论文成果

发布时间：

2026-08-20

论文名称：

Doping-induced g-C3N4-based S-scheme homojunction with boosted interface/bulk carrier separation for efficient photocatalytic H2 evolution and CO2 reduction

发表刊物：

Fuel

摘要：

Homojunction engineering in graphitic carbon nitride (g-C3N4) presents a viable approach to boost interface/bulk charge carrier separation for enhanced photocatalytic efficiency. Herein, an effective S-scheme homojunction (NA-DCN/NA-SCN) was constructed by compositing N-deficient g-C3N4 (NA-DCN) with S-doped g-C3N4 (NA-SCN) to mediate the interface/bulk carrier separation dynamic in g-C3N4. Structural characterizations and density functional theory (DFT) calculations confirmed the formation of S-scheme homojunction and strong interfacial electronic interactions between NA-DCN and NA-SCN. Photoluminescence and photoelectrochemical measurements demonstrated efficient directional interfacial charge transfer in NA-DCN/NA-SCN, with electrons migrating from NA-DCN and holes from NA-SCN, consistent with the S-scheme mechanism. Meanwhile, bulk separation of photogenerated carriers in NA-DCN and NA-SCN components of NA-DCN/NA-SCN was effectively promoted by N-defect engineering and S doping, respectively. Furthermore, NA-DCN/NA-SCN held the formation of mesoporous nanosheets with a high specific surface area (118.3 m2 g-1), facilitating interface/bulk carrier transfer as well as providing abundant surface-active sites. As a result, the optimized NA-DCN/NA-SCN with S-scheme homojunction exhibited exceptional photocatalytic H2-evolution activity (7607.4 μmol h-1 g-1) with a high apparent quantum yield (9.3% at 420 nm), and an excellent photocatalytic CO2-reduction performance for CO and CH4 production with CH4 electron conversion selectivity of 95.8% in pure water. This study highlights a feasible doping-coupled interfacial homojunction design strategy for regulating photogenerated carrier interface/bulk kinetics in g-C3N4, while offering promising guidelines for developing efficient g-C3N4-based photocatalytic systems.

通讯作者：

Samuel Guemou, Fazal E Haq, Yazhou Zhang,* Binjiang Zhai, Wei Liu, Huaiwu Peng, Kang Chen,* Maochang Liu, Jinwen Shi*

卷号：

429

页面范围：

141039

是否译文：

否

发表时间：

2026-08-22