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西安交通大学材料学院教授,入选该校"青年拔尖人才计划"。博士毕业于复旦大学,先后在东京大学、德克萨斯大学奥斯汀分校开展博士后研究,2019年加入西安交通大学。课题组致力于人工智能与数值计算驱动的先进电子材料与器件设计,围绕存算一体器件与新能源器件两大方向,开展从材料预测到器件设计的全链条研究。已在 Phys. Rev. Lett.、 Nat. Commun. Adv. Matter. 等期刊发表SCI论文80余篇(一作/通讯50余篇),总引用3000余次;主持国家级项目5项,并获省杰出青年科学基金资助。欢迎对计算材料、AI for Science、存算一体与自旋电子学感兴趣的同学加入课题组!
发布时间:2026-05-21
论文名称:H. F. Feng, B Liu, Zhi-Xin Guo*, Giant twist-angle dependence of thermal conductivity in bilayer graphene originating from strong interlayer coupling, Physical Review B (Letter) 108, L241405 (2023).
摘要:Recently, the twist-angle effect on two-dimensional van der Waals (vdW) materials, such as bilayer graphene, has attracted great attention. Many novel electronic, magnetic, and even optical properties induced by such effects have been discovered. However, the twist-angle effect on a phononic property is not so remarkable. By investigating the thermal conductivity of twisted bilayer graphene (TBG), we reveal that the trivial twist-angle effect on a phononic property observed in previous studies is owing to the nonlocalization nature of phonons. This characteristic makes phonons hardly trapped by the weak interlayer potentials induced by the twist-angle dependent moiré pattern. We propose that the twist-angle effect can be effectively enhanced by increasing the interface coupling. Using a sandwich structure composed of hexagonal boron nitride and TBG, we demonstrate that the thermal conductivity of TBG can be either significantly increased or dramatically decreased under the synergistic modulation of interlayer-coupling strength and twist angle. Particularly, the twist-angle effect can lead to a nontrivial reduction of thermal conductivity by up to 78% when a strong interlayer coupling is applied. The reduction is several times larger than that observed in the freestanding TBG originating from the twist-angle dependent phonon scatterings induced by the edge phonons. The underlying mechanism for the giant twist-angle dependent thermal conductivity is further revealed based on phonon transport theory. Our findings provide a platform for achieving efficient twist-angle modulation on the phonon transport property of vdW materials.
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