| 论文标题 |
Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition |
| 作者 |
Z. F. Cheng, S. D. He, X. N. Han, X. D. Zhang, L. N. Chen, S. J. Duan, S. M. Zhang, and M. G. Xia* |
| 发表/完成日期 |
2024-01-26 |
| 期刊名称 |
J. Mater. Chem. C |
| 期卷 |
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| 相关文章 |
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| 论文简介 |
The microscale structural phase transition in TMDs from 2H to 1T or 1T' phases offer a distinct approach for modulating the electronic properties of these materials. Although phase engineering for contact has been partially investigated, the effect of embedding 1T domains in the semiconductor channel on electronic transport has rarely been studied yet. Here, we investigate the electronic performance of few-layer MoS2 FETs with local 1T structure phase transition. Through mild oxygen plasma treatment, we successfully incorporated the 1T phase into the 2H-MoS2 host and observed a significant improvement in the electron mobility of MoS2 FETs. On the contact side, the local 1T domain serves as a conductive bridge connecting the Au electrode and MoS2 channel, which substantially improves the carrier-injection efficiency. On the channel side, the 1T embedded 2H-MoS2 can effectively tailor the electronic structure of MoS2 channel, significantly increasing the channel conductivity. Compared with before oxygen plasma treatment, the MoS2 FET demonstrates about two orders of magnitude higher maximum electron mobility (up to 237 cm2 V−1 s−1). This study could further promote the development of advanced two-dimensional electronic devices with improved performance. |
Group 
(创新港)
