教材、专利和论文 - 王 小力
论文标题 | The growth behavior of graphene on iron-trichloride-solution-soaked copper substrates in a low pressure chemical vapor deposition |
作者 | Quanfu Li,Weihua Liu,Tuo Qu, Juan Zhang,Xin Li,Qikun Wang , Xiaoli Wang |
发表/完成日期 | 2015-01-04 |
期刊名称 | RSC Advances (SCI) |
期卷 | |
相关文章 | |
论文简介 | A copper substrate soaking-treatment with FeCl3 solution is introduced to significantly reduce the initial nucleation density of graphene (up to 6-fold from 0.29 to 0.05 μm−2), and the overall graphene coverage increase-rate is successfully increased. The reduction in nucleation density is attributed to the oxidization of copper by treatment with the FeCl3 solution according to the X-ray photoelectron spectroscopy results. The soaking-treatment results in a rougher surface and consequently significant surface morphology rebuilding during the chemical vapor deposition. Pretreatment of copper substrate by soaking in FeCl3 solution is a simple and economical approach to control graphene growth. Most importantly, the technique is compatible with the common patterning technique of graphene. |