Effective Zeeman splitting in bent lateral heterojunctions of graphene and hexagonal boron nitride: A new mechanism towards half-metallicity
发布时间:2025-04-30
点击次数:
- 发布时间:
- 2025-04-30
- 论文名称:
- Effective Zeeman splitting in bent lateral heterojunctions of graphene and hexagonal boron nitride: A new mechanism towards half-metallicity
- 发表刊物:
- Physical Review B
- 摘要:
- Low-dimensional half-metallic (HM) systems are invaluable for future spintronics.Yet a definitive experimental demonstration of HM characteristic in two-dimensional (2D) materials remains elusive. Here, we reveal that in recently synthesized graphene/hexagonal boron nitride (G/hBN) lateral heterojunctions, pronounced HM can be achieved by applying an in-plane bending. We demonstrate with generalized Bloch theorem that bending has strong influence on interfacial spin states, mimicking the Zeeman effect, which consequently leads to the desired HM phase with a sizable HM gap and excellent magnetic stability. Given recent experimental advances in fabrication of G/hBN heterostructures, this strain-driven HM phase may be practically accessible. The generalized Bloch theorem coupled with self-consistent charge density-functional tight binding is useful to model 2D structures under fundamental deformations, thus may boost the study of strain tunable electronic property of low-dimensional materials with inhomogeneous strain patterns.
- 合写作者:
- Yue, L.; Seifert, G.; Chang, K.; Zhang, D.-B.
- 卷号:
- 96(20)
- 页面范围:
- 201403
- 是否译文:
- 否
- 发表时间:
- 2017-11-06
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