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Synergistic Effects of Total Dose Gamma-Ray Radiation and High-Temperature Reverse Bias Stress on the Performance of SiC MOSFETs
发布时间：2026-07-09
- 论文名称：
- Synergistic Effects of Total Dose Gamma-Ray Radiation and High-Temperature Reverse Bias Stress on the Performance of SiC MOSFETs
- 发表刊物：
- Chinese Physics B
- 合写作者：
- K. Yang, Y. Cao, C. Chen, H. Cao, L. Zhou, L. Geng, W. Liu, G. Xu, S. Long,C. Han*
- 第一作者：
- S. Zhong
- 论文类型：
- 期刊论文
- 是否译文：
- 否
- 发表时间：
- 2026-01-01
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