论文期刊

论文标题    Compton Scattering Pinhole Imaging Technology for Measuring and Diagnosing Dose Field Intensity Distribution of Intense Pulse Gamma Ray Beams
作者    Zheng Xiaohai; Hu Huasi; Sun Jianfeng; Li Zhongliang; Cai Dan; Wang Jinhua
发表/完成日期    2019-05-29
期刊名称    Publisher: IEEE
期卷    2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)
相关文章    09205167_Compton Scattering Pinhole Imaging Technology for Measuring and Diagnosing Dose Field Intensity Distribution of Intense Pulse Gamma Ray Beams.pdf   
论文简介    1.Shaanxi Engineering Research Center of Controllable Neutron Source, School of Sciences, Xijing University, Xi'an 710123, China. 2.College of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China. 3.State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute of Nuclear Technology), Xi’an, 710024, China. Abstract—In the intense pulsed gamma radiation environment (dose rate>1GGy (SI)/s, FWHM10-20ns), the damage of electronic devices and systems exhibits a strong dose rate effect. The dose field distribution of the intense pulse gamma-ray beam generated by the "Qiang guang 1"accelerator is an urgent problem to be solved. It is the premise of carrying out the experiment of high dose rate effect to obtain the distribution information of strong dose field accurately and quickly. In this paper, we present a method for the problem based on the Compton scattering method: placing a target near the exit and using a pinhole imaging system, the scattered gamma intensity distribution at the thin target is reconstructed, and then the intensity distribution of the dose field of the strong pulsed gamma ray beam at the thin target is given. Key words—Qiang guang 1; dose rate effect; pulse radiation; transfer matrix; reconstruction Published in: 2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Date of Conference: 29-31 May 2019 Date Added to IEEE Xplore: 24 September 2020 ISBN Information: INSPEC Accession Number: 20005125 Publisher: IEEE Conference Location: Chongqing, China DOI: 10.1109/ICREED49760.2019.9205167