null
分享到:
Congratulations to Junsheng Huang for his paper published in Physical Review Applied！
发布者: 李平 | 2021-09-24 | 6074

Promising properties of a sub-5-nm monolayer MoSi2N4 transistor

See: https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.16.044022

新
News List
闻列表
更多新闻 ++