论文期刊

Diffusion-controlled formation mechanism of dual-phase structure during Al induced crystallization of SiGe




作者: Zhang, TW; Ma, F; Zhang, WL
发表/完成日期: 2012-02-01
期刊名称: APPLIED PHYSICS LETTERS
期卷: 100 (7)
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论文简介
Aluminum induced crystallization of amorphous SiGe at low temperature is studied and a dual-phase stacked structure with different compositions emerges when the annealing temperature is higher than a critical value. This behavior is very sensitive to the oxidization state of the interlayer. A model based on energetics is proposed to elucidate this temperature dependent behavior. Thermodynamically, it can be ascribed to the competition between grain-boundary-mediated and interface-mediated crystallization and kinetically, it stems from the different diffusion rates of Si and Ge. The results are useful to the design and fabrication of high-efficiency solar cells.