Congratulations to Junsheng Huang for his paper published in Physical Review Applied! - 首页
Congratulations to Junsheng Huang for his paper published in Physical Review Applied!
Promising properties of a sub-5-nm monolayer MoSi2N4 transistor
See: https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.16.044022
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