| 论文标题 |
A Study on Organic Thin-Film Transistors Using Hf–La Oxides With Different La Contents as Gate Dielectrics |
| 作者 |
Chuan Yu Han , Yuan Xiao Ma , Wing Man Tang, Xiao Li Wang, and P. T. Lai |
| 发表/完成日期 |
2018-03-20 |
| 期刊名称 |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
| 期卷 |
VOL. 65, NO. 3, MARCH 2018 |
| 相关文章 |
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| 论文简介 |
Theeffectsof La contentin HfLaO gatedielec-
tric on the performance of pentacene organic thin-film tran-
sistor (OTFT) fabricated on Si have been studied. The OTFT
with Hf 0.103 La 0.897 O y gate dielectric shows high perfor-
mance such as high carrier mobility of 3.45 cm 2 · V −1 · s −1
(132 times and 40 times higher than those of devices
using Hf oxide and La oxide, respectively), small threshold
voltage of −2.09 V, and negligible hysteresis of −0.029 V.
Binding-energy shift of Hf 4f peak in the X-ray photoelec-
tron spectroscopyspectrumindicatesthat La incorporation
can passivate the oxygen vacancies in HfO 2 . Atomic force
microscoperevealsthattheLaincorporationcanreducethe
surface roughnessof the gate dielectricby suppressingthe
crystallizationof HfO 2 . Therefore, by using Hf 0.103 La 0.897 O y
as gate dielectric, OTFT with high carrier mobility and small
threshold voltage can be obtained. |
(创新港)
