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论文期刊

论文标题    Influence of Oxidation Treatment on Ballistic Electron Surface-emitting Display of Porous Silicon
作者    Wentao Du, Xiaoning Zhang, Yujuan Zhang, W J Wang
发表/完成日期    2012-07-12
期刊名称    Thin Solid Films
期卷    2011, in press
相关文章   
论文简介    Two groups of porous silicon (PS) samples are treated by rapid thermal oxidation (RTO) and electrochemical oxidation (ECO), respectively. Scanning electron microscopy images show that PS samples are segmented into two layers. Oxidized film layer is formed on the top surface of PS samples treated by RTO while at the bottom of PS samples treated by ECO. Both ECO and RTO treatment can make emission current density, diode current density, and emission efficiency of PS increase with the bias voltage increasing. The emission current density and the field emission enhancement factor β of PS sample treated by RTO are larger than that treated by ECO. The Fowler-Nordheim curves of RTO and ECO samples are linear which indicates that high electric field exists on the oxidized layer and field emission occurs whether PS is treated by RTO or ECO.
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