论文标题 |
Stress and microstructure evolution in Al-induced crystallization of amorphous Ge thin films |
作者 |
Zhang, WL; Ma, F; Zhang, TW; Xu, KW |
发表/完成日期 |
2011-11-01 |
期刊名称 |
THIN SOLID FILMS |
期卷 |
520(2) |
相关文章 |
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论文简介 |
Stress evolution during Al-induced crystallization of amorphous Ge thin films was in-situ explored by multi-beam optical stress sensor (MOSS). The critical temperature at which crystallization occurs was determined by in-situ X-ray diffraction (XRD) measurement. In combination with microstructure characterization, we try to understand the mechanisms of stress generation as well as stress relaxation during metal induced crystallization (MIC). |