论文期刊

Stress and microstructure evolution in Al-induced crystallization of amorphous Ge thin films




作者: Zhang, WL; Ma, F; Zhang, TW; Xu, KW
发表/完成日期: 2011-11-01
期刊名称: THIN SOLID FILMS
期卷: 520(2)
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论文简介
Stress evolution during Al-induced crystallization of amorphous Ge thin films was in-situ explored by multi-beam optical stress sensor (MOSS). The critical temperature at which crystallization occurs was determined by in-situ X-ray diffraction (XRD) measurement. In combination with microstructure characterization, we try to understand the mechanisms of stress generation as well as stress relaxation during metal induced crystallization (MIC).