研究成果 - 胡 龙
| 论文标题 | 作者 | 发表/完成日期 | 期刊名称 |
|---|---|---|---|
| Improved Current and Jitter Performances of Photoconductive Semiconductor Switch Based on Reduced Graphene Oxide/Metal Electrode | Li Zhu , Long Hu* , Xin Shen, Yue Sun , Xin Li , and Weihua Liu | 2023-02-20 | IEEE ELECTRON DEVICE LETTERS |
| The Initial Test of a Micro-Joules Trigger, Picosecond Response, Vertical GaN PCSS | Xianghong Yang , Yingxiang Yang, Long Hu* , Jingliang Liu, Xue Duan, Jia Huang, Xin Li* , and Weihua Liu | 2023-01-15 | IEEE PHOTONICS TECHNOLOGY LETTERS |
| Low Specific Contact Resistivity of 10−3 ·cm2 for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate | Xianghong Yang , Long Hu* , Xin Dang, Xin Li , Weihua Liu , Chuanyu Han, and Song Li | 2022-10-10 | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Research on the thermal failure mechanism of an opposed-contact gallium arsenide photoconductive semiconductor switch in avalanche mode | Yue Sun, Long Hu*, Yongdong Li*, Li Zhu, Xin Dang, Qingsong Hao and Xin Li | 2022-02-25 | Journal of Physics D: Applied Physics |
| A dimethyl methylphonate sensor based on HFIPPH modified SWCNTs | Haiyang Wu, Yubin Yuan, Qiang Wu, Xiangrui Bu, Long Hu, Xin Li, Xiaoli Wang and Weihua Liu* | 2022-01-28 | Nanotechnology |
| Enhancing the Sensitivity of GaN High Electron-Mobility Transistors-Based pH Sensor by Dual Function of Monolithic Integrated Planar Multi-Channel and Ultraviolet Light | Xianghong Yang; Jiapei Ao; Sichen Wu; Long Hu*; Xin Li*; Weihua Liu; Xiaoli Wang; Chuanyu Han | 2021-11-13 | IEEE Transactions on Electron Devices |
| GaAs 光导开关电极制备工艺及性能测试 | 党鑫，杨向红，孙岳，刘康，朱莉，胡龙*，李昕，刘卫华，王小力 | 2021-11-09 | 西安交通大学学报 |
| Investigation on the Mechanism of Triggering Efficiency of High-power Avalanche GaAs Photoconductive Semiconductor Switch | Yue Sun, Long Hu*, Xin Dang, Li Zhu, Xianghong Yang, Jia Huang, Yongdong Li, and Xin Li | 2021-09-27 | IEEE Electron Device Letters |
| 专利名称 | 申请号 | 专利类型 | 申请日期 |
|---|---|---|---|
| 一种匀化平面型光导开关电场的外导体电极结构及光导开关器件和方法（已授权） | CN202011433128.9 | 发明 | 2020.12.09 |
| 一种基于石墨烯界面层的异面结构GaAs光导开关及其制备工艺(已授权) | CN201911368860.X | 发明 | 2019.12.26 |
| 一种基于石墨烯界面层的体结构GaAs光导开关及其制备工艺（已授权） | CN201911368897.2 | 发明 | 2019.12.26 |
| 一种辐照腔中效应物内部场强的局部聚焦装置的构建方法（已授权） | CN201811527813.0 | 发明 | 2018.12.31 |
| 高重复频率、高电压、亚纳秒前沿的脉冲产生装置及方法（已授权） | CN201510833941.8 | 发明 | 2015.11.25 |
(创新港)
