柴正 教授 博士生导师
Home - 柴 正
邮箱：zheng.chai@xjtu.edu.cn
地址：陕西省 西安市 咸宁西路28号
西安交通大学兴庆校区 仲英楼
（个人主页仍在建设中，请参考课题组个人页面：柴正-自旋电子材料与量子器件研究中心 (xjtu.edu.cn)）
| Paper Name | Author | Publication/Completion Time | Magazine Name |
|---|---|---|---|
| Markov Chain Signal Generation based on Single Magnetic Tunnel Junction | Xihui Yuan; Jiajia Jian; Zheng Chai; Suihuan An; Yawei Gao; Xue Zhou; Jian Fu Zhang; Weidong Zhang; Tai Min | 2023-10-13 | IEEE Electron Device Letters |
| New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors | Zeyu Hu; Weidong Zhang; Robin Degraeve; Daniele Garbin; Zheng Chai; Nishant Saxena; Pedro Freitas; Andrea Fantini; Taras Ravsher; Sergiu Clima; Jian Fu Zhang; Romain Delhougne; Ludovic Goux; Gouri Kar | 2022-12-29 | IEEE Transactions on Electron Devices |
| Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching | Xue Zhou; Zeyu Hu; Zheng Chai; Weidong Zhang; Sergiu Clima; Robin Degraeve; Jian Fu Zhang; Andrea Fantini; Daniele Garbin; Romain Delhougne; Ludovic Goux; Gouri Sankar Kar | 2022-06-01 | IEEE Electron Device Letters |
| Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector | Zheng Chai; Weidong Zhang; Sergiu Clima; Firas Hatem; Robin Degraeve; Qihui Diao; Jian Fu Zhang; Pedro Freitas; John Marsland; Andrea Fantini; Daniele Garbin; Ludovic Goux; Gouri Sankar Kar | 2021-09-01 | IEEE Electron Device Letters |
| Stochastic Computing Based on Volatile GeSe Ovonic Threshold Switching Selectors | Zheng Chai; Pedro Freitas; Wei Dong Zhang; Firas Hatem; Robin Degraeve; Sergiu Clima; Jian Fu Zhang; John Marsland; Andrea Fantini; Daniele Garbin; Ludovic Goux; Gouri Sankar Kar | 2020-08-17 | IEEE Electron Device Letters |
| GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator | Zheng Chai; Wei Shao; Weidong Zhang; James Brown; Robin Degraeve; Flora D. Salim; Sergiu Clima; Firas Hatem; Jian Fu Zhang; Pedro Freitas; John Marsland; Andrea Fantini; Daniele Garbin; Ludovic Goux; Gouri Sankar Kar | 2019-12-19 | IEEE Electron Device Letters |
| Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme | F. Hatem; Z. Chai; W. Zhang; A. Fantini; R. Degraeve; S. Clima; D. Garbin; J. Robertson; Y. Guo; J. F. Zhang; J. Marsland; P. Freitas; L. Goux; G. S. Kar | 2019-12-07 | 2019 IEEE International Electron Devices Meeting (IEDM) |
| Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors | Zheng Chai; Weidong Zhang; Robin Degraeve; Sergiu Clima; Firas Hatem; Jian Fu Zhang; Pedro Freitas; John Marsland; Andrea Fantini; Daniele Garbin; Ludovic Goux; Gouri Sankar Kar | 2019-06-24 | IEEE Electron Device Letters |
| Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors | Z. Chai; W. Zhang; R. Degraeve; S. Clima; F. Hatem; J. F. Zhang; P. Freitas; J. Marsland; A. Fantini; D. Garbin; L. Goux; G. S. Kar | 2019-06-09 | 2019 Symposium on VLSI Technology |
| TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device | Jigang Ma; Zheng Chai; Wei Dong Zhang; Jian Fu Zhang; John Marsland; Bogdan Govoreanu; Robin Degraeve; Ludovic Goux; Gouri Sankar Kar | 2018-12-02 | IEEE Transactions on Electron Devices |
| Impact of RTN on Pattern Recognition Accuracy of RRAM-Based Synaptic Neural Network | Zheng Chai; Pedro Freitas; Weidong Zhang; Firas Hatem; Jian Fu Zhang; John Marsland; Bogdan Govoreanu; Ludovic Goux; Gouri Sankar Kar | 2018-09-06 | IEEE Electron Device Letters |
| The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique | Zheng Chai; Weidong Zhang; Pedro Freitas; Firas Hatem; Jian Fu Zhang; John Marsland; Bogdan Govoreanu; Ludovic Goux; Gouri Sankar Kar; Steve Hall; Paul Chalker; John Robertson | 2018-05-04 | IEEE Electron Device Letters |
| Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals | Zheng Chai; Jigang Ma; Wei Dong Zhang; Bogdan Govoreanu; Jian Fu Zhang; Zhigang Ji; Malgorzata Jurczak | 2017-08-29 | IEEE Transactions on Electron Devices |
| Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement | J. Ma; Z. Chai; W. Zhang; B. Govoreanu; J. F. Zhang; Z. Ji; B. Benbakhti; G. Groeseneken; M. Jurczak | 2016-12-03 | 2016 IEEE International Electron Devices Meeting (IEDM) |
| RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism | Z. Chai; J. Ma; W. Zhang; B. Govoreanu; E. Simoen; J. F. Zhang; Z. Ji; R. Gao; G. Groeseneken; M. Jurczak | 2016-06-14 | 2016 IEEE Symposium on VLSI Technology |
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