2023年

1.       Li, Q.; Wang, J.; Chen, G.; He, S.; Zhang, Q.; Zhang, S.; Wang, R.; Fan, S.; Wang, H. Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate. Diam. Relat. Mater. 2023, 134, 109799, doi:10.1016/j.diamond.2023.109799.

2.       Wang, F.; Wang, K.; Chen, G.; Lin, F.; Wang, R.Z. Wang, W.; Zhang, M.; Hu, W.; Wang, H. Room temperature bonding of diamond/Si with Mo/Au interlayers in atmospheric air. Diam. Relat. Mater. 2023, 135, 109844, doi:10.1016/j.diamond.2023.109844.

2022年

3.       Zhang, S.; Li, Q.; Wang, J.; Wang, R.; Shao, G.; Chen, G.; He, S.; Wang, W.; Bu, R.; Wang, H.X. High Breakdown Electric Field Diamond Schottky Barrier Diode With SnO2Field Plate. IEEE Trans. Electron Devices 2022, 69, 6917–6921, doi:10.1109/TED.2022.3216534.

4.       Wang, R.; Wang, L.; Peng, B.; Fu, J.; Huangfu, C.; Bai, H.; Zhang, Y.; Yu, C.; Wang, K.; Wang, H.X. Temperature dependence of germanium vacancy centers in high-quality diamond after 300 keV ion implantation. J. Appl. Phys. 2022, 132, doi:10.1063/5.0117951.

5.       Chen, G.; Zhang, S.; Zhang, M.; Li, Q.; Wang, R.; He, S.; Wang, W.; Wang, H.X. Normally-off C-H Diamond FETs With Partial Al/C-O Diamond Junction Attaining Low off-State Current. IEEE Trans. Electron Devices 2022, 69, 6582–6586, doi:10.1109/TED.2022.3218521.

6.       Su, J.; Chen, G.; Wang, W.; Shi, H.; He, S.; Lv, X.; Wang, Y.; Zhang, M.; Wang, R.; Wang, H.X. Electrical characteristics of normally off hydrogen-terminated diamond field effect transistors with lanthanum oxide gate dielectric. Appl. Phys. Lett. 2022, 121, doi:10.1063/5.0119899.

7.       Fu, J.; Lu, Q.; Li, G.; Li, F.; Wang, F.; Wang, R.Z.; Zhu, T.F.; Liu, Z.; Chen, D.; Abdisa, G.; et al. Characterization of single crystal diamond damaged layer induced by ion implantation and restored by varying annealing conditions. Micro and Nanostructures 2022, 172, 207442, doi:10.1016/j.micrna.2022.207442.

8.       He, S.; Wang, Y.; Chen, G.; Wang, J.; Li, Q.; Zhang, Q.; Wang, R.; Zhang, M.; Wang, W.; Wang, H. Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn. Materials (Basel). 2022.

9.       Wang, J.; Shao, G.; Li, Q.; Chen, G.; Yan, X.; Song, Z.; Wang, Y.; Wang, R.; Wang, W.; Fan, S.; et al. Vertical Diamond Trench MOS Barrier Schottky Diodes With High Breakdown Voltage. IEEE Trans. Electron Devices 2022, 69, 6231–6235, doi:10.1109/TED.2022.3206178.

10.     Wang, R.; Peng, B.; Bai, H.; Guo, Z.; Wei, Q.; Wang, K.; Yu, C.; Niu, G.; Wang, H. Morphology , defects and electrical properties of boron-doped single crystal diamond under various oxygen concentration. Mater. Lett. 2022, 322, 132345, doi:10.1016/j.matlet.2022.132345.

11.     Wang, R.; Lin, F.; Wei, Q.; Niu, G.; Wang, H.X. Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al2O3 Substrates. Materials (Basel). 2022, 15, doi:10.3390/ma15020624.

12.     Su, J.; Wang, R.; Wang, H.X.; Fan, H. Investigation on magnetic properties of W-doped diamond via first-principles. Diam. Relat. Mater. 2022, 129, 109306, doi:10.1016/j.diamond.2022.109306.

13.     Zhang, Q.; Du, Y.; Chang, X.; Xu, B.; Chen, G.; He, S.; Zhang, D.; Li, Q.; Wang, J.; Wang, R.; et al. Partly-O-Diamond Solution-Gate Field-Effect Transistor as an Efficient Biosensor of Glucose. J. Electrochem. Soc. 2022, doi:10.1149/1945-7111/aca8d4.

14.     Zhang, S.; Wang, J.; Li, Q.; Shao, G.; Chen, G.; He, S.; Wang, R.; Wang, W.; Bu, R.; Wen, F.; et al. Improved-Performance Diamond Schottky Barrier Diode With Tin Oxide Interlayer. IEEE Trans. Electron Devices 2022, 69, 6260–6264.

15.     Wang, R.; Lin, F.; Niu, G.; Su, J.; Yan, X.; Wei, Q.; Wang, W.; Wang, K.; Yu, C.; Wang, H.X. Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation. Materials (Basel). 2022, 15, doi:10.3390/ma15020444.

16.     Wang, R.; Wang, J.; Niu, G.; Wei, Q.; Wu, S.; Yu, C.; Wang, H.X. The clarification of leakage conduction mechanism of HfO2/SiNxstacked a-IGZO TFT and its variation at high temperature. Appl. Phys. Lett. 2022, 121, doi:10.1063/5.0115980.

17.     Li, Q.; Wang, J.; Shao, G.; Chen, G.; He, S.; Zhang, Q.; Zhang, S.; Wang, R.; Fan, S.; Wang, H.X. Breakdown Voltage Enhancement of Vertical Diamond Schottky Barrier Diode With Annealing Method and Al2O3 Field Plate Structure. IEEE Electron Device Lett. 2022, 43, 1937–1940, doi:10.1109/LED.2022.3210511.

18.     王若铮，闫秀良，彭博，林芳，魏强，王宏兴.高质量硼掺杂单晶金刚石同质外延及电学性质研究. 人工晶体学报. 2022, 51, 893–900.

2021年

19.     Wei, Q.; Zhang, X.; Lin, F.; Wang, R.; Chen, G.; Wang, H. Fabrication of a Micron-Scale Three-Dimensional. Materials (Basel). 2021, 14, 3006.

20.     Wang, R.; Wei, Q.; Li, J.; Fu, J.; Liu, Y.; Zhu, T.; Yu, C.; Niu, G.; Wu, S.; Wang, H. Effect of HfO 2 -Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors. Coatings 2021, 11, 1–12.

21.     Wei, Q.; Lin, F.; Wang, R.; Zhang, X.; Chen, G.; Hussain, J.; He, D.; Zhang, Z.; Niu, G.; Wang, H.-X. Heteroepitaxy growth of single crystal diamond on Ir/Pd/Al2O3 (11–20) substrate. Mater. Lett. 2021, 303, 130483, doi:10.1016/j.matlet.2021.130483.

22.     Chang, X.; Yan, X.; Fan, S.; Su, J.; Wang, Y.F.; Wang, R.; Chen, G.; Wang, J.; Wang, W.; Wang, H.X. Suppressing Nitrogen-Vacancy Centers to Enhance Performance of Diamond Ultraviolet Photodetector via Growing with Tungsten. IEEE Trans. Electron Devices 2021, 68, 6228–6232, doi:10.1109/TED.2021.3116932.

23.     Wei, Q.; Niu, G.; Wang, R.; Chen, G.; Lin, F.; Zhang, X.; Zhang, Z.; Wang, H.X. Heteroepitaxy of single crystal diamond on Ir buffered KTaO3 (001) substrates. Appl. Phys. Lett. 2021, 119, 092194, doi:10.1063/5.0045886.

2020年

24.     Song, W.; Zhao, D.; Wang, J.; Liu, Z.; Wang, Y.; Chang, X.; Wang, R.; Wang, W.; Abbasi, H.N.; Wang, H. Characteristics of ruthenium ohmic contact to heavily boron doped diamond by post-annealing. Diam. Relat. Mater. 2020, 106, doi:10.1016/j.diamond.2020.107869.

25.     Wei, K.; Wang, R.; Li, J.; Liu, B.; Wei, Q.; Wu, R.; Wu, S.; Hu, W.; Wang, H. Secondary electron emission properties of double-layer B-doped diamond films. Diam. Relat. Mater. 2020, 106, doi:10.1016/j.diamond.2020.107826.

26.     Wang, W.; Wang, Y.; Zhang, M.; Wang, R.; Chen, G.; Chang, X.; Lin, F.; Wen, F.; Jia, K.; Wang, H.-X. An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor with Lanthanum Hexaboride Gate Material. IEEE Electron Device Lett. 2020, 41, doi:10.1109/LED.2020.2972330.

27.     Zhu, T.F.; Liang, Y.; Liu, Z.; Fu, J.; Wang, Y.F.; Shao, G.Q.; Zhao, D.; Wang, J.; Wang, R.; Wei, Q.; et al. Nanocone structures enhancing nitrogen-vacancy center emissions in diamonds. Coatings 2020, 10, 1–10, doi:10.3390/COATINGS10060513.

2019年

28.     Hussain, J.; Abbasi, H.N.; Wang, W.; Wang, Y.F.; Wang, R.; Wang, H.X. Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3. AIP Adv. 2020, 10, 2–8, doi:10.1063/5.0002120.

29.     Wang, Y.-F.; Wang, W.; Chang, X.; Wang, J.; Fu, J.; Zhu, T.; Liu, Z.; Liang, Y.; Zhao, D.; Liu, Z.;Wang, H.-X;Wang, R.*. Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond. MRS Commun. 2019, 9, doi:10.1557/mrc.2019.20.

30.     Zhao, D.; Liu, Z.; Wang, J.; Yi, W.; Wang, R.; Wang, W.; Wang, K.; Wang, H.X. Schottky barrier diode fabricated on oxygen-terminated diamond using a selective growth approach. Diam. Relat. Mater. 2019, 99, 107529, doi:10.1016/j.diamond.2019.107529.

31.     Zhao, D.; Liu, Z.; Wang, J.; Yi, W.; Wang, R.; Wang, K.; Wang, H. Performance Improved Vertical Diamond Schottky Barrier Diode with Fluorination-Termination Structure. IEEE Electron Device Lett. 2019, 40, doi:10.1109/LED.2019.2923062.

32.     Wang, Y.F.; Wang, W.; Chang, X.; Abbasi, H.N.; Zhang, X.; Wang, R.; Wang, H.X. Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3. Diam. Relat. Mater. 2019, 99, 107532, doi:10.1016/j.diamond.2019.107532.

33.     Zhang, H.; Wang, Y.; Wang, R.; Zhang, X.; Liu, C. Optimizing the properties of InGaZnOx thin film transistors by adjusting the adsorbed degree of Cs⁺ Ions. Materials (Basel). 2019, 12, 2300, doi:10.3390/ma12142300.

34.     Zhao, D.; Liu, Z.; Wang, J.; Yi, W.; Wang, R.; Wang, W.; Wang, K.; Wang, H. Reduction in reverse leakage current of diamond vertical Schottky barrier diode using SiN <inf>X</inf> field plate structure. Results Phys. 2019, 13, doi:10.1016/j.rinp.2019.102250.

35.     Wang, Y.-F.; Wang, W.; Chang, X.; Wen, F.; Abbasi, H.N.; Wang, R.; Fu, J.; Liu, Z.; Zhao, D.; Wang, H.-X. Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiO4/Al2O3. Diam. Relat. Mater. 2019, 99, doi:10.1016/j.diamond.2019.107530.

36.     Chang, X.; Wang, Y.-F.; Zhang, X.; Wang, R.; Liu, Z.; Fu, J.; Zhao, D.; Li, F.; Wang, J.; Wang, W.; et al. Iridium size effects in localized surface plasmon-enhanced diamond UV photodetectors. Appl. Surf. Sci. 2019, 487, doi:10.1016/j.apsusc.2019.04.268.

37.     Fu, J.; Zhu, T.; Liang, Y.; Liu, Z.; Wang, R.; Zhang, X.; Wang, H.-X. Fabrication of capacitive pressure sensor using single crystal diamond cantilever beam. Sci. Rep. 2019, 9, doi:10.1038/s41598-019-40582-x.

38.     Fu, J.; Wang, Y.; Wang, J.; Liu, Z.; Wang, R.; Zhu, T.; Liang, Y.; Shao, G.; Liu, Z.; Zhao, D.; et al. Fabrication of hundreds of microns three-dimensional single crystal diamond channel along with high aspect ratio by two-step process. Mater. Lett. 2019, 255, doi:10.1016/j.matlet.2019.126556.

before 2019

39.     Wang, R.; Wu, S.; Jia, D.; Wei, Q.; Zhang, J.  Influence of different conditions on the electrical performance of amorphous InGaZnO thin-film transistors with HfO 2 /SiN x stacked dielectrics . J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom. 2017, 35, 051204, doi:10.1116/1.4997416.

40.     Li, X.-Y.; Wang, R.-Z.; Wu, S.-L.; Li, Z.-C. Effect of insulating layer material and structure on performance of thin film transistors. Chinese J. Liq. Cryst. Displays 2017, 32, doi:10.3788/YJYXS20173205.0344.

41.     Wang, R.Z.; Wu, S.L.; Li, X.Y.; Zhang, J.T. The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics. Solid. State. Electron. 2017, 133, 6–9, doi:10.1016/j.sse.2017.04.004.