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现任西安交通大学材料学院教授，入选"青年拔尖人才计划"。复旦大学博士，先后在东京大学、德州大学奥斯汀分校从事研究，2019年加入西交大。致力于先进电子材料与器件的计算研究，聚焦芯片器件小型化的功耗挑战，发展界面结构与输运计算方法，提出协同调控界面量子效应降低信息传输能耗的新途径。发表SCI论文80余篇，一作/通讯50余篇，包括Phys. Rev. Lett.、Nat. Commun.等，总引用2900余次。先后主持5项国家级项目，并获省杰出青年基金资助
发布时间：2025-06-18
文章标题：祝贺东茂强同学关于高阶各向异性磁电阻的工作在Physical Rivew B 上发表 （Phys. Rev. B 111, 174447（2025））！
内容： Anisotropic magnetoresistance (AMR) is a well-known magnetoelectric coupling phenomenon, commonly exhibiting twofold symmetry with respect to the angle of the magnetization relative to the current. In this study, we reveal the existence of high-order AMRs in two-dimensional (2D) magnetic monolayers. Based on density functional theory (DFT) calculations of Fe3GeTe2 and CrTe2 monolayers, we find that different energy bands contribute uniquely to AMR behavior. The high-order AMR is attributed to strong spin mixing at band crossing points, which induces significant Berry curvature. This curvature also contributes to the AMR for electrons with dominant spin-up or spin-down polarization characteristics. However, for electrons exhibiting strong spin mixing, the Berry curvature effect becomes nontrivial, resulting in high-order AMR. Our findings provide an effective approach to identifying and optimizing materials with high-order AMR, which is critical for designing high-performance spintronic devices. 详文请见：https://journals.aps.org/prb/abstract/10.1103/PhysRevB.111.174447
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