ASS: Broadband synaptic photoresponse in epitaxial Te/GaN hybrid-heterojunction
发布时间：2025-08-12
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- 发布时间：
- 2025-08-12
- 文章标题：
- ASS: Broadband synaptic photoresponse in epitaxial Te/GaN hybrid-heterojunction
- 内容：
Broadband synaptic photoresponse induced by the charged planar Te interlayer in epitaxial Te/GaN hybrid-heterojunction
Applied Surface Science 705, 1 October 2025, 163492
Highlights
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Te/GaN hybrid-heterojunction with charged planar Te interlayer has been proposed and realized for broadband synaptic photoresponse.
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Large-scale high-quality Te-GaN(0001) samples were grown by using UHV PVD method.
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Optoelectronic transport measurements confirmed self-powered broadband photoresponse and synaptic plasticity.
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First-principles calculations elucidated that the charged Te layer is induced by the polarization of GaN(0001).
This work was finished mainly by Wenmin Li, , who is currently a Ph.D. student.
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