu Shijie. Excitation Dependent Phosphorous Property and New Model of the Structured Green Luminescence in ZnO. Scientific Reports 7:41460, 2017.

•  Ye Honggang, Su Zhicheng, Tang Fei, Chen Guangde, Wang Jian, Xu Ke and Xu Shijie. Role of Free Electrons in Phosphorescence in N-Type Wide Bandgap Semiconductors. Physical Chemistry Chemical Physics 19:30332–30338, 2017.

•   Ye Honggang, Su Zhicheng, Tang Fei, Zheng Changcheng, Chen Guangde, Wang Jian and Xu Shijie. Extinction of the Zero-Phonon Line and the First-Order Phonon Sideband in Excitonic Luminescence of ZnO at Room Temperature: The Self-Absorption Effect. Science Bulletin 62:1525–1529, 2017.

•   Ma, Xiaoman, Ye Honggang*, Duan Xiangyang, Li Chu, Li Gaoming and Xu Shijie. Abnormal gas pressure sensitivity of the visible emission in ZnO quantum dots prepared by improved sol–gel method: the role of surface polarity. RSC Advances 7:29992–29997, 2017.

•   Zhou Xiao-yun, Ye Hong-gang*, Huang Ao and Lu Zhi-peng. Direct Evidences of Shallow Donor Level Enhanced Green Emission in ZnO Quantum Dots. Spectroscopy and Spectral Analysis 37:624–628, 2017.




•  Li Chan, Zhang Yu-Yang, Pennycook Timoty J, et al. Column-by-column observation of dislocation motion in CdTe: Dynamic scanning transmission electron microscopy [J]. Applied Physics Letters, 2016, 109(14):143107.

•  Yin Yuan, Chan Guangde, Duan Xiangyang, et al. First-principles study on native point defects of cubic cuprite Ag2O [J]. Journal of Applied Physics, 2016, 120(21):215707.

•  Gaoming Li, Jingwen Zhang, Guangde Chen, et al. Enhancement of photo-response via surface plasmon resonance induced by Ag nano-particles embedded in ZnO. Solid-State Electronics, 2016, 123:33-37.

•   Xiangyang Duan, Guangde Chen, Chu Li, et al. Tailoring the surface of ZnO nanorods into corrugated nanorods via a selective chemical etch method. Nanotechnology, 2016, 27(29):295601.

•   Yuan Yin, Guangde Chen , Honggang Ye, et al. A novel anion interstitial defect structure in zinc-blende materials: A first-principles study. Europhysics Letters, 2016, 114(3):36001.

•  Wendeng Huang, Guangde Chen, Zhaolin Yuan, et al. Ternary mixed crystal effects on interface optical phonon and electron-phonon coupling in zinc-blende GaN/Al x Ga 1− x N spherical quantum dots. Physica E: Low-dimensional Systems and Nanostructures, 2016, 76:164-168.

•  Li Shao, Honggang Ye, Yelong Wu, et al. Interaction between phosphorene and the surface of a substrate. Materials Research Express, 2016, 3(2):025013.




•   Xiangyang Duan, Guangde Chen, Lu’an Guo, et al. A template-free CVD route to synthesize hierarchical porous ZnO films. Superlattices & Microstructures, 2015, 88:501-507.

•   Lu’an Guo, Guangde Chen, Youzhang Zhu, et al. The growth of Sea-urchin-like AlN nanostructures by modified CVD and their Field Emission properties. Journal of Crystal Growth, 2015, 426:49-53.

•   Yelong Wu, Guangde Chen, Youzhang Zhu, et al. LDA+ U /GGA+ U, calculations of structural and electronic properties of CdTe: Dependence on the effective U, parameter. Computational Materials Science, 2015, 98:18-23.

•  Haibo Niu, Guangde Chen, Yelong Wu, et al. Spontaneous polarization and piezoelectric properties of AlN nanowires: Maximally localized Wannier functions analysis. Europhysics Letters, 2015, 111(6).

• Niu, Haibo; Chen, Guangde; Wu, Yelong; et al. Effect of oxygen vacancy and zinc interstitial on the spontaneous polarization of wurtzite ZnO: maximally localized Wannier functions analysis. European Physical Journal-Applied Physics, 2015, 20101(70).




•   Guojun Yan, Guangde Chen, Kai Sun, et al. Synthesis of meso/macroporous aluminum nitrides via aluminum alloy ceramization. Rsc Advances, 2014, 4(13):6840-6844.

•   Li Shao, Guangde Chen, Honggang Ye, et al. Electronic properties of MoS2 sandwiched between graphene monolayers. Europhysics Letters, 2014, 106(4):2890-2903.

•   Li Shao, Guangde Chen, Honggang Ye, et al. Theoretical study on electronic properties of MoS2 antidot lattices. Journal of Applied Physics, 2014, 116(11):113704-113704-5.

•  Wendeng Huang, Guangde Chen, Honggang Ye, et al. Ternary effects on the optical interface phonons in onion-like GaN/Al x Ga 1− x N quantum dots. Physics Letters A, 2014, 378(32-33):2443-2448.

•  Li Shao, Guangde Chen, Honggang Ye, et al. Sulfur dioxide molecule sensors based on zigzag graphene nanoribbons with and without Cr dopant. Physics Letters A, 2014, 378(7–8):667-671.

•  Haibo Niu, Guangde Chen, Yelong Wu, et al. Influence of vacancy on spontaneous polarization of wurtzite AlN: a maximally localized Wannier function study. Acta Physica Sinica -Chinese Edition-, 2014, 63(16):319-323.




•   Li, Guanqiang; Chen, Guangde; Peng, Ping; Cao, Zhenzhou; Ye, Honggang, "Manipulation of resonant tunneling by substrate-induced inhomogeneous energy band gaps in graphene with square superlattice potentials",  Physics Letters A 377( 40) : 2895-2900 (2013).

•   Ye, Honggang; Chen, Guangde; Niu, Haibo; Zhu, Youzhang; Shao, Li; Qiao, Zhijuan; "Structures and Mechanisms of Water Adsorption on ZnO(0001) and GaN(0001) Surface", Journal of Physical Chemistry C117(31): 15976-15983 ,(2013).

•   Liu, Xianglian; Wang, Hushan; Yan, Zhijun; et al. Chen Guangde, "The generation of dissipative solitons in an all-fiber passively mode-locked laser based on semiconduct type of carbon nanotubes absorber",  Optical Fiber Technology,   19(3) : 200-205,(2013).

•  Huang WD, Chen GD, Ye HG, Ren YJ, "mixed crystal effects on interface optical phonon and electron-interface optical phonon coupling in wurtzite GaN/AlxGa1-xN quantum wells", Optical Material, 35:1571(2013);pdfPDF

•  Li Shao, Guangde Chen, Honggang Ye, et al. Sulfur dioxide adsorbed on graphene and heteroatom-doped graphene: a first-principles study. Physics of Condensed Matter, 2013, 86(2):1-5.pdfPDF

•  Huang WD, Chen GD, Ye HG, Ren YJ, "Ternary mixed crystal effects on electron-interface optical phonon interactions in InxGa1xN/GaN quantum wells" Physica B, 410,33–41(2013); pdfPDF




•  Liu, Xianglian; Wang, Hushan; Yan, Zhijun; et al. Chen Guangde, " All-fiber normal-dispersion single-polarization passively mode-locked laser based on a 45 degrees-tilted fiber grating" Optics Express  20(17):19000 (2012). pdfPDF

•  Yan GuoJun; Liu XiaoLi; Chen GuangDe; et al. "Preparation of nano-porous AlN micro-rods"  Science China-Technological Sciences 55(6):1523 (2012). pdfPDF

•  Huang WD, Chen GD, Ren YJ, "Effect of ternary mixed crystals on interface optical phonons in wurtizte
InxGa1-xN/GaN quantum wells" Journal of Applied Physics, 112, 053704(2012); pdfPDF

•  Wu YL, Chen GD, Wei SH, Al-Jassim MM, Yan YF, "Unusual nonlinear strain dependence of valence-band splitting in ZnO" Physical Review B. 86(15):155205, (2012).aPDF

•  Qiao ZJ, Chen GD, Ye HG, Wu YL, Niu HB, Zhu YZ,"Electronic and structural properties of N-vacancy in AlN nanowires: A first-principles study" Chinese Physics B. 21(8):087101,(2012).aPDF




•  Wu YL, Chen GD, Wei SH, Al-Jassim MM, Yan YF, "Origin of charge separation in III-nitride nanowires under strain" Applied Physics Letters. 99(26):262103, (2011).aPDF

•  Ye HG, Chen GD, Wu YL,"Structural and electronic properties of the adsorption of oxygen on AlN (10-10) and (11-20) surfaces: a first-principles study" Journal of Physical Chemistry C. 115(5):1882,(2011).PDF




•  Ye HG, Chen GD, Wu YL, and Zhu YZ, "Theoretical study of the stabilization mechanisms of the different stable oxygen incorporated (10-10) surface of III-nitrides" Journal of Applied Physics. 107(04): 043529, (2010). PDF




•  Ye HG, Chen GD, Wu YL, Zhu YZ, and Wei SH, "Stability of a planar-defect structure of the wurtzite AlN (10(1)over-bar0) surface: Density functional study" Physical Review B. 80(3): 033301, (2009). PDF

•  Yan GJ, Chen GD, and Wu YL, "Nanoporous AlN particle production from a solid-state metathesis reaction" Chinese Physics B. 18(7): 2925-2927, (2009).

•  Yan GJ, Chen GD, Jiang BL, and Wu YL, "Preparations of porous AlN particles from an aluminum-magnesium alloy melt solution" Materials Letters. 63(26): 2205-2207, (2009).

•  Wu YL, Chen GD, Ye HG, Zhu YZ, and Wei SH, "Origin of the phase transition of AlN, GaN, and ZnO nanowires" Applied Physics Letters. 94(25): 253101, (2009). PDF

•  Wang RM and Chen GD, "LO Phonon-Plasmon Coupled Mode in Hexagonal InGaN Alloy" Spectroscopy and Spectral Analysis. 29(1): 138-141, (2009).

•  Wang RM and Chen GD, "Ultraviolet resonant Raman scattering in InGaN films" Acta Physica Sinica. 58(2): 1252-1256, (2009).

•  Wang HL, Lv HM, Chen GD, and Ye HG, "Synthesis of hexagonal AlN microbelts at low temperature" Journal of Alloys and Compounds. 477(1-2): 580-582, (2009).

•  Lu HM, Shi ZH, and Chen GD, "Synthesis of pure hexagonal phase aluminium nitride foam" Acta Physica Sinica. 58(9): 6403-6407, (2009).




•  Zhu YZ, Chen GD, Ye HG, Walsh A, Moon CY, and Wei SH, "Electronic structure and phase stability of MgO, ZnO, CdO, and related ternary alloys" Physical Review B. 77(24): 245209, (2008). PDF

•  Ye HG, Chen GD, Wu YL, Zhu YZ, and Wei SH, "Relaxation models of the (110) zinc-blende III-V semiconductor surfaces: Density functional study" Physical Review B. 78(19): 193308, (2008). PDF

•  Ye H, Chen G, Zhu Y, and Wei SH, "Asymmetry of adsorption of oxygen at wurtzite AlN (0001) and (000(1)over-bar) surfaces: First-principles calculations" Physical Review B. 77(3): 033302, (2008). PDF

•  Yan GJ, Chen GD, Lu HM, and Guo L, "Synthesis of single hexagonal-phase AlN nanocrystallines by a liquid-solid metathetical reaction in an organic solution" Journal of Wuhan University of Technology-Materials Science Edition. 23(3): 334-337, (2008).

•  Yan GJ, Chen GD, and Lu HM, "Solid-state metasynthesis and characterization of AlN nanocrystals" International Journal of Refractory Metals & Hard Materials. 26(1): 5-8, (2008).

•  Wu YL, Chen GD, Ye HG, Zhu YZ, and Wei SH, "Structural and electronic properties of 0001 AIN nanowires: A first-principles study" Journal of Applied Physics. 104(8): 084313, (2008). PDF




•  Yuan JS and Chen GD, "Instantaneous relaxation of photoconductivity in GaN film grown on vicinal sapphire substrate by MBE" Acta Physica Sinica. 56(7): 4218-4223, (2007).

•  Ye HG, Chen GD, Zhu YZ, and Lu HM, "First principle study of nitrogen vacancy in aluminium nitride" Chinese Physics. 16(12): 3803-3808, (2007).

 •  Ye HG, Chen GD, Wu YL, and Zhu YZ, "First principle study of the native defects in hexagonal aluminum nitride" Acta Physica Sinica. 56(9): 5376-5381, (2007).

 •  Yang JQ, Chen GD, Yuan XY, and Zhu YZ, Basic analysis of magnetic field in high temperature bulk superconductors, in 2006 BIMW: 2006 Beijing International Materials Week, Pts 1-4 - MAGNESIUM - ALUMINIUM MATERIALS - AEROSPACE MATERIALS - SUPERCONDUCTING AND FUNCTIONAL MATERIALS, S. Long, et al., Editors. 2007. p. 2115-2118.

•  Wang HL, Wang D, Chen GD, and Liu H, "Third-order nonlinear optical susceptibility of indium phosphide nanocrystals" Chinese Physics Letters. 24(9): 2600-2602, (2007).aPDF

•  Tang YH, Chen GD, Zhang CM, Lin YL, Liu HC, and Liu K, Optimization of the modified Sagnac imaging interferometer for full compensation, in 27th International Congress on High Speed Photography and Photonics, Prts 1-3, p. G2791-G2791,(2007).

•  Lv HM, Chen GD, Ye HG, and Yan GJ, "Synthesis of monocrystal aluminum nitride nanowires at low temperature" Journal of Applied Physics. 101(5): 053526, (2007).aPDF

•  Lv HM, Chen GD, Yan GJ, and Ye HG, "Synthesis of hexagonal monocrystal AlN microtubes and nanowires at low temperature" Chinese Physics. 16(9): 2814-2817, (2007).

•  Lu HM, Chen GD, Yan GJ, and Ye HG, "The growth mechanism of monocrystal aluminum nitride nanowires at low temperature" Acta Physica Sinica. 56(5): 2808-2812, (2007).




•  Yang H, Wang H, Chen GD, and Wu GM, "Influence of the charge regulator strategy on state of charge and lifetime of VRLA battery in household photovoltaic systems" Solar Energy. 80(3): 281-287, (2006).

•  Yan GJ, Chen GD, and Lu HM, "Synthesis and optical properties of hexagonal aluminum nitride nanocrystals" Acta Chimica Sinica. 64(16): 1688-1692, (2006).

•  Wang RM, Chen GD, and Zhu YZ, "Micro-raman scattering study of hexagonal InGaN epitaxial layer" Acta Physica Sinica. 55(2): 914-919, (2006).

•  Moon CY, Wei SH, Zhu YZ, and Chen GD, "Band-gap bowing coefficients in large size-mismatched II-VI alloys: first-principles calculations" Physical Review B. 74(23): 233202, (2006).

•  Liu DD, Chen GD, and Xu ZF, "Analysis of three coupled defects in one-dimensional photonic bandgap structure" Chinese Physics Letters. 23(3): 591-594, (2006).




•  Tang YH, Zhang CM, Liu HC, Chen GD, and He J, "Study of the technique of 4-face coated pyramid prism for measurement of upper atmospheric wind field" Acta Physica Sinica. 54(9): 4065-4071, (2005).

•  Chen GD, Zhu YZ, Yan GJ, Yuan JS, Kim KH, Lin JY, and Jiang HX, "Time-resolved photoluminescence studies of indium-rich InGaN alloys" Chinese Physics Letters. 22(2): 472-474, (2005).




•  Diao JJ, Chen GD, Qiu FS, and Yan GJ, "Improved liquid-solid-gas interface deposition of nanoparticle thin films" Chinese Physics. 13(11): 1927-1930, (2004).




•  Yuan JS, Chen GD, Qi M, Li AZ, and Xie LJ, "Surface properties of unintentionally doped GaN film and its contact behaviour with Ni/Cr/Au compound metals" Chinese Physics Letters. 20(10): 1841-1843, (2003).

 •  Wang H, Yang H, Yu HC, and Chen GD, "Influence of gettering and passivation on uniformity of the electrical parameters in monolithic multicrystalline silicon solar cell" Solid-State Electronics. 47(8): 1363-1367, (2003).

•  Diao JJ, Qiu FS, Chen GD, and Reeves ME, "Surface vertical deposition for gold nanoparticle film" Journal of Physics D-Applied Physics. 36(3): L25-L27, (2003).

•  Diao JJ, Chen GD, Xi C, Fan ZY, and Yuan JS, "Optical resonance of metal-coated nanoshell" Chinese Physics. 12(1): 100-106, (2003).

•  Chen M, Tang TT, Chen GD, and Zhang PH, "Analysis of electro-electro transmission efficiency of SAW IDTs system by six-port equivalent circuit model" Chinese Journal of Electronics. 12(4): 545-547, (2003).




•  Yang H, Wang H, Chen GD, Yu HC, and Xi JP, "A study of electrical uniformity for monolithic polycrystalline silicon solar cells" Solar Energy Materials and Solar Cells. 71(3): 407-412, (2002).

•  Wang H, Yang H, Yu HC, Xi JP, Hu HX, and Chen GD, "Weak light effect in multicrystalline silicon solar cells" Microelectronics Journal. 33(8): 671-674, (2002).

•  Diao JJ, Qiu FS, Chen GD, Xi CC, and Song Y, "Photoluminescence properties study of the Au/Au2S nanoshell" Canadian Journal of Physics. 80(6): 707-711, (2002).




•  Yuan JS, Chen GD, Qi M, Li AZ, and Xu Z, "XPS and AES investigation of GaN films grown by MBE" Acta Physica Sinica. 50(12): 2429-2433, (2001).

•  Diao JJ and Chen GD, "Electromagnetic cavity resonant absorption of the gold nanoshell" Journal of Physics D-Applied Physics. 34(14): L79-L82, (2001).




•  Smith M, Chen GD, Lin JY, Jiang HX, Salvador A, Sverdlov BN, Botchkarev A, Morkoc H, and Goldenberg B, "Mechanisms of band-edge emission in Mg-doped p-type GaN" Applied Physics Letters. 68(14): 1883-1885, (1996). PDF

 •  Smith M, Chen GD, Lin JY, Jiang HX, Khan MA, Sun CJ, Chen Q, and Yang JW, "Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition" Journal of Applied Physics. 79(9): 7001-7004, (1996).

•  Smith M, Chen GD, Lin JY, Jiang HX, Khan MA, and Chen Q, "Time-resolved photoluminescence studies of InGaN epilayers" Applied Physics Letters. 69(19): 2837-2839, (1996).

•  Chen GD, Smith M, Lin JY, Jiang HX, Wei SH, Khan MA, and Sun CJ, "Fundamental optical transitions in GaN" Applied Physics Letters. 68(20): 2784-2786, (1996). PDF

•  Chen GD, Smith M, Lin JY, Jiang HX, Salvador A, Sverdlov BN, Botchkarv A, and Morkoc H, "Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy" Journal of Applied Physics. 79(5): 2675-2683, (1996). PDF

•  Chen GD, Smith M, Lin JY, Jiang HX, Khan MA, and Sun CJ, "Excitonic transitions in GaN epitayer layers grown by MOCVD", in 17th Congress of the International Commission for Optics: Optics for Science and New Technology, Pts 1 and 2, J.S. Chang, et al., Editors. p. 642-643,(1996). 

•  Chen GD, Lin JY, and Jiang HX, "Effects of electron mass anisotropy on Hall factors in 6H-SiC" Applied Physics Letters. 68(10): 1341-1343, (1996). PDF

•  Smith M, Chen GD, Lin JY, Jiang HX, Salvador A, Sverdlov BN, Botchkarev A, and Morkoc H, "DYNAMICS OF A BAND-EDGE TRANSITION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY" Applied Physics Letters. 66(25): 3474-3476, (1995).

•  Smith M, Chen GD, Lin JY, Jiang HX, Khan MA, and Sun CJ, "ACCEPTOR-BOUND EXCITON RECOMBINATION DYNAMICS IN P-TYPE GAN" Applied Physics Letters. 67(22): 3295-3297, (1995).

•  Smith M, Chen GD, Li JZ, Lin JY, Jiang HX, Salvador A, Kim WK, Aktas O, Botchkarev A, and Morkoc H, "EXCITONIC RECOMBINATION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY" Applied Physics Letters. 67(23): 3387-3389, (1995).




颜国君,陈光德,固相复分解合成纳米AlN的方法,中华人民共和国发明专利,专利号:ZL2005 1 0042985.5,2007年5月.


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