Papers (parts)
1. Linghang Wang, Wanqi Jie, single-crystal growth of mercury indium telluride (MIT) by Vertical Bridgman method, Journal of Crystal Growth, 2006, 290: 203-206.
2. Linghang Wang, Wanqi Jie, Gangqiang Zha, Gang Xu, Growth and characterization of mercury indium telluride single crystals，Materials Science and Engineering B, 2006, 133: 129-131.
3. Linghang Wang, Wanqi Jie, Hg(3-3x)In2xTe3: A Novel Semiconductor Material for Near Infrared Photovoltaic Detectors, Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEEE, Beijing, Jun 3-4, 2007: 133-136.
4. Linghang Wang, Yangchun Dong, Wanqi Jie, Growth and electrical properties of mercury indium telluride single crystals，Materials Research Bulletin, 2007, 42 (11): 1949-1954
5. Linghang Wang, Yangchun Dong, Wanqi Jie, Growth, structure and electrical properties of mercury indium telluride single crystals, Journal of Physics D: Applied Physics, 2007, 40: 3921-3924.
6. Linghang Wang, Wanqi Jie, Yang Yang, Study on the growth and thermal characteristics of mercury indium telluride crystals, Materials Science and Engineering B, 2008, 150 (1): 2-5.
7. Linghang Wang, Wanqi Jie, Yang Yang, Li Fu, High temperature x-ray diffraction study on phase transformation and lattice thermal expansion of mercury indium telluride crystals, Journal of Physics D: Applied Physics, 2008, 41: 085411.
8. Linghang Wang, Wanqi Jie, Yang Yang, Gang Xu, Li Fu, Etch pits observation and In distribution in mercury indium telluride single crsytals, Semiconductor Science and Technology, 2008, 23: 055015 (5pp)
9. Linghang Wang, Wanqi Jie, Yang Yang, Gang Xu, Li Fu, Defect characterization and composition distributions of mercury indium telluride single crystals, Journal of Crystal Growth, 2008, 310 (11): 2810-2814.
10. Linghang Wang, Wanqi Jie, Study of the thermal expansion of mercury indium telluride crystals, Transactions of Nonferrous Metals Society of China, 2009, 19: 776-779
11. Linghang Wang, Wanqi Jie, Yang Yang, Preparation and properties of a novel near infrared photovoltaic detectors single-crystal material, Journal of Physics: Conference Series, 2009, 152: 012010. MRS International Materials Research Conference (IMRC2008), Chongqing, Jun 9-12, 2008
12. Linghang Wang, Zhuo Xu, Zhenrong Li, Fei Li, Bridgman growth and thermal analysis of relaxor-based Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals, Materials Science and Engineering B, 2010, 170: 113-116.
13. Linghang Wang, Zhuo Xu, Zhenrong Li, Fei Li, Investigation on the thermal stability of relaxor-based Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals, Ferroelectrics, 2010, 402: 187-192.
14. Linghang Wang, Effects of vacancies on the thermal expansion of mercury indium telluride crystals, Materials Science Forum, 2011, 663-665: 1008-1011
15. Linghang Wang, Zhuo Xu, Zhenrong Li, Yuhui Wan, Junjie Gao, Fei Li, Variation of di-piezoelectric properties of PIN-PMN-PT crystals near morphotropic phase boundary along the growth direction, Joint Conference on IEEE International Symposium on Applications of Ferroelectrics (ISAF/PFM)/ International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, Vancouver, CANADA, JUL 24-27, 2011：1-4
16. Linghang Wang, Wanqi Jie, Bridgman Growth and Defect Characterization of Large Diameter Mercury Indium Telluride Crystals for NIR Detectors, Journal of crystal growth, 2013, 362: 327–329
17. Linghang Wang, Zhuo Xu, Zhenrong Li, Yuhui Wan, Junjie Gao，Fei Li, Growth, Crystalline quality and Transition Variation of Ternary Pb(In1/2Nb1/2)O3- Pb(Mg1/3Nb2/3)O3-PbTiO3 Ferroelectric Crystals，Journal of advanced dielectric, 2013, 3(1): 135003.
18. Linghang Wang, Shan Zhao, Li Jin, Fei Li, and Zhuo Xu, Effects of InNbO4 fabrication on perovskite PIN-PMN-PT, Journal of American Ceramic Society, 2014, 97(10): 3110-3115.
19. Fei Li, Linghang Wang, Li Jin, Zhuo Xu, Shujun Zhang, Achieving single domain relaxor-PT crystals by high temperature poling, CrystEngComm, 2014, 16 (14): 2892-7.
20. Fei Li, Linghang Wang, Li Jin, Dabin Lin, Leijing Li, Zhengrong Li, Zhuo Xu, and Shujun Zhang, Piezoelectric Activity in Perovskite Ferroelectric Crystals, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2015, 62 (1): 18-32
21. Peng Lv, Linghang Wang, Christopher S. Lynch, A phenomenological thermodynamic energy function for PIN-PMN-PT relaxor ferroelectric single crystals, Acta Materialia, 137 (2017) 93-102,DOI:10.1016/j.actamat.2017.07.031
22. Jinglei Li, Zhonghui Shen, Xianghua Chen, Shuai Yang, Wenlong Zhou, Mingwen Wang, Linghang Wang, Qiangwei Kou, Yingchun Liu, Qun Li, Zhuo Xu, Yunfei Chang, Shujun Zhang and Fei Li, Grain-orientation-engineered multilayer ceramic capacitors for energy storage applications, Nature Materials, volume 19, pages 999–1005 (2020)
23. Hongrui Jia, Shuai Yang, Weitong Zhu, Fei Li, Linghang Wang*, Improved piezoelectric properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 textured ferroelectric ceramics via Sm-doping method, Journal of Alloys and Compounds 881 (2021) 160666
24. Hongrui Jia, Weitong Zhu, Shuai Yang, Fei Li, Linghang Wang*, Large electric field induced strain of Bi(Mg1/2Ti1/2)O3-Pb(Mg1/3Nb2/3) O3-PbTiO3 ceramics textured by Template Grain Growth, Journal of the European Ceramic Society 41 (2021) 6406–6413
25. Hongrui Jia, Zhigang Liang, Zhen Li, Fei Li, Linghang Wang*, Texture technique to simultaneously achieve large electric field induced strain response and ultralow hysteresis in BMT-PMN-PT relaxor ferroelectric ceramics, Scripta Materialia 209 (2022) 114409
26. Hongrui Jia, Zhigang Liang, Zhen Li, Fei Li and Linghang Wang*, Bi(Mg1/2Zr1/2)O3–PbZrO3–PbTiO3 relaxor ferroelectric ceramics with large and temperature-insensitive electric field-induced strain response, J. Mater. Chem. C, 2022, 10, 337
27. Hongrui Jia, Jiahao Mi, Zhen Li, Linghang Wang*, Improved dielectric and piezoelectric properties of Sm-doped Pb(Mg1/3Nb2/ 3)O3–Pb(Zn1/3Nb2/3)-PbTiO3 ternary ferroelectric ceramics, Ceramics International 48 (2022) 14761–14766
Patents
1. 靳立，李飞，王领航，魏晓勇，张树君，一种高频段无介电弥散的电子陶瓷材料的处理工艺，中国发明专利，专利号：ZL201410001009.4，授权公告日2015.01.21
2. 王领航，一种三元系弛豫铁电压电晶体及其多温区生长方法，中国发明专利，专利号：ZL 201410377439.6，授权公告日2017.04.26
Prizes
1. 2001中国铁道建筑总公司科技进步二等奖。
2. 2006年度西安市科技进步三等奖。
3. 2014年教育部自然科学奖一等奖。
4. 2017年陕西省国防科学技术进步奖一等奖。
