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W. Zhao, Y. Koide, and M.Y. Liao*. MOSFET on P-type surface conductivity channel on n-type Diamond. IEEE Electron Device Letter, 45(12), 2024.
发布时间：2026-04-07 点击次数：
发布时间：2026-04-07
论文名称：W. Zhao, Y. Koide, and M.Y. Liao*. MOSFET on P-type surface conductivity channel on n-type Diamond. IEEE Electron Device Letter, 45(12), 2024.
是否译文：否
上一条：W. Zhao, G.Chen, M. Toda, Y. Koide and M.Y. Liao*. Higher Order Modes actuated Diamond MEMS Resonator for Advanced Mass Sensing. APL Material, 13(4), 2025.
下一条：W. Zhao, R.T. Rocha, N. Alcheikh and M.I. Younis*. Dynamic Response Amplification of Resonant Microelectromechanical Structure utilizing Multi-Mode Excitation. Mechanical System and Signal Processing, 196, 110347, 2023.
