发布时间：2026-05-21

论文名称：K. Rao, X. Zhang*, W. S. Hou, M. Q. Dong, Z. F. Dai, Z. X. Song, Zhi-Xin Guo*, Dimensional evolution of anisotropic magnetoresistance in MnBi2Te4, Physical Review B 113, 125401 (2026).

发表刊物：Physical Review B

摘要：Anisotropic magnetoresistance (AMR) plays a critical role in spintronic memory and magnetic sensing devices. Although AMR is generally weak in bulk magnets, it is markedly enhanced in two-dimensional systems. However, its systematic evolution with dimensionality remains largely unexplored. Here we investigate the dimensional dependence of AMR in the van der Waals antiferromagnet MnBi2⁢Te4 using density functional theory and Wannier-interpolated Boltzmann transport methods. Our results reveal a pronounced increase in the out-of-plane AMR as the sample thickness decreases, rising from 19.57% in the bulk to 42.93%, 52.17%, and 60.97% in the trilayer, bilayer, and monolayer, respectively. We uncover a mechanism governing this evolution: magnetization reorientation modulates the out-of-plane orbital hybridization between Bi and Te atoms, an effect that is strongly enhanced in thinner samples. This orbital hybridization variation directly tunes the spin-orbit coupling strength, leading to considerable band splitting that depends critically on the magnetization direction. Our work provides a unified microscopic understanding of dimension-dependent AMR and establishes MnBi2⁢Te4 as a promising platform for designing tunable spintronic devices.

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