https://doi.org/10.1021/acsaom.3c00450

WTe₂, as a member of Weyl semimetals, is a promising candidate for the next-generation optoelectronic device with the advantages of high response speed, broadband photoresponse, and low power consumption due to its unique band structure with conduction and valence bands touching at the Weyl nodes. Here, we report on the synthesis of large-scale continuous WTe₂ films and its application in self-powered broadband photodetectors. The films were synthesized on SiO₂/Si substrate using a modified chemical vapor deposition method with pre-deposited precursor particles. The pure 1T’ phase and the structural uniformity of the thin film were confirmed by Raman spectroscopy and energy dispersive X-ray spectroscopy. Photodetectors with asymmetric metal electrodes of Pd-WTe₂-Ag were designed and fabricated using shadow mask assisted ultra-high vacuum deposition. By measuring the self-powered photocurrent under the illumination of Xe lamp, it was revealed that the device is sensitive to a wide range (λ = 320 - 1200 nm) of light spectra while maintaining the on/off ratio (~10²), responsiveness (0.85 mA/W), and specific detectivity (1.23×10⁸ Jones). The response time reaches hundreds of milliseconds in different spectral bands. These results provide insights into future application of 1T’-WTe₂ in advanced optoelectronic devices like self-powered broadband photodetectors.

This work was mainly carried out by Yao Feng.