科研项目

作为项目负责人,目前正在承担国自然青年基金项目(2024年)、ZF预研项目、重点实验室开放基金、博士后科学基金面上资助(第76批)以及若干横向课题等。

 

曾作为技术骨干参与JCJQ项目、ZF预研项目、国自然面上基金项目等多个项目。

发表论文

2024年:

 

1. Huan He, Junlei Zhao, Jesper Byggmästar, Ru He, Kai Nordlund, Chaohui He, Flyura Djurabekova, (2024). Threshold displacement energy map of Frenkel pair generation in β-Ga2O3 from machine-learning-driven molecular dynamics simulations, Acta Materialia, 276, https://doi.org/10.1016/j.actamat.2024.120087.

 

2. 何欢, 白雨蓉, 田赏, 刘方, 臧航, 柳文波, 李培, 贺朝会. 质子入射AlxGa1–xN 材料的位移损伤模拟. 物理学报, 2024, 73(5): 052402.  10.7498/aps.73.20231671

 

3. 杨卫涛, 胡志良, 何欢, 莫莉华, 赵小红, 宋伍庆, 易天成, 梁天骄, 贺朝会, 李永宏, 王斌, 吴龙胜, 刘欢, 时光. 近存计算架构AI芯片中子单粒子效应. 物理学报, 2024, 73(13): 138502-1-138502-8. 10.7498/aps.73.20240430

 

4. 闫丽彬, 白雨蓉, 李培, 柳文波*, 何欢*, 贺朝会*, 赵小红. InP中点缺陷迁移机制的第一性原理计算. 物理学报, 2024, 73(18): 183101. doi: 10.7498/aps.73.20240754

 

6. Shi, T., Xu, X., Wan, H., Jia, P., Zhang, P., He, H., R, Gao., & Lu, C. (2024). Modeling swift heavy ion irradiation of substrate-supported two-dimensional material via two-temperature molecular dynamics simulations. AIP Advances14(8).  https://doi.org/10.1063/5.0227721

 

7. He, R., Zhao, J., Byggmästar, J., He, H., & Djurabekova, F.*(2024). Ultrahigh stability of oxygen sublattice in β-Ga2O3Physical Review Materials8(8), 084601.  https://doi.org/10.1103/PhysRevMaterials.8.084601

 

8. Yan, L., Chen, Z., Bai, Y., Liu, W.*, He, H.*, & He, C. (2024). First-Principles Study on Strain-Induced Modulation of Electronic Properties in Indium Phosphide. Nanomaterials14(21), 1756.  https://doi.org/10.3390/nano14211756

 

9. Bai, Y., Liao, W., Chen, Z., Li, W., Liu, W.*, He, H.*,& He, C. (2024). Molecular Dynamic Simulation of Primary Damage with Electronic Stop** in Indium Phosphide. Nanomaterials14(21), 1738.

 

10. 白雨蓉, 李培, 何欢, 刘方, 李薇, 贺朝会. 近地轨道质子和α粒子入射InP产生的位移损伤模拟. 物理学报, 2024, 73(5): 052401. doi: 10.7498/aps.73.20231499

 

 

2023年:

 

1. Azarov, A.*, Fernández, J. G., Zhao, J., Djurabekova, F., He, H., He, R., ... & Kuznetsov, A*. (2023). Universal radiation tolerant semiconductor. Nature Communications14(1), 4855.  https://doi.org/10.1038/s41467-023-40588-0

 

2. Zhao, J.*, Byggmästar, J., He, H., Nordlund, K., Djurabekova, F., & Hua, M*. (2023). Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials. npj Computational Materials9(1), 159.  https://doi.org/10.1038/s41524-023-01117-1

 

2022年:

1. Tian, S., He, C., He, H., Liao, W., Bai, Y., & Li, Y. (2022). Insight of displacement cascade evolution in gallium arsenide through molecular dynamics simulations. Computational Materials Science202, 111016.  https://doi.org/10.1016/j.nme.2021.101107

 

2. Wang, Y., Liu, W., Zhang, J., He, H., Yun, D., & Chen, P. (2022). The evolution of radiation-induced point defects near symmetrical tilt Σ5 (3 1 0)< 0 0 1> grain boundary in Ga stabilised δ-Pu: A molecular dynamics study. Nuclear Materials and Energy30, 101107.

 

2021年:

1. He, H., Liao, W., Wang, Y., Liu, W., Zang, H., & He, C. (2021). Stability and interaction of cation Frenkel pair in wurtzite semiconductor materials. Computational Materials Science196, 110554. https://doi.org/10.1016/j.commatsci.2021.110554

 

2. 白雨蓉, 李永宏, 刘方, 廖文龙, 何欢, 杨卫涛, 贺朝会. 空间重离子入射磷化铟的位移损伤模拟. 物理学报, 2021, 70(17): 172401. doi: 10.7498/aps.70.20210303

 

3. Liao, W., He, C., He, H., Tian, S., & Bai, Y. (2022). Electron–phonon coupling factor and electron heat capacity of 6H-SiC. Molecular Simulation48(4), 322-329.  https://doi.org/10.1080/08927022.2021.2015067

 

4. Liao, W., He, H., Li, Y., Liu, W., Zang, H., Wei, J., & He, C. (2021). Effects of electronic energy deposition on pre-existing defects in 6H–SiC. Nuclear Engineering and Technology53(7), 2357-2363. https://doi.org/10.1016/j.net.2021.01.017

 

2020年:

1. He, H., Liu, W., Zhang, P., Liao, W., Tong, D., Yang, L., ... & Zong, H. (2020). Dynamics studies of nitrogen interstitial in GaN from ab Initio calculations. Materials13(16), 3627. https://doi.org/10.3390/ma13163627

 

2. He, H., He, C., Zhang, J., Liao, W., Zang, H., Li, Y., & Liu, W. (2020). Primary damage of 10 keV Ga PKA in bulk GaN material under different temperatures. Nuclear Engineering and Technology52(7), 1537-1544. https://doi.org/10.1016/j.net.2019.12.027

 

3. 谢飞, 臧航, 刘方, 何欢, 廖文龙, 黄煜. 氮化镓在不同中子辐照环境下的位移损伤模拟研究. 物理学报, 2020, 69(19): 192401. doi: 10.7498/aps.69.20200064

 

4. Zhang, J., He, H., Liu, W., Kang, L., Yun, D., & Chen, P. (2020). Effects of grain boundaries on the radiation-induced defects evolution in BCC Fe–Cr alloy: a molecular dynamics study. Nuclear Materials and Energy22, 100726.

 

 

 

2019年:

1. Liao, W., He, C., & He, H. (2019). Molecular dynamics simulation of displacement damage in 6H-SiC. Radiation Effects and Defects in Solids174(9-10), 729-740. https://doi.org/10.1080/10420150.2019.1649260

 

2. 胡志良, 杨卫涛, 李永宏, 李洋, 贺朝会, 王松林, 周斌, 于全芝, 何欢, 谢飞, 白雨蓉, 梁天骄. 应用中国散裂中子源9号束线端研究65 nm微控制器大气中子单粒子效应. 物理学报, 2019, 68(23): 238502. doi: 10.7498/aps.68.20191196

 

3. Yang, W., Li, Y., Li, Y., Hu, Z., Xie, F., He, C., Wang, S., Zhou. B., He, H., Khan, Waseem.,& Liang, T. (2019). Atmospheric neutron single event effect test on Xilinx 28 nm system on chip at CSNS-BL09. Microelectronics Reliability99, 119-124. https://doi.org/10.1016/j.microrel.2019.05.004

 

4. Zhang, J., Liu, W., Chen, P., He, H., He, C., & Yun, D. (2019). Molecular dynamics study of the interaction between symmetric tilt Σ5 (2 1 0)< 0 0 1> grain boundary and radiation-induced point defects in Fe-9Cr alloy. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms451, 99-103.  https://doi.org/10.1016/j.nimb.2019.05.014