发布时间：

2026-10-11

影响因子：

2.4

DOI码：

10.1039/d6ce00326e

论文名称：

The effect of vortex suppression on the largescale epitaxial growth of unidirectional MoS2

教研室：

应用物理系

发表刊物：

CrystEngComm

摘要：

The scalable synthesis of high-quality, single-crystalline two-dimensional molybdenum disulfide (MoS2) by chemical vapor deposition (CVD) is primarily hindered by inhomogeneous precursor delivery and nonuniform nucleation. While the “face-to-face” configuration improves precursor uniformity, its scalability to wafer-scale is limited by vortex formation. Herein, we introduce an open-ended boat design that fundamentally eliminates vortex and establishes a stable gas flow over the 1.5-inch sapphire substrate. Through full-reactor computational fluid dynamics (CFD) simulations and experimental validation, we precisely identify and resolve the vortex issue, demonstrating that our design ensures a uniform and sufficient supply of both Mo and S precursors across the entire substrate. This optimized flow environment not only facilitates epitaxial alignment via step-edge guidance on sapphire but also enables the expansion of large, well-oriented domains. As a result, highly uniform, unidirectional MoS2 quasi-single-crystals were achieved on 1.5-inch wafer-scale sapphire substrates. This study elucidates the crucial role of fluid dynamics in 2Dmaterial growth, effectively addressing the scalability challenge in conventional CVD processes.

论文类型：

期刊论文

学科门类：

理学

文献类型：

J

卷号：

28

页面范围：

3865-3873

ISSN号：

1466-8033

是否译文：

否

发表时间：

2026-06-29

收录刊物：

SCI

发布期刊链接：

https://doi.org/10.1039/d6ce00326e