| Paper Name |
The growth behavior of graphene on iron-trichloride-solution-soaked copper substrates in a low pressure chemical vapor deposition |
| Author |
Quanfu Li,Weihua Liu,Tuo Qu, Juan Zhang,Xin Li,Qikun Wang , Xiaoli Wang |
| Publication/Completion Time |
2015-01-04 |
| Magazine Name |
RSC Advances (SCI) |
| Vol |
|
| Related articles |
|
| Paper description |
A copper substrate soaking-treatment with FeCl3 solution is introduced to significantly reduce the initial nucleation density of graphene (up to 6-fold from 0.29 to 0.05 μm−2), and the overall graphene coverage increase-rate is successfully increased. The reduction in nucleation density is attributed to the oxidization of copper by treatment with the FeCl3 solution according to the X-ray photoelectron spectroscopy results. The soaking-treatment results in a rougher surface and consequently significant surface morphology rebuilding during the chemical vapor deposition. Pretreatment of copper substrate by soaking in FeCl3 solution is a simple and economical approach to control graphene growth. Most importantly, the technique is compatible with the common patterning technique of graphene. |
(创新港)
