奖项

没有找到条目。
奖项名称 获奖年份 奖项类型 奖项等级 申报部门
单粒子效应×××的建立及应用 2002 省部级科技成果奖 一等奖 总装备部
单粒子烧毁和栅穿效应的×××方法与实验研究 2001 省部级科技成果奖 三等奖 总装备部
×××辐射效应机理和规律研究 1998 省部级科技成果奖 三等奖 国防科工委

专利

没有找到条目。
专利名称 申请号 专利类型 申请日期
一种碳纳米管同位素电池 ZL2009 1 0023563.1 发明 2009.08.11
一种消除存储器件总剂量效应的数据取反方法 ZL2009 1 0023281.1 发明 2009.07.10
复合型同位素电池 ZL2009 1 0022320.6 发明 2009.05.04
微通道板型复合同位素电池 ZL2008 1 0017576.3 发明 2008.02.29
用于pA量级质子束流测量的法拉第探测器 ZL 01 2 46812.6 实用新型 2002.07.06

论文

 

1.       Wei, Jia-Nan; He, Chao-Hui*; Li, Peiet al. Impact of layout and profile optimization for inverse-mode SiGe HBT on SET and TID responses. MICROELECTRONICS RELIABILITY, 105:, FEB 2020, IF:1.483, Q3, SCI: WOS:000510971600002, DOI:10.1016/j.microrel.2019.113561

2.       Hu Zhi-Liang; Yang Wei-Tao; Li Yong-Hong; Li yang;He chaohuiet al. Atmospheric neutron single event effect in 65 nm microcontroller units by using CSNS-BL09. ACTA PHYSICA SINICA , 68(23): 238502, DEC 5 2019, IF:0.643, Q4, SCI: WOS:000501344000033, DOI: 10.7498/aps.68.20191196

3.       Pei Li, ChaoHui He*, HongXia Guo, JinXin Zhang, YongHong Li, JiaNan Wei. Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes. MICROELECTRONICS RELIABILITY, 103: 113499, DEC 2019, IF:1.483, Q3, SCI: WOS:000500386300006,DOI: 10.1016/j.microrel.2019.113499

4.       Weitao Yang, Yonghong Li, Yang Li, Zhiliang Hu, Fei Xie, Chaohui He*,Songlin Wang,Bin Zhou,Huan He,Waseem Khan, Tianjiao Liang. Single-event effects induced by medium-energy protons in 28 nm system-on-chip. NUCLEAR SCIENCE AND TECHNIQUES, 30(10):151, OCT 2019,IF: 0.961, Q3, SCI: WOS:000488225200007, DOI: 10.1007/s41365-019-0672-5

5.       Xuecheng Du, Chaohui He*, Shuhuan Liu, Dongyang Luo, Xiaozhi Du, Weitao Yang, Yonghong Li, Yunyun Fan. Analysis of sensitive blocks of soft errors in the Xilinx Zynq-7000 System-on-Chip. Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 940: 125-128, OCT.1 2019, IF: 1.433, Q2, SCI: WOS:000475349600020, DOI: 10.1016/j.nima.2019.06.015

6.       Wei, JN; He, CH*; Li, P; Li, YH; Guo, HX.Impact of displacement damage on single event transient charge collection in SiGe HBTs. Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment,938:29-35, SEP 11 2019, IF: 1.433,Q2, SCI: WOS:000472016300006,DOI: 10.1016/j.nima.2019.05.098

7.       Khan, Waseem; He, Chao-Hui*; Zhang, Qing-Min; Cao Yu. Design of CsI(TI) detector system to search for lost radioactive source. NUCLEAR SCIENCE AND TECHNIQUES,30(9)132SEP 2019, IF: 0.961,Q3, SCI: WOS:000482469600001,DOI: 10.1007/s41365-019-0658-3

8.       Liao, Wenlong; He, Chaohui*; He, Huan. Molecular dynamics simulation of displacement damage in 6H-SiC. RADIATION EFFECTS AND DEFECTS IN SOLIDS,174(9-10): 729-740, OCT 3 2019,IF: 0.636 Q4, SCI: WOS:000479919200001, DOI: 10.1080/10420150.2019.1649260

9.       Yang, Weitao; Li, Yonghong; Li, Yang; Atmospheric neutron single event effect test on Xilinx 28 nm system on chip at CSNS-BL09. MICROELECTRONICS RELIABILITY, 99: 119-124, AUG 2019, IF:1.483, Q3, SCI: WOS:000496833600013, DOI: 10.1016/j.microrel.2019.05.004

10.    Zhang, Jiahui; Liu, Wenbo; Chen, Piheng; He Chaohui. Molecular dynamics study of the interaction between symmetric tilt Sigma 5(210) < 0 0 1 > grain boundary and radiation-induced point defects in Fe-9Cr alloy. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,451: 99-103, JUL 15 2019,IF: 1.255,Q3, SCI: WOS:000472984300020, DOI: 10.1016/j.nimb.2019.05.014

11.    Wei, JN; He, CH Li, P; Li, YH ; Guo, HX. Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor. CHINESE PHYSICS B, 28(7): 076106, JUL 2019, IF: 1.469, Q3, SCI: WOS:000476831600006, DOI: 10.1088/1674-1056/28/7/076106

12.    Zhao, Wen; He, Chaohui; Chen, Wei; Single-Event Double Transients in Inverter Chains Designed With Different Transistor Widths. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 66(7): 1491-1499, JUL 2019, IF: 1.455, Q2, SCI: WOS:000476782600019, DOI: 10.1109/TNS.2019.2895610

13.    Li, Ruibin; Wang, Chenhui; Chen, Wei;He Chaohui. Synergistic Effects of TID and ATREE in Vertical NPN Bipolar Transistor. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 66(7): 1566-1573, JUL 2019, IF: 1.455, Q2, SCI: WOS:000476782600028, DOI: 10.1109/TNS.2019.2909690

14.    Yang, Weitao; Du, Xuecheng; Guo, Jinlong; Wei, Junze; Du, Guanghua; He, Chaohui*; Liu, Wenjing; Shen, Shuaishuai; Huang, Chengliang; Li, Yonghong; Fan, Yunyun. Preliminary single event effect distribution investigation on 28 nm SoC using heavy ion microbeam. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2019, 450:323-326,IF: 1.255,Q3,SCI: WOS:000474501400066, DOI: 10.1016/j.nimb.2018.09.038

15.    Li, Ruibin; He, Chaohui*; Chen, Wei; Contrast of latch-up induced by pulsed gamma rays in CMOS circuits after neutron irradiation and TID accumulation. MICROELECTRONICS RELIABILITY, 98: 42-48, JUL 2019, IF:1.483, Q3, SCI: WOS:000472692700006, DOI: 10.1016/j.microrel.2019.04.015

16.    Khan, Waseem; He, Chaohui*; Cao, Yu. HPGe detector efficiencies for extended sources using the Monte Carlo method. RADIATION EFFECTS AND DEFECTS IN SOLIDS,174(5-6): 548-558,JUN 3 2019, IF: 0.636,Q4, SCI: WOS:000474639500014, DOI: 10.1080/10420150.2019.1619733

17.    Liu, Yan; Chen, Wei; He, Chaohui; Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons. CHINESE PHYSICS B, 28(6): 067302, JUN 2019, IF: 1.469,Q3,SCI: WOS:000471648500002,DOI: 10.1088/1674-1056/28/6/067302

18.    Wei, Jia-Nan; He, Chao-Hui*; Li, Pei; Li, Yong-Hong. Research on SEE mitigation techniques using back junction and p(+) buffer layer in domestic non-DTI SiGe HBTs by TCAD. CHINESE PHYSICS B, 28(6): 068503,JUN 2019, IF: 1.469,Q3, SCI: WOS:000471658600002, DOI: 10.1088/1674-1056/28/6/068503

19.    Zong, Pengfei; Cao, Duanlin; Cheng, Yuan; He chaohui; Carboxymethyl cellulose supported magnetic graphene oxide composites by plasma induced technique and their highly efficient removal of uranium ions. CELLULOSE, 26(6): 4039-4060, APR 2019, IF: 4.379, Q1, SCI: WOS:000464849500029,DOI: 10.1007/s10570-019-02358-4

20.    Wei,JN;He,CH*;Li,P;Li,YH;G, HX. Simulation of substrate contact effects on heavy ion-induced current transient in SiGe HBT. MICROELECTRONICS RELIABILITY, 95: 28-35, APR 2019, IF:1.483, Q3, SCI: WOS:000464479300004,DOI: 10.1016/j.microrel.2019.02.011

21.    Li, Ruibin; He, Chaohui*; Chen, Wei; Impact of TID on latch up induced by pulsed irradiation in CMOS circuits. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 440: 95-100, FEB 1 2019,IF: 1.255,Q3, SCI: WOS:000456352200015, DOI: 10.1016/j.nimb.2018.11.036

22.    Khan, Waseem; He, Chaohui*. Calibration of HPGe Detector Efficiencies With Self-Absorption Correction of Gas Sphere Sources. JOURNAL OF NUCLEAR ENGINEERING AND RADIATION SCIENCE,5(1): 011018, JAN 2019, SCI: WOS:000457710900023, DOI: 10.1115/1.4041338

23.    Wei, JN; Guo, HX; Zhang, FQ; He, CH*; Ju, AA; Li, YH. Single event effects in commercial FRAM and mitigation technique using neutron-induced displacement damage. MICROELECTRONICS RELIABILITY, 92: 149-154, JAN 2019, IF:1.483, Q3, SCI: WOS:000456760500018,DOI: 10.1016/j.microrel.2018.12.004

24.    Zong, Pengfei; Cao, Duanlin; Cheng, Yuan;He Chaohui. Enhanced performance for Eu(iii) ion remediation using magnetic multiwalled carbon nanotubes functionalized with carboxymethyl cellulose nanoparticles synthesized by plasma technology. INORGANIC CHEMISTRY FRONTIERS,5(12): 3184-3196, DEC 1 2018, IF: 5.934, Q1, SCI: WOS: 000452114200024,DOI: 10.1039/c8qi00901e

25.    Du, Xiaozhi; Luo, Dongyang; He, Chaohui; A Fine-Grained Software-Implemented DMA Fault Tolerance for SoC Against Soft Error. JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 34(6): 717-733,DEC 2018, IF: 0.676,Q4, SCI: WOS:000451435700009, DOI: 10.1007/s10836-018-5757-2

26.    Xu, Mengxuan; Chen, Liang; Liu, Bo; He Chaohui; Effects of photonic crystal structures on the imaging properties of a ZnO:Ga image converter. OPTICS LETTERS, 43(22): 5647-5650, NOV 15 2018, IF: 3.866,Q1, SCI: WOS:000450159700040, DOI: 10.1364/OL.43.005647

27.    Shen Shuai-Shuai; He Chao-Hui*; Li Yong-Hong. Non-ionization energy loss of proton in different regions in SiC. ACTA PHYSICA SINICA,67(18): 182401, SEP 20 2018, IF: 0.644,Q4, SCI: WOS:000445538300004,DOI: 10.7498/aps.67.20181095

28.    Zhao Wen, He Chaohui, Chen, Wei, Chen Rongmei, Cong Peitian, Zhang Fengqi, Wang Zujun Shen Chen, Zheng Lisang, Guo Xiaoqiang. Single-event multiple transients in guard-ring hardened inverter chains of different layout designs. MICROELECTRONICS RELIABILITY, 2018.8, 87: 151-157, IF: 1.483, Q3,SCI: WOS:000441856500017, DOI:10.1016/j.microrel. 2018.06.014

29.    Zhang, Jin-xin; Guo, Qi; Guo, Hong-xia; He Chaohui. Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases. MICROELECTRONICS RELIABILITY, 84: 105-111, MAY 2018, IF: 1.483, Q3, SCI: WOS:000431939000012,DOI: 10.1016/j.microrel.2018.03.007

30.    Y.Y. Fan, X.D. Cai, C.H. He, et al. On-Orbit Single Event Effect of the Digital Signal Processor of the Alpha Magnetic Spectrometer and Discrepancy Analysis for the Rate Prediction [J]. IEEE Transactions on Nuclear Science, 2018, 65(5): 1-7, IF: 1.455, Q2,SCI: WOS: 000432470500008, DOI: 10.1109/TNS.2018.2826538

31.    Xu, Mengxuan; Chen, Liang; Yao, Zhiming;He Chaohui; Transient Radiation Imaging Based on a ZnO:Ga Single-Crystal Image Converter. SCIENTIFIC REPORTS, 8: 4178, MAR 8 2018, IF: 4.525, Q1, SCI: WOS:000426825900013, DOI: 10.1038/s41598-018-22615-z

32.    Liu, W. B.; Zhang, J. H.; Ji, Y. Z.;He, C.H.; Comparative study of He bubble formation in nanostructured reduced activation steel and its coarsen-grained counterpart, JOURNAL OF NUCLEAR MATERIALS, 500: 213-219, MAR 2018, IF: 2.547,Q1, SCI: WOS: 000425108100024,DOI: 10.1016/j.jnucmat.2017.12.041

33.    Du, Xiaozhi, Luo, Dongyang, Shi, Kailun, He, Chaohui, Liu, Shuhuan. FFI4SoC: a Fine-Grained Fault Injection Framework for Assessing Reliability against Soft Error in SoC. JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, FEB 2018,34(1): 15-25, IF: 0.676,Q4, SCI: WOS:000426794800003,DOI: 10.1007/s10836-017-5702-9

34.    Zang, Hang; Cao, Xing-Qing; He, Chao-Hui; Evaluation of interfacial properties in SiC composites using an improved cohesive element method. NUCLEAR SCIENCE AND TECHNIQUES, 29(2): 25, FEB 2018, IF: 0.961,Q3, SCI: WOS:000427326900009, DOI: 10.1007/s41365-018-0365-5

35.    Weitao Yang, Xuecheng Du, Chaohui He, Shuting Shi, Li Cai, Ning Hui, Gang Guo, and Chengliang Huang. Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip. IEEE Transactions on Nuclear Science, 2018, 65(1): 545-549. IF: 1.455, Q2, SCI: WOS:000422922000005,DOI: 10.1109/TNS.2017.2776244

36.    Khan Waseem, Zhang Qingmin, He Chaohui, Saleh Muhammad. Monte Carlo simulation of the full energy peak efficiency of an HPGe detector. APPLIED RADIATION AND ISOTOPES, JAN 2018,131:67-70, IF:1.343,Q2, SCI:WOS:000419421300011, DOI:10.1016/j. apradiso.2017.11.018

37.    Zhang, Jinxin; Guo, Hongxia; Zhang, Fengqi;He Chaohui; Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor. SCIENCE CHINA-INFORMATION SCIENCES, 60(12): 120404, DEC 2017, IF: 2.731,Q2,SCI: WOS:000419034600014,DOI: 10.1007/s11432-017-9249-6

38.    Li Pei, He Chao-Hui*, Guo Gang, Guo Hong-Xia,Zhang Feng-Qi Zhang Jin-Xin.Heavy Ion and Laser Micro-beam Induced Current Transients in SiGe Hetero-junction Bipolar Transistor. Chin. Phys. Lett, 2017, 34(10): 108501,IF: 1.066, Q2, SCI: WOS:000423242200024, DOI: 10.1088/0256-307X/34/10/108501

39.    Liu, Shuhuan; Du, Xuecheng; Du, Xiaozhi;He Chaohui; Primary investigation the impacts of the external memory (DDR3) failures on the performance of Xilinx Zynq-7010 SoC based system (MicroZed) using laser irradiation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 406: 449-455, SEP 1 2017,IF: 1.255,Q3,SCI: WOS:000407659500010, DOI: 10.1016/j.nimb.2017.04.053

40.    Pei Li, Mo-Han Liu, Chao-Hui He*, Hong-Xia Guo, Jin-Xin Zhang, and Ting Ma. An Investigation of Ionizing Radiation Damage in Different SiGe Processes. Chin. Phys. B, 26(8): 088503-1-6, 2017, IF: 1.469,Q3, SCI: WOS:000407024700003, DOI: 10.1088/1674-1056/26/8/088503

41.    Zhang, Jin-Xin; He, Chao-Hui*; Guo, Hong-Xia; Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor. CHINESE PHYSICS B, 26(8): 088502, AUG 2017, IF: 1.469,Q3, SCI: WOS:000407024700002,DOI: 10.1088/1674-1056/26/8/088502

42.    Zong, Pengfei; Cao, Duanlin; Cheng, Yuan;He Chaohui; Functionally reduced graphene oxide supported iron oxides composites as an adsorbent for the immobilization of uranium ions from aqueous solutions. JOURNAL OF MOLECULAR LIQUIDS, 240: 578-588, AUG 2017, IF: 4.561,Q1, SCI: WOS:000407654700064,DOI: 10.1016/j.molliq.2017.05.101

43.    Bo, Tao; Lan, Jian-Hui; Zhao, Yao-Lin;He Chaohui; First-principles study of water reacting with the (110) surface of uranium mononitride. JOURNAL OF NUCLEAR MATERIALS,492: 244-25, AUG 2017, IF: 2.536, Q1, SCI: WOS:000404701300032, DOI: 10.1016/j.jnucmat.2017.05.026

44.    Pei Li, Chaohui He, Hongxia Guo, Qi Guo, Jinxin Zhang, and Mohan Liu. An Investigation of ELDRS in Different SiGe Processes. IEEE Transactions on Nuclear Science, 2017, 64(5): 1137-1141, IF: 1.455,Q2, SCI: WOS:000401949800005, DOI: 10.1109/TNS.2017.2686429

45.    Xuecheng Du, Shuhuan Liu, Dongyang Luo, Yao Zhang, Xiaozhi Du, Chaohui He, Xiaotang Ren,Weitao Yang, Yuan Yuan. Single event effects sensitivity of low energy proton in Xilinx Zynq-7010 System-on-Chip[J]. Microelectronics Reliability, 2017, 71:65~70 (SCI: ES4OP), IF: 1.447, Q3, SCI: WOS:000399514900009,DOI: 10.1016/j.microrel.2017.02.014

46.    Zong, Pengfei; Cao, Duanlin; Wang, Shoufang; He Chaohui; Synthesis of Fe3O4/CD magnetic nanocomposite via low temperature plasma technique with high enrichment of Ni(II) from aqueous solution. JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS, 70: 134-140, JAN 2017, IF: 3.763,Q1, SCI: WOS:000393002600016, DOI: 10.1016/j.jtice.2016.10.022

47.    Zhao Wen; He Chaohui; Chen Wei; Single Event Effect Characteristics Analysis of Typical Circuit Elements in Spacecraft Power Systems. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON NUCLEAR ENGINEERING, 2017, VOL 7: V007T10A035, SCI: WOS:000426020600035

48.    Wang SanBing; Xie Qilin; He ChaoHui. Application of The Burnable Poison in The Design of Space Nuclear Reactor. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON NUCLEAR ENGINEERING, 2017, VOL 3: UNSP V003T13A006, SCI: WOS:000426020100071

49.    Xuecheng Du, Chaohui He*, Shuhuan Liu, Yao Zhang, Yonghong Li and Weitao Yang. Measurement of single event effects induced by alpha particles in the Xilinx Zynq-7010 System-on-Chip[J], Journal of Nuclear Science and Technology, 2017, 54(3):287~292, IF: 1.246, Q2, SCI: WOS:000394716500003,DOI: 10.1080/00223131.2016.1262294

50.    Liu Shuhuan, Du Xuecheng, Du Xiaozhi, Zhang Yao, Mubashiru Lawal Olarewaju,  Luo Dongyang,   Yuan Yuan,  Deng Tianxiang, Li Zhuoqi, Zang Hang,  Li Yonghong, He Chaohui, Ma Yingqi, Shangguan Shipeng. Primary investigation the impact of external memory(DDR3) failure on the performance of Xilinx Zynq-7010 SoC based system(Microzed) using laser irradiation. Nucl. Instr. And Meth. B, 406 (2017) 449–455,IF: 1.255,Q3.

51.    马婷,张晋新,贺朝会等.不同偏置影响SiGe HBT剂量率效应数值模拟[J].原子能科学技术,201751(3)549-554.

52.    何博文,贺朝会,申帅帅,陈袁妙梁. 质子在氮化镓中产生位移损伤的Geant4模拟,原子能科学技术,201751(3)543-548.

53.    杨卫涛, 贺朝会, 杜雪成,. 片上存储器单粒子翻转效应诊断及修复[J]. 核电子学与探测技术, 2017, 37(2): 138-141

54.    杜雪成, 贺朝会, 刘书焕,李永宏. 28nm Xilinx Zynq-7000系统芯片单粒子效应研究进展[J].现代应用物理,201782):1-6.

55.    Chaohui He*, Xuecheng Du, Shuhuan Liu, Yao Zhang, Yonghong Li, Weitao Yang, et al. Study on Single Event Effects in 28nm System-on-Chip[C]. 2017 International Workshop on Reliability and Radiation Effects of Micro-and Nano-Electronic Devices, 2017.

56.    Weitao Yang, Chaohui He, Xuecheng Du, et al. A SEU Diagnosis and Recovery System for OCM in Xilinx 28-nm System-On-Chip 2017[C]. International Workshop on Reliability and Radiation Effects of Micro-and Nano-Electronic Devices, 2017.

57.    WT. Yang, X. Du, J. Guo, et al. Preliminary SEE Distribution Investigation on 28 nm SoC Using Heavy Ion Microbeam[C]. 23rd International Conference on Ion Beam Analysis. 2017

58.    J.M. Kebwaro, C.H. He, Y.L. Zhao. Reproducibility of (n,c) gamma ray spectrum in Pb under different ENDF/B releases. Nuclear Instruments and Methods in Physics Research B 373 (2016) 1–4. SCI: WOS:000374364900001,DOI: 10.1016/j.nimb.2016.02.028

59.    Li, Kui; Zhao, Yaolin; Zhang, Peng;He Chaohui; Combined DFT and XPS investigation of iodine anions adsorption on the sulfur terminated (001) chalcopyrite surface.  APPLIED SURFACE SCIENCE,390: 412-421, DEC 30 2016, IF:4.281,Q1,SCI: WOS:000385900700052, DOI: 10.1016/j.apsusc.2016.08.095

60.    LI Kui, ZHAO Yao-Lin, DENG Jia, HE Chao-Hui, DING Shu-Jiang, SHI Wei-Qun. Adsorption of Radioiodine on Cu2O Surfaces: a First-Principles Density Functional Study[J]. Acta Phys. -Chim. Sin., 2016,32 (9): 2264-2270. DOI: 10.3866/PKU.WHXB201606141.

61.    唐杜, 贺朝会*, 臧航, 李永宏, 熊涔, 张晋新, 张鹏, 谭鹏康. 硅单粒子位移损伤多尺度模拟研究[J]. 物理学报, 2016, 65(8): 084209. WOS:000380363400024. DOI: 10.7498/aps.65.084209

62.    唐杜,贺朝会,熊涔,张晋新,臧航,李永宏,张鹏,谭鹏康. 超低泄漏电流二极管单粒子位移损伤电流计算[J]. 强激光与粒子束, 2016, 28(02): 28026001.

63.    Du Tang, Ignacio Martin-Bragado, Chaohui He*,Hang Zang, Cen Xiong, Yonghong Li,Daxi Guo, Peng Zhang, Jinxin Zhang. Time dependent modeling of single particle displacement damage in silicon devices. Microelectronics Reliability. Volume 60, May 2016, Pages 2532. WOS:000375516200005. DOI: 10.1016/j.microrel.2016.03.004

64.    Jinxin Zhang, Qi Guo, Hongxia Guo, Wu Lu, Chaohui He*, Xin Wang, Pei Li, and Mohan Liu. Impact of Bias Conditions on Total Ionizing Dose Effects of 60 Co γ in SiGe HBT. IEEE Transactions  on Nuclear  Science, 2016,  63(2): 1251-1258, SCI: WOS: 000375035800021, DOI: 10.1109/TNS.2016.2522158

65.    Guo Daxi, He Chaohui*, Zang Hang, Zhang Peng, Ma Li, Li Tao, Cao Xingqing. Re-evaluation of neutron displacement cross sections for silicon carbide by a Monte Carlo approach, JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2016532):161-172, SCI:WOS:000366209900002.DOI: 10.1080/00223131.2015.1028502

66.    Xuecheng Du, Chaohui He, Shuhuan Liu, Yao Zhang,