研究领域

★ 流体机械内流理论

★ 压缩机管网系统控制及故障诊断技术

★ 通风机设计与噪声控制

★ 晶体生长及分子动力学研究

★ 高精度谱元方法的研究（Spectral Element Method）

★ 层流边界层的控制技术

研究成果

发表论文

  1. Wensen Ai and Xuejiang Chen, Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage. Journal of Vacuum Science & Technology A. 2023, 41 (4), 042713.
  2. Yuan Li, Xuejiang Chen and Wensen Ai, Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC (0001) growth. Journal of Crystal Growth. 2023, 617, 127291.
  3. Yang Su, Xuejiang Chen, Xin Wang, Xiaodong Li, Xiaoming Liu, Real-time modular dynamic modeling for compression system of altitude ground test facilities. Chinese Journal Of Aeronautics. 2023, 36(5), 202-211.
  4. Qian Xia, Xuejiang Chen and Wensen Ai, Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal. Journal of Crystal Growth. 2023, 612, 127195.
  5. Yang Su, Xuejiang Chen, Xiaoming Liu, Xin Wang, Xiaodong Li, Study of Parallel Compressor System and Real-Time Simulation Based on Modular Dynamic System Greitzer Modeling. Machines. 2023, 11(2), 213.
  6. Xuejiang Chen, Qian Xia, Hao Zhao and Wensen Ai, Effect of Deposition Flux on Polytypic Competitive Growth of SiC Crystal by Kinetic Monte Carlo Method. Physica Status Solidi B-Basic Solid State Physics, 2023, 260(1), 2200307.
  7. Wensen Ai, Xuejiang Chen and Jianmei Feng, Early stage nucleation mechanism for SiC(0001) surface epitaxial growth. Journal of Vacuum Science & Technology A, 2022, 40(3), 033201.
  8. Wensen Ai, Xuejiang Chen and Jianmei Feng, Microscopic origins of anisotropy for the epitaxial growth of 3C-SiC (0001) vicinal surface: A kinetic Monte Carlo study. Journal of Applied Physics, 2022, 131(12), 125304.
  9. Yang Su, Xin Wang, Xuejiang Chen, Wensen Ai, Tongqing Wang, Xiaodong Li, Xiaoming Liu, Dynamic Simulation Method for Air Supply Compressor Unit of Altitude Test Facility. Journal of Propulsion Technology, 2022, 43(10).
  10. Yuan Li, Xuejiang Chen and Wensen Ai, Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces. Computational Materials Science. 2021, 197, 110607.
  11. Xuejiang Chen, Wensen Ai, Hao Zhao, Yuan Li and Jianmei Feng, Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study. Vacuum. 2021, 188, 110189. [ 全文（Full-text） ]
  12. Xuejiang Chen, Hao Zhao and Wensen Ai, Study on the competitive growth mechanism of SiC polytypes using Kinetic Monte Carlo method. Journal of Crystal Growth. 2021, 559, 126042. [ 全文（Full-text） ]
  13. Wensen Ai, Xuejiang Chen, Yuan Li and Hao Zhao, Application of self-consistent rate equations approach for SiC (0001) surface epitaxial growth. Computational Materials Science. 2021, 188, 110253.
  14. 陈雪江，赵岐山，冯健美，一种新型吸油烟机集烟方式的数值研究. 风机技术. 2020, 62(05): 24-31.
  15. Xuejiang Chen and Yuan Li, Stepped morphology on vicinal 3C-and 4H-SiC (0001) faces: A kinetic Monte Carlo study. Surface Science. 2019, 681: 18-23. [ 全文（Full-text） ]
  16. Xuejiang Chen, Juan Su and Yuan Li, Application of a niching genetic algorithm to the optimization of a SiC crystal growth system. Journal of Materials Science: Materials in Electronics. 2017, 28: 269-275. [ 全文（Full-text） ]
  17. Juan Su, Xuejiang Chen, Yuan Li, Michel Pons and Elisabeth Blanquet, A niching genetic algorithm applied to optimize a SiC-bulk crystal growth system. Journal of Crystal Growth. 2017,468: 914-918.
  18. Yuan Li, Xuejiang Chen and Juan Su, Effect of nucleation on instability of step meandering during step-flow growth on vicinal 3C-SiC (0001) surfaces. Journal of Crystal Growth. 2017, 468: 28-31.
  19. Yuan Li, Xuejiang Chen and Juan Su, Study on formation of step bunching on 6H-SiC(0001) surface by kinetic Monte Carlo method. Applied Surface Science. 2016,371:242-247.
  20. 赵平崇，石利德，王炯，陈雪江，烧结机尾除尘风机性能偏差原因分析及改进. 风机技术. 2016,58(2):87-90
  21. 艾文森，陈雪江，叶片进口安装角对多翼离心风机噪声的影响. 风机技术. 2016,58(2):37-41
  22. 谭长有，陈雪江，多工况、宽工况离心压缩机的气动方案设计. 风机技术. 2015,57(5):31-35
  23. J. Su, X.J. Chen, and Y. Li, Numerical design of induction heating in the PVT growth of SiC crystal. Journal of Crystal Growth. 2014,401(11):128-132
  24. X.J. Chen, T.Y. Cao, J. Su and G.L. Qin, Experimental and numerical analysis on noise reduction in a multi-blade centrifugal fan, IOP Conf. Series: Materials Science and Engineering 52 (2013) 022046
  25. S. Nakano, X.J. Chen, B. Gao and K. Kakimoto, Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells . Journal of Crystal Growth. 2011, 318: 280-282. [ 全文（Full-text） ]
  26. X.J. Chen, S. Nakano and K. Kakimoto, 3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells. Journal of Crystal Growth. 2011, 318: 259-264. [ 全文（Full-text） ]
  27. X.J. Chen, S. Nakano and K. Kakimoto, Three-dimensional global analysis of thermal stress and dislocations in a silicon ingot during a unidirectional solidification process with a square crucible. Journal of Crystal Growth. 2010, 312: 3261-3266. [ 全文（Full-text） ]
  28. B. Gao, X.J. Chen, S. Nakano, S. Nishizawa and K. Kakimoto, Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation. Journal of Crystal Growth. 2010, 312: 3349-3355. [ 全文（Full-text） ]
  29. X.J. Chen, S. Nishizawa and K. Kakimoto, Numerical simulation of a new SiC growth system by the dual-directional sublimation method. Journal of Crystal Growth. 2010, 312: 1697-1702. [ 全文（Full-text） ]
  30. B. Gao, X.J. Chen, S. Nakano and K. Kakimoto, Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells. Journal of Crystal Growth. 2010, 312: 1572-1576. [ 全文（Full-text） ]
  31. K. Kakimoto, H. Matsuo, S. Hisamatsu, B. Ganesh, B. Gao, X.J. Chen, L.J. Liu, H. Miyazawa and Y. Kangawa , Numerical analysis of mc-Si crystal growth. Solid State Phenomena. 2010, 156-158: 193-198. [ 全文（Full-text） ]
  32. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations. Journal of Crystal Growth. 2010, 312: 192-197. [ 全文（Full-text） ]
  33. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Simulation analysis of point defects in a silicon ingot during a unidirectional solidification process for solar cells. ECS Transactions. 2009, 18(1): 1031-1035. [ 全文（Full-text） ]
  34. K. Kakimoto, X.J. Chen, L.J. Liu, H. Miyazawa, H. Matsuo, S. Nakano, S. Hisamatsu and Y. Kangawa, Heat and Impurity Transfer Mechanisms of Czochralski and Directional Solidification Processes. ECS Transactions. 2009, 18(1): 925-933. [ 全文（Full-text） ]
  35. S. Nakano, L.J. Liu, X.J. Chen, H. Matsuo and K. Kakimoto, Effect of crucible rotation on oxygen concentration in the polycrystalline silicon grown by the unidirectional solidification method. Journal of Crystal Growth. 2009, 311: 1051-1055. [ 全文（Full-text） ]
  36. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Numerical investigation of thermal stress and dislocation density in silicon ingot during a solidification process. Reports of Research Institute for Applied Mechanics, Kyushu University. 2008, 135: 45-52.
  37. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Study on thermal stress in a silicon ingot during a unidirectional solidification process. Journal of Crystal Growth. 2008, 310: 4330-4335. [ 全文（Full-text） ]
  38. X.J. Chen, L.J. Liu, H. Tezuka, Y. Usuki and K. Kakimoto, Optimization design of the crucible for a SiC sublimation growth system using a global simulation model. Journal of Crystal Growth. 2008, 310(7-9), 1810-1814. [ 全文（Full-text） ]
  39. K. Kakimoto, L. Liu, H. Miyazawa, S. Nakano, D. Kashiwagi, X.J. Chen and Y. Kangawa,  Numerical investigation of crystal growth process of bulk Si and nitrides-a review. Crystal Research and Technology. 2007, 42(12): 1185-1189. [ 全文（Full-text） ]
  40. X.J. Chen, L.J. Liu, H. Tezuka, Y. Usuki and K. Kakimoto, Numerical investigation of induction heating and heat transfer in a SiC growth system. Crystal Research and Technology. 2007, 42(10): 971-975. [ 全文（Full-text） ]
  41. X.J. Chen, K. Kim and H.J. Sung, Effect of local blowing from a slot on a laminar boundary layer. Fluid Dynamics Research. 2006, 38: 539-549. [ 全文（Full-text） ]
  42. 陈雪江，秦国良，基于Internet的风机网上选型系统的设计与实现. 计算机工程与设计. 2004, 25(7): 1173-1175.
  43. 陈雪江，秦国良，武珑，徐忠，谱元方法求解环形空间内自然对流换热. 应用力学学报. 2004, 21(3): 121-124.
  44. 秦国良，陈雪江，武珑，徐忠，极坐标系下谱元方法求解不可压缩Navier-Stokes方程. 空气动力学学报. 2004, 2(2): 216-219.
  45. 陈雪江，秦国良，徐忠，等参谱元方法的研究. 数值计算与计算机应用. 2003, 24(3): 201-206;
  46. X.J. Chen, G.L. Qin and Z. Xu, Research of an isoparametric spectral element method. Chinese Journal of Numerical Mathematics and Applications (in English), 2003, 25(4):87-94.
  47. 陈雪江，秦国良，离心通风机选型系统的网络共享. 风机技术. 2003, 4: 29-31.
  48. 陈雪江，秦国良，徐忠，谱元法和高阶时间分裂法求解方腔顶盖驱动流. 计算力学学报. 2002, 19(3): 281-285.

 

学术会议

  1. Xuejiang Chen, Yue Liu, Juan Su and Yuan Li, Effects of properties of SiC powder source on growth of SiC crystal by PVT. The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Aug. 07-12, 2016, Nagoya, Japan.
  2. Juan Su, Xuejiang Chen, Yuan Li, Michel Pons, Elisabeth Blanquet, A niching genetic algorithm applied to optimize a SiC-bulk crystal growth system. The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Aug. 07-12, 2016, Nagoya, Japan.
  3. Yuan Li, Xuejiang Chen, Juan Su, Instability of step meandering caused by nucleation during step-flow growth on vicinal 3C-SiC (0001) surfaces. The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Aug. 07-12, 2016, Nagoya, Japan.
  4. 赵平崇，石利德，王炯，陈雪江，烧结机尾除尘风机性能偏差原因分析及改进. 第二届中国国际风机学术会议，2015.09.14-09.17，成都，中国.
  5. 艾文森，陈雪江，叶片进口安装角对多翼离心风机噪声的影响. 第二届中国国际风机学术会议，2015.09.14-09.17，成都，中国.
  6. X.J. Chen, T.Y. Cao, J. Su and G.L. Qin, Experimental and numerical analysis on noise reduction in a multi-blade centrifugal fan (ICPF2003), Sep. 19-22, 2013, Beijing, China.
  7. J. Su, X.J. Chen, and Y. Li, Numerical design of induction heating in the PVT growth of SiC crystal. The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Aug. 11-16, 2013, Warsaw, Poland.
  8. Y. Li, X.J. Chen, and J. Su, Numerical analysis of multi-phase flow in the sublimation growth of SiC crystal by a 2-D incompressible kinetic model. The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Aug. 11-16, 2013, Warsaw, Poland.
  9. 曹廷云，陈雪江，秦国良，多翼离心风机噪声分析的试验及数值研究. 2013年中国风机技术学术会议，2013.05.30-06.01， 烟台.
  10. X.J. Chen, S. Nakano and K. Kakimoto, 3D numerical analysis of crucible effects on stress and dislocation in a silicon ingot during a unidirectional solidification process. The 16th International Conference on Crystal Growth (ICCG-16), Aug. 8-13, 2010, Beijing, China.
  11. S. Nakano, X.J. Chen, B. Gao and K. Kakimoto, Numerical analysis of cooling rate dependence to dislocation density in multicrystalline silicon for solar cells. The 16th International Conference on Crystal Growth (ICCG-16), Aug. 8-13, 2010, Beijing, China.
  12. B. Gao, X.J. Chen, S. Nakano and K. Kakimoto, A proposal of crystal growth method of high-purity multi-crystalline silicon in a unidirectional solidification furnace. The 16th International Conference on Crystal Growth (ICCG-16), Aug. 8-13, 2010, Beijing, China.
  13. B. Gao, X.J. Chen, S. Nakano, S. Nishizawa and K. Kakimoto, Analysis of SiC single crystal sublimation growth by fully coupled compressible multi-phase flow simulation. The 16th International Conference on Crystal Growth (ICCG-16), Aug. 8-13, 2010, Beijing, China.
  14. K. Kakimoto, L.J. Liu, X.J. Chen, H. Matsuo, H. Miyazawa, S. Hisamatsu, S. Nakano and Y. Kangawa, Numerical investigation of heat and mass transfer during a unidirectional solidification process in crystalline silicon for solar cells. 216th ECS Meeting, 4-9 October, 2009, Vienna, Austria.
  15. K. Kakimoto, S. Hisamatsu, X.J. Chen, H. Matsuo, H. Miyazawa, S. Nakano, L.J. Liu and Y. Kangawa, Numerical investigation of heat and mass transfer during a unidirectional solidification process in crystalline silicon for solar cells. 17th American Conference on Crystal Growth and Epitaxy. (ACCG-17), 9-14, August, 2009, Lake Geneva, Wisconsin, US.
  16. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Simulation for point defects in unidirectional solidified single silicon for solar cells. 3rd International Workshop on Crystalline Silicon Solar Cells (CSSC-3), 3-5, June, 2009, Trondheim, Norway.
  17. K. Kakimoto, H. Matsuo, X.J. Chen, S. Hisamatsu, B. Gao, L.J. Liu and S. Nakano, Numerical investigation of solidification process of multi-crystalline silicon grown by directional solidification method. 3rd International Workshop on Crystalline Silicon Solar Cells (CSSC-3), 3-5, June, 2009, Trondheim, Norway.
  18. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Simulation analysis of point defects in silicon ingot during unidirectional solidification process for solar cells. 7th ISTC/CISTC 2009 Meeting, 19-20, March, 2009, Shanghai, China.
  19. K. Kakimoto, X.J. Chen, L.J. Liu, H. Miyazawa, H. Matsuo, S. Nakano, S. Hisamatsu and Y. Kangawa, Heat and Impurity Transfer Mechanisms of Czochralski and Directional Solidification Processes. 7th ISTC/CISTC 2009 Meeting, 19-20, March, 2009, Shanghai, China.
  20. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Numerical analysis of dislocation density and residual stress in silicon ingot during a unidirectional solidification process. The 5th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium), 10-14, November, 2008, Kona, Hawaii, USA. Presentation No: E15. Proceedings, p124-128.
  21. S. Nakano, L.J. Liu, X.J. Chen, H. Matsuo and K. Kakimoto, Effects of crucible rotation on oxygen concentration in the melt during crystallization of silicon for solar cell. The 5th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium), 10-14, November, 2008, Kona, Hawaii, USA. Presentation No: E16. Proceedings, p129-133.
  22. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Dislocation density in silicon ingot during a unidirectional solidification process. XXI Congress of the International Union of Crystallography (IUCr2008), 23-31, August, 2008, Osaka, Japan. (invited)
  23. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Study on thermal stresses and dislocation in silicon ingot during a unidirectional solidification process. International Conference on Nonlinear Problems in Aviation and Aerospace (ICNPAA) 2008, 25-27, June, 2008, Genoa, Italy.
  24. S. Nakano, L.J. Liu, X.J. Chen, H. Miyazawa, Y. Kangawa and K. Kakimoto, Analysis of carbon distribution and SiC precipitation using unidirectional-solidification process for multi-crystalline silicon. 17th International Photovoltaic Science and Engineering Conference (PVSEC-17), 3-7, December, 2007, Fukuoka, Japan.
  25. X.J. Chen, L.J. Liu, H. Tezuka, Y. Usuki and K. Kakimoto, Numerical simulation of heat transfer in an inductively heated SiC growth system using a global model. The 15th International Conference on Crystal Growth (ICCG-15), Aug. 12-17, 2007, Salt Lake City, Utah, US.
  26. L.J. Liu, X.J. Chen, S. Nakano and K. Kakimoto, Investigation of a unidirectional solidification process for Si crystals with a transient global model. 1st International Workshop on Science and Technology of Crystalline Silicon Solar Cells (CSSC-1), 2-3, October, 2006, Sendai, Japan.
  27. X.J. Chen, B. Gao, S. Nakano, S. Nishizawa and K. Kakimoto, Investigation of a SiC dual-directional sublimation method (D2S Method) by global simulation model. The 57th Spring Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), March 17 - 20, 2010, Kanagawa, Japan.
  28. S. Nakano, X.J. Chen, B. Gao and K. Kakimoto, Numerical analysis of dislocation density in multi-crystalline silicon for solar cells during cooling process. The 57th Spring Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), March 17 - 20, 2010, Kanagawa, Japan.
  29. B. Gao, X.J. Chen, S. Nakano and K. Kakimoto, Crystal growth of high-purity multi-crystalline silicon using a unidirectional solidification furnace for solar cells. The 57th Spring Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), March 17 - 20, 2010, Kanagawa, Japan.
  30. B. Gao, X.J. Chen, S. Nakano, S. Nishizawa and K. Kakimoto, Coupled full compressible multi-phase flow simulation of SiC sublimation growth. The 57th Spring Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), March 17 - 20, 2010, Kanagawa, Japan.
  31. X.J. Chen, S. Nakano and K. Kakimoto, Simulation for dislocations in multicrystalline silicon and point defects in single crystal silicon grown by unidirectional solidification method. The 19th Forum on Lattice Defects, September 24, 2009, Kasuga-shi, Fukuoka, Japan.
  32. S. Hisamatsu, B. Gao, X.J. Chen, S. Nakano, Y. Kangawa and K. Kakimoto, Analysis of distributions of light elements in multicrystalline silicon for solar cell by considering gas reaction in furnace. The 118th Workshop, 145 Committee of Japan Society for the Promotion of Science (JSPS), July 30-31, 2009, Kasuga-shi, Fukuoka, Japan.
  33. X.J. Chen, S. Nakano and K. Kakimoto, 3D analysis of thermal stresses and dislocations in a silicon ingot of a unidirectional solidification process with a square crucible. The 70th Autumn Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), September 8-11, 2009, Toyama-shi, Toyama, Japan.
  34. S. Nakano, X.J. Chen, B. Gao, and K. Kakimoto, Influence of growth rate and size of furnace on melt-solid interface shape during crystallization of silicon for solar cell. The 70th Autumn Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), September 8-11, 2009, Toyama-shi, Toyama, Japan.
  35. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Evaluation of point defects in a silicon ingot of unidirectional solidification process with a simulation model. The 56th Spring Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), March 30 - April 2, 2009, Tsukuba, Ibaraki, Japan.
  36. K. Kakimoto, X.J. Chen, H. Matsuo, S. Hisamatsu, S. Nakano and Y. Kangawa, Dynamic simulation of crystal growth of silicon for solar cells and LSIs. The 56th Spring Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), March 30 - April 2, 2009, Tsukuba, Ibaraki, Japan.
  37. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Numerical investigation of dislocation density in silicon ingot during solidification process of multicrystalline silicon. The 38th National Conference on Crystal Growth (NCCG-38), November 4-6, 2008, Sendai, Japan.
  38. S. Nakano, L.J. Liu, X.J. Chen, H. Matsuo and K. Kakimoto, Numerical analysis of crucible rotation dependence to oxygen concentration in the melt during crystallization of silicon for solar cell. The 38th National Conference on Crystal Growth (NCCG-38), November 4-6, 2008, Sendai, Japan.
  39. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Dislocation density evaluation in a silicon ingot during unidirectional solidification process with a simulation model. The 69th Autumn Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), September 2-5, 2008, Aichi, Japan.
  40. S. Nakano, L.J. Liu, X.J. Chen, Y. Kangawa and K. Kakimoto, Influence of crucible rotation on oxygen incorporation into the grown multicrystalline silicon for solar cell – a theoretical approach. The 69th Autumn Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), September 2-5, 2008, Aichi, Japan.
  41. X.J. Chen, S. Nakano, L.J. Liu and K. Kakimoto, Analysis of thermal stresses distribution in a silicon ingot of a casting process with a simulation model. The 55th Spring Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), March 27-30, 2008, Chiba, Japan.
  42. S. Nakano, L.J. Liu, X.J. Chen, H. Miyazawa and K. Kakimoto, Analysis of carbon distribution and SiC precipitation using unidirectional-solidification process for multi-crystalline silicon. The 55th Spring Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), March 27-30, 2008, Chiba, Japan.
  43. X.J. Chen, L.J. Liu, H. Tezuka, Y. Usuki and K. Kakimoto, Simulation for growth rate and thermal stress of AlN crystal by sublimation method. The 68th Autumn Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), September 4-8, 2007, Sapporo, Hokkaido, Japan.
  44. X.J. Chen, L.J. Liu, H. Tezuka, Y. Usuki and K. Kakimoto, Simulation for growth rate and thermal stress of SiC crystal by sublimation method. The 68th Autumn Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), September 4-8, 2007, Sapporo, Hokkaido, Japan.
  45. X.J. Chen, L.J. Liu, H. Tezuka, Y. Usuki and K. Kakimoto, Numerical investigation of induction heating and heat transfer on a SiC growth system. Kyushu University RIAM Forum 2007. 2007: 59-62
  46. X.J. Chen, L.J. Liu, H. Tezuka, Y. Usuki and K. Kakimoto, Simulation for heat generation and temperature distribution in a SiC growth system. The 54th Spring Meeting, the Japan Society of Applied Physics and Related Societies (JSAP), March 27-30, 2007, Kanagawa, Japan.
  47. L.J. Liu, D. Yoneda, N. Takahashi, S. Nakano, X.J. Chen and K. Kakimoto, Three-dimensional global analysis of heat transfer in a unidirectional solidification process for silicon solar cells. The 36th National Conference on Crystal Growth (NCCG-36), November. 1-3, 2006, Osaka, Japan; Journal of the Japanese Association for Crystal Growth, 2006, 33(4): p.180, Paper No: 01aA04.