Congratulations to Junsheng Huang for his paper published in Physical Review Applied！
发布时间：2021-09-24
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- 发布时间：
- 2021-09-24
- 文章标题：
- Congratulations to Junsheng Huang for his paper published in Physical Review Applied！
- 内容：
Promising properties of a sub-5-nm monolayer MoSi2N4 transistor
See: https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.16.044022