研究成果 - 胡 龙
| 论文标题 | 作者 | 发表/完成日期 | 期刊名称 |
|---|---|---|---|
| Experimental study of recovery time of a bulk gallium arsenide avalanche semiconductor switch in low-energy-triggered mode | Long Hu*, Yaogong Wang and Ming Xu | 2019-06-13 | Electronics Letters |
| Failure Mechanism of a Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch: Simulated Analysis and Experimental Results | Long Hu* , Jiancang Su, Ruicheng Qiu, Xu Fang, and Jingxuan Wang | 2018-09-01 | IEEE Transactions on Electron Devices |
| Ultra-Wideband Microwave Generation Using a Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch With Ultrafast Switching | Long Hu* , Jiancang Su, Ruicheng Qiu, and Xu Fang | 2018-04-01 | IEEE Transactions on Electron Devices |
| All solid-state high repetitive sub-nanosecond risetime pulse generator based on bulk gallium arsenide avalanche semiconductor switches | Long Hu*, Jiancang Su, Zhenjie Ding, Qingsong Hao, Yajun Fan, and Chunliang Liu | 2016-08-09 | Review of Scientific Instruments |
| 专利名称 | 申请号 | 专利类型 | 申请日期 |
|---|---|---|---|
| 一种匀化平面型光导开关电场的外导体电极结构及光导开关器件和方法（已授权） | CN202011433128.9 | 发明 | 2020.12.09 |
| 一种基于石墨烯界面层的异面结构GaAs光导开关及其制备工艺(已授权) | CN201911368860.X | 发明 | 2019.12.26 |
| 一种基于石墨烯界面层的体结构GaAs光导开关及其制备工艺（已授权） | CN201911368897.2 | 发明 | 2019.12.26 |
| 一种辐照腔中效应物内部场强的局部聚焦装置的构建方法（已授权） | CN201811527813.0 | 发明 | 2018.12.31 |
| 高重复频率、高电压、亚纳秒前沿的脉冲产生装置及方法（已授权） | CN201510833941.8 | 发明 | 2015.11.25 |
(创新港)
