论文与专利 - 胡 文波
| 出版物 | 作者 | 出版日期 | 出版社 |
|---|---|---|---|
| GB/T 22181-24-2016 等离子体显示器件 第2-4部分 数字电视机用器件特性测量方法 | 邓新群，胡文波，王平松，赵晓东，王丽雯，黄长戈，唐礼，黄卫东 | 2016-11-01 | 中国标准出版社 |
| GB/T 22181-6-2015 等离子体显示器件 第6部分: 数字电视机用等离子体显示器件空白详细规范 | 邓新群，胡文波，王平松，赵晓东，王丽雯，黄长戈，唐礼 | 2016-11-01 | 中国标准出版社 |
| GB/T 22181.5-2015 等离子体显示器件 第5部分：总规范 | 邓新群，胡文波，王平松，赵晓东，王丽雯，黄长戈，唐礼 | 2015-06-02 | 中国标准出版社 |
| SJ/T 11378-61-2015 等离子体显示器件 第6-1部分：数字电视机用彩色等离子体显示器件详细规范 | 王平松、胡文波、唐礼、邓新群、蒋孝荣、宋国武、王文东、高宏伟、邢晓玲 | 2015-04-01 | 中国标准出版社 |
| SJ/T 11378.7-2015 等离子体显示器件 第7部分：数字电视机用等离子体显示器件可靠性试验方法 | 王平松、胡文波、唐礼、邓新群、蒋孝荣、宋国武、王文东、高宏伟、邢晓玲 | 2015-04-01 | 中国标准出版社 |
| GB/T 22181.1-2008 等离子体显示器件 第1部分：术语与文字符号 | 胡文波，刘纯亮，王幼林 | 2008-09-01 | 中国标准出版社 |
| 平板显示技术 | 应根裕，胡文波，邱勇 等 | 2002-11-01 | 人民邮电出版社 |
| 论文标题 | 作者 | 发表/完成日期 | 期刊名称 |
|---|---|---|---|
| Structural changes during femtosecond laser percussion drilling of high-aspect-ratio diamond microholes | TL Shen, T Chen, JH Si, B Gao, WB Hu*, HX Wang, X Hou | 2022-02-21 | Optical Engineering |
| The effect of both Pt decoration and the defects on the adsorption of graphene for SO2 | YF Qu, JJ Ding, HX Chen, WB Hu, HQ Fan | 2022-02-07 | International Journal of Quantum Chemistry |
| Effects of surface activation time on Si-Si direct wafer bonding at room temperature | S Yang, YF Qu, NK Deng, K Wang, S He, Y Yuan, WB Hu*, SL Wu, HX Wang | 2021-08-21 | Materials Research Express |
| Numerical simulation of outgassing characteristics of microchannel plate glass | Z Yao, Y Pang, Y Yuan, WB Hu*, RA Bu, HQ Fan | 2021-04-01 | AIP advances |
| Investigation of atomic diffusion behavior of Mo/Au interface | Kang Wang, Haiyang Bai, Wenbo Hu*, Shengli Wu, Hongxing Wang, Huiqing Fan | 2020-09-15 | Materials Chemistry and Physics |
| Secondary electron emission performance of the surface Ni-doped MgO-Au thin film under continuous electron bombardment | Biye Liu, Jie Li, Shengli Wu, Wenbo Hu, Mingxin Zhang, Kongting Wei | 2020-08-06 | Materials Letters |
| Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing | Yan Pang, Wei Zhao,Jie Li,Yuan Yuan,Wenbo Hu*,Shengli Wu,Yongdong Li | 2020-04-22 | Materials Research |
| Investigation on the bonding quality of GaN and Si wafers bonded with Mo/Au nano-layer in atmospheric air | Kang Wang, Kun Ruan, Haiyang Bai, Wenbo Hu*, Shengli Wu, Hongxing Wang | 2020-04-01 | Materials Science in Semiconductor Processing |
| Secondary electron emission properties of double-layer B-doped diamond films | KT Wei,RZ Wang,J Li,BY Liu,Q Wei,RR Wu,SL Wu, WB Hu,HX Wang | 2020-03-31 | Diamond & Related Materials |
| Effect of hydrogen plasma treatment on secondary electron emission properties of polycrystalline diamond films | K.T. Wei,J. Li,B.Y. Liu,R.R. Wu,Q. Wei,S.L. Wu,W.B. Hu,H.X. Wang | 2020-02-01 | Vacuum |
| Effect of hydrogen plasma treatment on secondary electron emission properties of polycrystalline diamond films | KT Wei, J Li, BY Liu, RR Wu, Q Wei, SL Wu, WB Hu, HX Wang | 2020-02-01 | Vacuum |
| 气体在玻璃中渗透的数值模拟 | 程宏昌，程耀进，庞妍，胡文波*，卜忍安，樊慧庆 | 2020-01-01 | 西安交通大学学报 |
| Substrate Temperature Dependent Microstructure and Electron-Induced Secondary Electron Emission Properties of Magnetron Sputter-Deposited Amorphous Carbon Films | Jie Li, Xingkang Yi, Wenbo Hu*, Buyu Gao, Yongdong Li, Shengli Wu, Shu Lin and J | 2019-12-01 | Materials |
| Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices | Kang Wang, Kun Ruan, Wenbo Hu*, Shengli Wu, Hongxing Wang | 2019-08-24 | Scripta Materialia |
| Room temperature bonding of Si and Si wafers by using Mo/Au nano-adhesion layers | Kang Wang, Kun Ruan, Wenbo Hu*, Shengli Wu, Hongxing Wang | 2019-05-27 | Microelectronic Engineering |
| Room temperature bonding of GaN on diamond by using Mo/Au nano-adhesion layer | Kang Wang, Kun Ruan, Wen-Bo Hu*, Sheng-Li Wu, and Hong-Xing Wang | 2019-05-21 | International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) |
| Secondary electron emission enhancement of MgO/Au composite film by adopting a gold buffer layer | Jie Li, Wenbo Hu*, Ling Hao, Buyu Gao, Shengli Wu, Jintao Zhang, Yongdong Li | 2019-05-19 | Materials Research Bulletin |
| Secondary electron emission of (Mg-Zn-O)-(MgO-Au) bilayer composite film deposited by sputtering | Jie Li, Wenbo Hu*, Qiang Wei, Shengli Wu, Yongdong Li, Huiqing Fan | 2019-04-28 | International Vacuum Electronics Conference |
| Analysis of secondary electron emission properties of MgO/Au composite film with an Al-doped MgO surface layer | Buyu Gao, Jie Li, Wenbo Hu*, Ling Hao, Shengli Wu, Yongdong Li, and Huiqing Fan | 2018-11-28 | AIP Advances |
| Au-doping effect on the secondary electron emission performance of MgO films | Jie Li , Wenbo Hu * , Kang Wang , Buyu Gao , Yongdong Li , Shengli Wu , Jintao Z | 2018-11-01 | Materials |
| 专利名称 | 申请号 | 专利类型 | 申请日期 |
|---|---|---|---|
| 一种金刚石基氮化镓复合晶片及其键合制备方法 | 2020105866928 | 发明 | 2020.07.01 |
| 一种降低铝基材料二次电子发射系数的表面处理方法 | 202010214903.5 | 发明 | 2020.03.24 |
| 一种用于电子倍增器快速精确装配的工装及装配方法 | 2019110633056 | 发明 | 2019.10.31 |
| 一种表面活化过程中高速氩原子束获得装置及获得方法 | 2019108126547 | 发明 | 2019.08.30 |
| 一种用于抑制二次电子发射的碳基薄膜及其制备方法 | 2019106220050 | 发明 | 2019.07.10 |
| 一种金刚石输能窗及其制备方法 | 2019105449861 | 发明 | 2019.06.21 |
| 一种金刚石基氮化镓高电子迁移率晶体管异质集成方法 | 2019102225727 | 发明 | 2019.03.22 |
| 一种电子倍增器的结构及组装方法 | 2018110459572 | 发明 | 2018.09.07 |
| 用于氮化镓和金刚石直接键合的生产设备 | 201821062676.3 | 实用新型 | 2018.08.01 |
| 一种氮化镓/金刚石的直接键合方法 | 201810732475.8 | 发明 | 2018.08.01 |
| 金属与氧化锌掺杂氧化镁二次电子发射薄膜及其制备方法 | 2018101835124 | 发明 | 2018.03.06 |
| 一种氧化镁金属陶瓷二次电子发射薄膜及其制备方法 | 2017112404156 | 发明 | 2017.11.30 |
| 掺杂金属和氧化铝的氧化镁二次电子发射薄膜及其制备方法 | 2017109428600 | 发明 | 2017.10.11 |
| 一种二次电子发射薄膜的缓冲层及其制备方法 | 2016110973425 | 发明 | 2016.12.02 |
| 打拿极结构及基于该打拿极结构的弧形打拿极电子倍增器 | 2015108086274 | 发明 | 2015.11.19 |
| 一种打拿极薄膜结构及基于打拿极薄膜结构的电子倍增器 | 2015108086289 | 发明 | 2015.11.19 |
| 一种多层表面传导电子发射源结构及其制备方法 | 2015108084368 | 发明 | 2015.11.19 |
| 一种用于二次电子发射的金刚石薄膜的制备方法 | 2015102559804 | 发明 | 2015.05.19 |
| 一种表面传导电子发射源结构及其制作方法 | 201510036036X | 发明 | 2015.01.23 |
| 一种动态多级串联同轴碟型通道打拿级电子倍增器 | 2014106416701 | 发明 | 2014.11.13 |
(创新港)
