Personal profile
西安交通大学材料学院教授，入选该校"青年拔尖人才计划"。博士毕业于复旦大学，先后在东京大学、德克萨斯大学奥斯汀分校开展博士后研究，2019年加入西安交通大学。课题组致力于人工智能与数值计算驱动的先进电子材料与器件设计，围绕存算一体器件与新能源器件两大方向，开展从材料预测到器件设计的全链条研究。已在 Phys. Rev. Lett.、 Nat. Commun. Adv. Matter. 等期刊发表SCI论文80余篇（一作/通讯50余篇），总引用3000余次；主持国家级项目5项，并获省杰出青年科学基金资助。欢迎对计算材料、AI for Science、存算一体与自旋电子学感兴趣的同学加入课题组！
发布时间：2026-05-21
论文名称：M. Q. Dong, B. Liu, Z. H. Dai, Zhi-Xin Guo*, H. Xiang, X. G. Gong*, Fractional quantum multiferroics from coupling of fractional quantum ferroelectricity and altermagnetism, Physical Review Letters 136, 136702 (2026)
发表刊物：Physical Review Letters 136, 136702 (2026)
摘要：Multiferroics, which combine ferroelectric and magnetic order, offer a transformative platform for next-generation electronic devices. However, the intrinsic competition between the mechanisms driving ferroelectricity and magnetism in single-phase materials severely limits their performance, typically resulting in weak magnetoelectric coupling at room temperature. Here, we propose a solution to this long-standing challenge through the novel concept of fractional quantum multiferroics (FQMF), where strong magnetoelectric coupling is naturally realized by coupling fractional quantum ferroelectricity with altermagnetism. Symmetry analysis shows that reversing the fractional quantum ferroelectricity polarization necessarily inverts the altermagnetic spin splitting under parity-time or time-reversal operations. A minimal tight-binding model reproduces this effect, demonstrating electrically driven spin control without rotating the Néel vector. First-principles calculations further identify a broad family of candidate materials in two and three dimensions, including bulk MnTe, Cr2S3, Mn4Bi3NO15 and two-dimensional AB2 bilayers such as MnX2 (X=Cl, Br, I), CoCl2, CoBr2, and FeI2. Notably, MnTe exhibits a high Néel temperature ( ∼300 K) and a large electrically switchable spin splitting ( ∼0.8 eV), demonstrating room-temperature magnetoelectric performance that surpasses that of conventional multiferroics. To further showcase the technological potential, we propose an electric-field-controlled FQMF tunnel junction based on MnTe that achieves tunneling magnetoresistance exceeding 300%. This Letter establishes FQMF as a distinct and promising route to achieving room-temperature robust electrically controlled magnetism, opening a new avenue for voltage-controlled spintronics.
论文类型：期刊论文
通讯作者：M. Q. Dong B. Liu, Z. H. Dai, Zhi-Xin Guo Hongjun Xiang, and Xin-Gao Gong1
是否译文：否
版权所有：西安交通大学 陕ICP备05001571号
