| 论文标题 |
Ultrafast all-optical imaging technique using low-temperature grown GaAs/AlxGa1−xAs multiple-quantum-well semiconductor |
| 作者 |
Guilong Gao a,b,c, Jinshou Tian a,d,∗, Tao Wang a, Kai He a, Chunmin Zhang b,∗∗, |
| 发表/完成日期 |
2017-10-05 |
| 期刊名称 |
Physics Letters A |
| 期卷 |
381 |
| 相关文章 |
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| 论文简介 |
We report and experimentally demonstrate an ultrafast all-optical imaging technique capable of singleshot ultrafast recording with a picosecond-scale temporal resolution and a micron-order two-dimensional
spatial resolution. A GaAs/AlxGa1−xAs multiple-quantum-well (MQW) semiconductor with a picosecond
response time, grown using molecular beam epitaxy (MBE) at a low temperature (LT), is used for the first
time in ultrafast imaging technology. The semiconductor transforms the signal beam information to the
probe beam, the birefringent delay crystal time-serializes the input probe beam, and the beam displacer
maps different polarization probe beams onto different detector locations, resulting in two frames with
an approximately 9 ps temporal separation and approximately 25 lp/mm spatial resolution in the visible
range. |
(创新港)
