论文期刊

Growth Stress in Bi Thin Films and Self-Formed Nanowires




作者: Ma, F; Ma, B; Xu, KW
发表/完成日期: 2012-01-02
期刊名称: INTEGRATED FERROELECTRICS
期卷: 135
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论文简介
Growth stress can not be avoided in thin films due to atomic peening, grain growth as well as thermal effect. In this work, magnetron sputtering was used to deposit Bismuth (Bi) thin films in an interval process. In-situ stress measurement showed that the growth stress of Bi thin films is compressive and oscillates with time. Microstructural characterizations indicate that the as-deposited Bi thin films are polycrystalline, and there are self-formed Bi nanowires near hillocks on film surface, which can be ascribed to the atomic diffusion through grain boundaries driven by the compressive stress.