论文：

1.Y. Yuan, R. Gao, Q. Wu, S. Fang, X. Bu, Y. Cui, C. Han*, L. Hu, X. Li, X. Wang, L. Geng, and W. Liu*, "Artificial Leaky Integrate-and-Fire Sensory Neuron for In-Sensor Computing Neuromorphic Perception at the Edge," ACS Sensor,   2023.

2. C. Y. Han*, S. L. Fang, Y. L. Cui, W. Liu, S. Q. Fan, X. D. Huang, X. Li, X. L. Wang, G. H. Zhang, W. M. Tang, P. T. Lai, J. Liu, X. Wan, Z. Yu, and L. Geng, "Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network," Advanced Electronic Materials, vol. 9, p. 2300018, 2023.
3.  S. L. Fang, C. Y. Han*, Z. R. Han, B. Ma, Y. L. Cui, W. Liu, S. Q. Fan, X. Li, X. L. Wang, G. H. Zhang, X. D. Huang, and L. Geng, An Artificial Spiking Afferent Neuron System  Achieved by 1M1S for Neuromorphic Computing, IEEE Transactions on Electron Devices, vol. 69, no. 5, pp. 2346-2352, 2022.
4. S. L. Fang, C. Y. Han*, W. Liu, Z. R. Han, B. Ma, Y. L. Cui, S. Q. Fan, X. Li, X. L. Wang, G. H. Zhang, J. Q. Yin, X. D. Huang, and L. Geng, "A bioinspired flexible artificial mechanoreceptor based on VO2 insulator-metal transition memristor," Journal of Alloys and Compounds, vol. 911, p. 165096, 2022.
5. C. Y. Han*, Z. R. Han, S. L. Fang, S. Q. Fan, J. Q. Yin, W. H. Liu, X. Li, S. Q. Yang, G. H. Zhang, X. L. Wang, and L. Geng, "Characterization and Modelling of Flexible VO2 Mott Memristor for the Artificial Spiking Warm Receptor," Advanced Materials Interfaces, vol. 7, no. 19, p. 2200394, 2022.
6. S. L. Fang, C. Y. Han*, W. H. Liu, X. Li, X. L. Wang, X. D. Huang, et al., "Multilevel resistive random access memory achieved by MoO3/Hf/MoO3stack and its application in tunable high-pass filter," Nanotechnology, vol. 32, 2021. 
7. C. Y. Han#,*, Y. Li#, Z. X. Zhang, W. H. Liu, X. Li, X. Guo, J. Wan, G. H. Zhang, X. L. Wang, and Q. Lin*, "An artifical synapse based on graphene field effect transistor with silver gel/polarized-aptamer gate," Organic Electronics,2021, 92(5):106118.
8. C. Y. Han, W. M. Tang*, and P.-T. Lai*, "High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering," Applied Surface Science,2021, 544:148656.
9. C. Y. Han, P.-T. Lai*, and W. M. Tang*, "High-performance pentacene organic thin-film transistor based on room-temperature-processed Hf0.13 La0.87O as gate dielectric," IEEE  Electron Device Letters,2021, 42(3):339-342.
10. S. L. Fang, W. H. Liu, X. Li, X. L. Wang, L. Geng, M. S. Wu, X. D. Huang, and C. Y. Han*, "Biodegradable transient resistive random-access memory based on MoO3/MgO/MoO3 stack," Applied Physics Letters,2019, 115(24):244102
11.  C. Y. Han*, Z. X. Zhang, W. H. Liu, X. Li, L. Geng, L. Wang, and X. L. Wang*, "Effects of CaO Interlayer on the Performance of Biodegradable Transient MgO-Based Resistive Random Access Memory," IEEE Transactions on Electron Devices,2020, 67(2):481-486.
12.  C. Y. Han, Y. X. Ma, W. M. Tang, X. L. Wang, and P. T. Lai*, "A study on organic thin-film transistors using Hf-La oxides with different La contents as gate dielectrics," IEEE Transactions on Electron Devices,2018, 65(3):1107-1112.
13.  C. Y. Han, W. M. Tang, and P. T. Lai*, "High-mobility pentacene organic thin-film transistor with LaxNb(1-x)Oy gate dielectric fabricated on vacuum tape," IEEE Transactions on Electron Devices,2017, 64(4):1716-1722.
14. C. Y. Han, Y. X. Ma, W. M. Tang, X. L. Wang, and P. T. Lai*, "A study on pentacene organic thin-film transistor with different gate materials on various substrates," IEEE Electron Device Letters,2017, 38(6):744-747.
15. C. Y. Han, W. M. Tang, C. H. Leung, C.-M. Che, and P. T. Lai*, "A study on La incorporation in transition-metal (Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-Film transistor," IEEE Transactions on Electron Devices,2015, 62(7):2313-2319.
16. C. Y. Han, J. Q. Song, W. M. Tang, C. H. Leung, and P. T. Lai*, "High-performance organic thin-film transistor by using LaNbO as gate dielectric," Applied Physics Letters,2015, 107(3).
17. J. Song, C. Y. Han, and P. T. Lai*, "Comparative study of Nb2O5, NbLaO, and La2O3 as gate dielectric of InGaZnO thin-film transistor," IEEE Transactions on Electron Devices,2016, 63(5):1928-1933.
18. C. Y. Han, W. M. Tang, C. H. Leung, C. M. Che, and P. T. Lai*, "High-mobility pentacene thin-film transistor by using LaxTa(1-x)Oy as gate dielectric," Organic Electronics,2014, 15(10):2499-2504.
19. C. Y. Han, W. M. Tang, C. H. Leung, C. M. Che, and P. T. Lai*, "High-Performance Pentacene Thin-Film Transistor With High-kappa HfLaON as Gate Dielectric," IEEE Electron Device Letters,2013, 34(11):1397-1399.
20. C. Y. Han, C. H. Leung, P. T. Lai, W. M. Tang, C. M. Che, and Ieee, Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HITiO as gate dielectric, 2013.
21. C. Y. Han, C. H. Leung, P. T. Lai, W. M. Tang, and C. M. Che, Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric, 2013.
22. L. Chen, C. Gong, G. Zhang, C. Han, X. Li, W. Liu, et al., Graphene synaptic transistor based on Ion-Gel dielectric, 2019.
23. L. G. Beka, X. Li, X. Wang, C. Han, and W. Liu, "Reduced graphene oxide/CoS2 porous nanoparticle hybrid electrode material for supercapacitor application," Rsc Advances, vol. 9, pp. 26637-26645, Aug 27 2019.
24. J. Song, C. Han, and P. T. Lai, "Comparative Study of Nb2O5, NbLaO, and La2O3 as Gate Dielectric of InGaZnO Thin-Film Transistor," IEEE Transactions on Electron Devices, vol. 63, pp. 1928-1933, May 2016.
25. L. X. Qian, X. Z. Liu, C. Y. Han, and P. T. Lai, "Improved Performance of Amorphous InGaZnO Thin-Film Transistor With Ta2O5 Gate Dielectric by Using La Incorporation," IEEE Transactions on Device and Materials Reliability, vol. 14, pp. 1056-1060, Dec 2014.
26. Y.-X. Ma, C.-Y. Han, and P. T. Lai, Carrier-Mobility Improvement for Pentacene OTFT with LaZrO Dielectric by using Pd Gate, 2016.
27. Y. X. Ma, C. Y. Han, W. M. Tang, and P. T. Lai, "Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors," Ieee Electron Device Letters, vol. 39, pp. 963-966, Jul 2018.
28. Y. X. Ma, C. Y. Han, W. M. Tang, and P. T. Lai, "High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric," Applied Physics Letters, vol. 111, Jul 2017.
29.  Y. Ma, W. M. Tang, C. Han, and P. T. Lai, "High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb," Physica Status Solidi a-Applications and Materials Science, vol. 215, Mar 2018.
30. B. Li, C. Y. Han, P. T. Lai, and W. M. Tang, "Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor," Thin Solid Films, vol. 667, pp. 28-33, Dec 2018.


 



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