论文期刊

An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor With Lanthanum Hexaboride Gate Material




作者: W Wang , Y Wang , M Zhang, R Wang, G Chen, X Chen, F Lin, F Wen, K Jia, H Wang
发表/完成日期: 2020-02-29
期刊名称: IEEE ELECTRON DEVICE LETTERS
期卷: 41(4)
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论文简介
An enhancement-mode hydrogen-terminated diamond field-effect transistor (FET) is realized by using a low work function gate material, namely, lanthanum hexaboride (LaB 6 ). The reason for the enhancement mode should be that the electrons in the LaB 6 layer flow into the two-dimensional hole gas (2DHG) channel and compensate the holes, such that the channel is shut down. The threshold voltages ( VTH ) range from − 0.29 V to − 0.72 V with different gate lengths. The device with 2 μm gate length shows a − 57.9 mA/mm maximum drain current density ( IDSmax ) at VGS=− 5 V. The on/off ratio is around 9 orders of magnitude, with a subthreshold swing of 130 mV. Effective mobility ( μeff ) as high as 195.4 cm 2 / V⋅s is obtained from the device. This technique reveals undamaged 2 DHG characteristics, uncontaminated interface between LaB 6 and aluminum gate metal, and a simple fabrication process, which will promote the development of enhancement diamond FETs.
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