发布时间：2026-05-21

论文名称：X. Zhang, B. Liu, J. Huang, X. Cao, Y. Zhang, Zhi-Xin Guo*, Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure Physical Review B 109, 205105 (2024)

摘要：In this study, we present first-principles calculations that introduce a nonvolatile spin field effect transistor (spin-FET) utilizing a van der Waals multiferroic heterostructure, specifically VSi2⁢N4/Sc2⁢CO2. We demonstrate that inverting the ferroelectric polarization in a Sc2⁢CO2 monolayer can effectively modulate the electronic states of a VSi2⁢N4 monolayer, enabling a transition from half-metal to half-semiconductor. This transition significantly alters the electronic transport properties. Furthermore, we construct a spin-FET device based on this multiferroic heterostructure and observe that the VSi2⁢N4/Sc2⁢CO2-based spin-FET exhibits exceptional all-electric-controlled performance. Notably, the inversion of the Sc2⁢CO2 ferroelectric polarization yields a substantial on-off current ratio, approximately 650%, under a minimal bias voltage of 0.02 V. Additionally, we identify a unique spatially separated spin-polarized transport phenomenon, wherein pure spin-up electrons transport exclusively through VSi2⁢N4, and spin-down electrons through Sc2⁢CO2. Our findings suggest a promising pathway for developing low-energy dissipation and nonvolatile FET devices.

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