奖项

没有找到条目。
奖项名称 获奖年份 奖项类型 奖项等级 申报部门
单粒子效应×××的建立及应用 2002 省部级科技成果奖 一等奖 总装备部
单粒子烧毁和栅穿效应的×××方法与实验研究 2001 省部级科技成果奖 三等奖 总装备部
×××辐射效应机理和规律研究 1998 省部级科技成果奖 三等奖 国防科工委

专利

没有找到条目。
专利名称 申请号 专利类型 申请日期
一种碳纳米管同位素电池 ZL2009 1 0023563.1 发明 2009.08.11
一种消除存储器件总剂量效应的数据取反方法 ZL2009 1 0023281.1 发明 2009.07.10
复合型同位素电池 ZL2009 1 0022320.6 发明 2009.05.04
微通道板型复合同位素电池 ZL2008 1 0017576.3 发明 2008.02.29
用于pA量级质子束流测量的法拉第探测器 ZL 01 2 46812.6 实用新型 2002.07.06

论文

 

1.       Wei, Jia-Nan; He, Chao-Hui*; Li, Peiet al. Impact of layout and profile optimization for inverse-mode SiGe HBT on SET and TID responses. MICROELECTRONICS RELIABILITY, 105:, FEB 2020, IF:1.483, Q3, SCI: WOS:000510971600002, DOI:10.1016/j.microrel.2019.113561

2.       Hu Zhi-Liang; Yang Wei-Tao; Li Yong-Hong; Li yang;He chaohuiet al. Atmospheric neutron single event effect in 65 nm microcontroller units by using CSNS-BL09. ACTA PHYSICA SINICA , 68(23): 238502, DEC 5 2019, IF:0.643, Q4, SCI: WOS:000501344000033, DOI: 10.7498/aps.68.20191196

3.       Pei Li, ChaoHui He*, HongXia Guo, JinXin Zhang, YongHong Li, JiaNan Wei. Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes. MICROELECTRONICS RELIABILITY, 103: 113499, DEC 2019, IF:1.483, Q3, SCI: WOS:000500386300006,DOI: 10.1016/j.microrel.2019.113499

4.       Weitao Yang, Yonghong Li, Yang Li, Zhiliang Hu, Fei Xie, Chaohui He*,Songlin Wang,Bin Zhou,Huan He,Waseem Khan, Tianjiao Liang. Single-event effects induced by medium-energy protons in 28 nm system-on-chip. NUCLEAR SCIENCE AND TECHNIQUES, 30(10):151, OCT 2019,IF: 0.961, Q3, SCI: WOS:000488225200007, DOI: 10.1007/s41365-019-0672-5

5.       Xuecheng Du, Chaohui He*, Shuhuan Liu, Dongyang Luo, Xiaozhi Du, Weitao Yang, Yonghong Li, Yunyun Fan. Analysis of sensitive blocks of soft errors in the Xilinx Zynq-7000 System-on-Chip. Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 940: 125-128, OCT.1 2019, IF: 1.433, Q2, SCI: WOS:000475349600020, DOI: 10.1016/j.nima.2019.06.015

6.       Wei, JN; He, CH*; Li, P; Li, YH; Guo, HX.Impact of displacement damage on single event transient charge collection in SiGe HBTs. Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment,938:29-35, SEP 11 2019, IF: 1.433,Q2, SCI: WOS:000472016300006,DOI: 10.1016/j.nima.2019.05.098

7.       Khan, Waseem; He, Chao-Hui*; Zhang, Qing-Min; Cao Yu. Design of CsI(TI) detector system to search for lost radioactive source. NUCLEAR SCIENCE AND TECHNIQUES,30(9)132SEP 2019, IF: 0.961,Q3, SCI: WOS:000482469600001,DOI: 10.1007/s41365-019-0658-3

8.       Liao, Wenlong; He, Chaohui*; He, Huan. Molecular dynamics simulation of displacement damage in 6H-SiC. RADIATION EFFECTS AND DEFECTS IN SOLIDS,174(9-10): 729-740, OCT 3 2019,IF: 0.636 Q4, SCI: WOS:000479919200001, DOI: 10.1080/10420150.2019.1649260

9.       Yang, Weitao; Li, Yonghong; Li, Yang; Atmospheric neutron single event effect test on Xilinx 28 nm system on chip at CSNS-BL09. MICROELECTRONICS RELIABILITY, 99: 119-124, AUG 2019, IF:1.483, Q3, SCI: WOS:000496833600013, DOI: 10.1016/j.microrel.2019.05.004

10.    Zhang, Jiahui; Liu, Wenbo; Chen, Piheng; He Chaohui. Molecular dynamics study of the interaction between symmetric tilt Sigma 5(210) < 0 0 1 > grain boundary and radiation-induced point defects in Fe-9Cr alloy. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,451: 99-103, JUL 15 2019,IF: 1.255,Q3, SCI: WOS:000472984300020, DOI: 10.1016/j.nimb.2019.05.014

11.    Wei, JN; He, CH Li, P; Li, YH ; Guo, HX. Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor. CHINESE PHYSICS B, 28(7): 076106, JUL 2019, IF: 1.469, Q3, SCI: WOS:000476831600006, DOI: 10.1088/1674-1056/28/7/076106

12.    Zhao, Wen; He, Chaohui; Chen, Wei; Single-Event Double Transients in Inverter Chains Designed With Different Transistor Widths. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 66(7): 1491-1499, JUL 2019, IF: 1.455, Q2, SCI: WOS:000476782600019, DOI: 10.1109/TNS.2019.2895610

13.    Li, Ruibin; Wang, Chenhui; Chen, Wei;He Chaohui. Synergistic Effects of TID and ATREE in Vertical NPN Bipolar Transistor. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 66(7): 1566-1573, JUL 2019, IF: 1.455, Q2, SCI: WOS:000476782600028, DOI: 10.1109/TNS.2019.2909690

14.    Yang, Weitao; Du, Xuecheng; Guo, Jinlong; Wei, Junze; Du, Guanghua; He, Chaohui*; Liu, Wenjing; Shen, Shuaishuai; Huang, Chengliang; Li, Yonghong; Fan, Yunyun. Preliminary single event effect distribution investigation on 28 nm SoC using heavy ion microbeam. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2019, 450:323-326,IF: 1.255,Q3,SCI: WOS:000474501400066, DOI: 10.1016/j.nimb.2018.09.038

15.    Li, Ruibin; He, Chaohui*; Chen, Wei; Contrast of latch-up induced by pulsed gamma rays in CMOS circuits after neutron irradiation and TID accumulation. MICROELECTRONICS RELIABILITY, 98: 42-48, JUL 2019, IF:1.483, Q3, SCI: WOS:000472692700006, DOI: 10.1016/j.microrel.2019.04.015

16.    Khan, Waseem; He, Chaohui*; Cao, Yu. HPGe detector efficiencies for extended sources using the Monte Carlo method. RADIATION EFFECTS AND DEFECTS IN SOLIDS,174(5-6): 548-558,JUN 3 2019, IF: 0.636,Q4, SCI: WOS:000474639500014, DOI: 10.1080/10420150.2019.1619733

17.    Liu, Yan; Chen, Wei; He, Chaohui; Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons. CHINESE PHYSICS B, 28(6): 067302, JUN 2019, IF: 1.469,Q3,SCI: WOS:000471648500002,DOI: 10.1088/1674-1056/28/6/067302

18.    Wei, Jia-Nan; He, Chao-Hui*; Li, Pei; Li, Yong-Hong. Research on SEE mitigation techniques using back junction and p(+) buffer layer in domestic non-DTI SiGe HBTs by TCAD. CHINESE PHYSICS B, 28(6): 068503,JUN 2019, IF: 1.469,Q3, SCI: WOS:000471658600002, DOI: 10.1088/1674-1056/28/6/068503

19.    Zong, Pengfei; Cao, Duanlin; Cheng, Yuan; He chaohui; Carboxymethyl cellulose supported magnetic graphene oxide composites by plasma induced technique and their highly efficient removal of uranium ions. CELLULOSE, 26(6): 4039-4060, APR 2019, IF: 4.379, Q1, SCI: WOS:000464849500029,DOI: 10.1007/s10570-019-02358-4

20.    Wei,JN;He,CH*;Li,P;Li,YH;G, HX. Simulation of substrate contact effects on heavy ion-induced current transient in SiGe HBT. MICROELECTRONICS RELIABILITY, 95: 28-35, APR 2019, IF:1.483, Q3, SCI: WOS:000464479300004,DOI: 10.1016/j.microrel.2019.02.011

21.    Li, Ruibin; He, Chaohui*; Chen, Wei; Impact of TID on latch up induced by pulsed irradiation in CMOS circuits. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 440: 95-100, FEB 1 2019,IF: 1.255,Q3, SCI: WOS:000456352200015, DOI: 10.1016/j.nimb.2018.11.036

22.    Khan, Waseem; He, Chaohui*. Calibration of HPGe Detector Efficiencies With Self-Absorption Correction of Gas Sphere Sources. JOURNAL OF NUCLEAR ENGINEERING AND RADIATION SCIENCE,5(1): 011018, JAN 2019, SCI: WOS:000457710900023, DOI: 10.1115/1.4041338

23.    Wei, JN; Guo, HX; Zhang, FQ; He, CH*; Ju, AA; Li, YH. Single event effects in commercial FRAM and mitigation technique using neutron-induced displacement damage. MICROELECTRONICS RELIABILITY, 92: 149-154, JAN 2019, IF:1.483, Q3, SCI: WOS:000456760500018,DOI: 10.1016/j.microrel.2018.12.004

24.    Zong, Pengfei; Cao, Duanlin; Cheng, Yuan;He Chaohui. Enhanced performance for Eu(iii) ion remediation using magnetic multiwalled carbon nanotubes functionalized with carboxymethyl cellulose nanoparticles synthesized by plasma technology. INORGANIC CHEMISTRY FRONTIERS,5(12): 3184-3196, DEC 1 2018, IF: 5.934, Q1, SCI: WOS: 000452114200024,DOI: 10.1039/c8qi00901e

25.    Du, Xiaozhi; Luo, Dongyang; He, Chaohui; A Fine-Grained Software-Implemented DMA Fault Tolerance for SoC Against Soft Error. JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 34(6): 717-733,DEC 2018, IF: 0.676,Q4, SCI: WOS:000451435700009, DOI: 10.1007/s10836-018-5757-2

26.    Xu, Mengxuan; Chen, Liang; Liu, Bo; He Chaohui; Effects of photonic crystal structures on the imaging properties of a ZnO:Ga image converter. OPTICS LETTERS, 43(22): 5647-5650, NOV 15 2018, IF: 3.866,Q1, SCI: WOS:000450159700040, DOI: 10.1364/OL.43.005647

27.    Shen Shuai-Shuai; He Chao-Hui*; Li Yong-Hong. Non-ionization energy loss of proton in different regions in SiC. ACTA PHYSICA SINICA,67(18): 182401, SEP 20 2018, IF: 0.644,Q4, SCI: WOS:000445538300004,DOI: 10.7498/aps.67.20181095

28.    Zhao Wen, He Chaohui, Chen, Wei, Chen Rongmei, Cong Peitian, Zhang Fengqi, Wang Zujun Shen Chen, Zheng Lisang, Guo Xiaoqiang. Single-event multiple transients in guard-ring hardened inverter chains of different layout designs. MICROELECTRONICS RELIABILITY, 2018.8, 87: 151-157, IF: 1.483, Q3,SCI: WOS:000441856500017, DOI:10.1016/j.microrel. 2018.06.014

29.    Zhang, Jin-xin; Guo, Qi; Guo, Hong-xia; He Chaohui. Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases. MICROELECTRONICS RELIABILITY, 84: 105-111, MAY 2018, IF: 1.483, Q3, SCI: WOS:000431939000012,DOI: 10.1016/j.microrel.2018.03.007

30.    Y.Y. Fan, X.D. Cai, C.H. He, et al. On-Orbit Single Event Effect of the Digital Signal Processor of the Alpha Magnetic Spectrometer and Discrepancy Analysis for the Rate Prediction [J]. IEEE Transactions on Nuclear Science, 2018, 65(5): 1-7, IF: 1.455, Q2,SCI: WOS: 000432470500008, DOI: 10.1109/TNS.2018.2826538

31.    Xu, Mengxuan; Chen, Liang; Yao, Zhiming;He Chaohui; Transient Radiation Imaging Based on a ZnO:Ga Single-Crystal Image Converter. SCIENTIFIC REPORTS, 8: 4178, MAR 8 2018, IF: 4.525, Q1, SCI: WOS:000426825900013, DOI: 10.1038/s41598-018-22615-z

32.    Liu, W. B.; Zhang, J. H.; Ji, Y. Z.;He, C.H.; Comparative study of He bubble formation in nanostructured reduced activation steel and its coarsen-grained counterpart, JOURNAL OF NUCLEAR MATERIALS, 500: 213-219, MAR 2018, IF: 2.547,Q1, SCI: WOS: 000425108100024,DOI: 10.1016/j.jnucmat.2017.12.041

33.    Du, Xiaozhi, Luo, Dongyang, Shi, Kailun, He, Chaohui, Liu, Shuhuan. FFI4SoC: a Fine-Grained Fault Injection Framework for Assessing Reliability against Soft Error in SoC. JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, FEB 2018,34(1): 15-25, IF: 0.676,Q4, SCI: WOS:000426794800003,DOI: 10.1007/s10836-017-5702-9

34.    Zang, Hang; Cao, Xing-Qing; He, Chao-Hui; Evaluation of interfacial properties in SiC composites using an improved cohesive element method. NUCLEAR SCIENCE AND TECHNIQUES, 29(2): 25, FEB 2018, IF: 0.961,Q3, SCI: WOS:000427326900009, DOI: 10.1007/s41365-018-0365-5

35.    Weitao Yang, Xuecheng Du, Chaohui He, Shuting Shi, Li Cai, Ning Hui, Gang Guo, and Chengliang Huang. Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip. IEEE Transactions on Nuclear Science, 2018, 65(1): 545-549. IF: 1.455, Q2, SCI: WOS:000422922000005,DOI: 10.1109/TNS.2017.2776244

36.    Khan Waseem, Zhang Qingmin, He Chaohui, Saleh Muhammad. Monte Carlo simulation of the full energy peak efficiency of an HPGe detector. APPLIED RADIATION AND ISOTOPES, JAN 2018,131:67-70, IF:1.343,Q2, SCI:WOS:000419421300011, DOI:10.1016/j. apradiso.2017.11.018

37.    Zhang, Jinxin; Guo, Hongxia; Zhang, Fengqi;He Chaohui; Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor. SCIENCE CHINA-INFORMATION SCIENCES, 60(12): 120404, DEC 2017, IF: 2.731,Q2,SCI: WOS:000419034600014,DOI: 10.1007/s11432-017-9249-6

38.    Li Pei, He Chao-Hui*, Guo Gang, Guo Hong-Xia,Zhang Feng-Qi Zhang Jin-Xin.Heavy Ion and Laser Micro-beam Induced Current Transients in SiGe Hetero-junction Bipolar Transistor. Chin. Phys. Lett, 2017, 34(10): 108501,IF: 1.066, Q2, SCI: WOS:000423242200024, DOI: 10.1088/0256-307X/34/10/108501

39.    Liu, Shuhuan; Du, Xuecheng; Du, Xiaozhi;He Chaohui; Primary investigation the impacts of the external memory (DDR3) failures on the performance of Xilinx Zynq-7010 SoC based system (MicroZed) using laser irradiation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 406: 449-455, SEP 1 2017,IF: 1.255,Q3,SCI: WOS:000407659500010, DOI: 10.1016/j.nimb.2017.04.053

40.    Pei Li, Mo-Han Liu, Chao-Hui He*, Hong-Xia Guo, Jin-Xin Zhang, and Ting Ma. An Investigation of Ionizing Radiation Damage in Different SiGe Processes. Chin. Phys. B, 26(8): 088503-1-6, 2017, IF: 1.469,Q3, SCI: WOS:000407024700003, DOI: 10.1088/1674-1056/26/8/088503

41.    Zhang, Jin-Xin; He, Chao-Hui*; Guo, Hong-Xia; Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor. CHINESE PHYSICS B, 26(8): 088502, AUG 2017, IF: 1.469,Q3, SCI: WOS:000407024700002,DOI: 10.1088/1674-1056/26/8/088502

42.    Zong, Pengfei; Cao, Duanlin; Cheng, Yuan;He Chaohui; Functionally reduced graphene oxide supported iron oxides composites as an adsorbent for the immobilization of uranium ions from aqueous solutions. JOURNAL OF MOLECULAR LIQUIDS, 240: 578-588, AUG 2017, IF: 4.561,Q1, SCI: WOS:000407654700064,DOI: 10.1016/j.molliq.2017.05.101

43.    Bo, Tao; Lan, Jian-Hui; Zhao, Yao-Lin;He Chaohui; First-principles study of water reacting with the (110) surface of uranium mononitride. JOURNAL OF NUCLEAR MATERIALS,492: 244-25, AUG 2017, IF: 2.536, Q1, SCI: WOS:000404701300032, DOI: 10.1016/j.jnucmat.2017.05.026

44.    Pei Li, Chaohui He, Hongxia Guo, Qi Guo, Jinxin Zhang, and Mohan Liu. An Investigation of ELDRS in Different SiGe Processes. IEEE Transactions on Nuclear Science, 2017, 64(5): 1137-1141, IF: 1.455,Q2, SCI: WOS:000401949800005, DOI: 10.1109/TNS.2017.2686429

45.    Xuecheng Du, Shuhuan Liu, Dongyang Luo, Yao Zhang, Xiaozhi Du, Chaohui He, Xiaotang Ren,Weitao Yang, Yuan Yuan. Single event effects sensitivity of low energy proton in Xilinx Zynq-7010 System-on-Chip[J]. Microelectronics Reliability, 2017, 71:65~70 (SCI: ES4OP), IF: 1.447, Q3, SCI: WOS:000399514900009,DOI: 10.1016/j.microrel.2017.02.014

46.    Zong, Pengfei; Cao, Duanlin; Wang, Shoufang; He Chaohui; Synthesis of Fe3O4/CD magnetic nanocomposite via low temperature plasma technique with high enrichment of Ni(II) from aqueous solution. JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS, 70: 134-140, JAN 2017, IF: 3.763,Q1, SCI: WOS:000393002600016, DOI: 10.1016/j.jtice.2016.10.022

47.    Zhao Wen; He Chaohui; Chen Wei; Single Event Effect Characteristics Analysis of Typical Circuit Elements in Spacecraft Power Systems. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON NUCLEAR ENGINEERING, 2017, VOL 7: V007T10A035, SCI: WOS:000426020600035

48.    Wang SanBing; Xie Qilin; He ChaoHui. Application of The Burnable Poison in The Design of Space Nuclear Reactor. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON NUCLEAR ENGINEERING, 2017, VOL 3: UNSP V003T13A006, SCI: WOS:000426020100071

49.    Xuecheng Du, Chaohui He*, Shuhuan Liu, Yao Zhang, Yonghong Li and Weitao Yang. Measurement of single event effects induced by alpha particles in the Xilinx Zynq-7010 System-on-Chip[J], Journal of Nuclear Science and Technology, 2017, 54(3):287~292, IF: 1.246, Q2, SCI: WOS:000394716500003,DOI: 10.1080/00223131.2016.1262294

50.    Liu Shuhuan, Du Xuecheng, Du Xiaozhi, Zhang Yao, Mubashiru Lawal Olarewaju,  Luo Dongyang,   Yuan Yuan,  Deng Tianxiang, Li Zhuoqi, Zang Hang,  Li Yonghong, He Chaohui, Ma Yingqi, Shangguan Shipeng. Primary investigation the impact of external memory(DDR3) failure on the performance of Xilinx Zynq-7010 SoC based system(Microzed) using laser irradiation. Nucl. Instr. And Meth. B, 406 (2017) 449–455,IF: 1.255,Q3.

51.    马婷,张晋新,贺朝会等.不同偏置影响SiGe HBT剂量率效应数值模拟[J].原子能科学技术,201751(3)549-554.

52.    何博文,贺朝会,申帅帅,陈袁妙梁. 质子在氮化镓中产生位移损伤的Geant4模拟,原子能科学技术,201751(3)543-548.

53.    杨卫涛, 贺朝会, 杜雪成,. 片上存储器单粒子翻转效应诊断及修复[J]. 核电子学与探测技术, 2017, 37(2): 138-141

54.    杜雪成, 贺朝会, 刘书焕,李永宏. 28nm Xilinx Zynq-7000系统芯片单粒子效应研究进展[J].现代应用物理,201782):1-6.

55.    Chaohui He*, Xuecheng Du, Shuhuan Liu, Yao Zhang, Yonghong Li, Weitao Yang, et al. Study on Single Event Effects in 28nm System-on-Chip[C]. 2017 International Workshop on Reliability and Radiation Effects of Micro-and Nano-Electronic Devices, 2017.

56.    Weitao Yang, Chaohui He, Xuecheng Du, et al. A SEU Diagnosis and Recovery System for OCM in Xilinx 28-nm System-On-Chip 2017[C]. International Workshop on Reliability and Radiation Effects of Micro-and Nano-Electronic Devices, 2017.

57.    WT. Yang, X. Du, J. Guo, et al. Preliminary SEE Distribution Investigation on 28 nm SoC Using Heavy Ion Microbeam[C]. 23rd International Conference on Ion Beam Analysis. 2017

58.    J.M. Kebwaro, C.H. He, Y.L. Zhao. Reproducibility of (n,c) gamma ray spectrum in Pb under different ENDF/B releases. Nuclear Instruments and Methods in Physics Research B 373 (2016) 1–4. SCI: WOS:000374364900001,DOI: 10.1016/j.nimb.2016.02.028

59.    Li, Kui; Zhao, Yaolin; Zhang, Peng;He Chaohui; Combined DFT and XPS investigation of iodine anions adsorption on the sulfur terminated (001) chalcopyrite surface.  APPLIED SURFACE SCIENCE,390: 412-421, DEC 30 2016, IF:4.281,Q1,SCI: WOS:000385900700052, DOI: 10.1016/j.apsusc.2016.08.095

60.    LI Kui, ZHAO Yao-Lin, DENG Jia, HE Chao-Hui, DING Shu-Jiang, SHI Wei-Qun. Adsorption of Radioiodine on Cu2O Surfaces: a First-Principles Density Functional Study[J]. Acta Phys. -Chim. Sin., 2016,32 (9): 2264-2270. DOI: 10.3866/PKU.WHXB201606141.

61.    唐杜, 贺朝会*, 臧航, 李永宏, 熊涔, 张晋新, 张鹏, 谭鹏康. 硅单粒子位移损伤多尺度模拟研究[J]. 物理学报, 2016, 65(8): 084209. WOS:000380363400024. DOI: 10.7498/aps.65.084209

62.    唐杜,贺朝会,熊涔,张晋新,臧航,李永宏,张鹏,谭鹏康. 超低泄漏电流二极管单粒子位移损伤电流计算[J]. 强激光与粒子束, 2016, 28(02): 28026001.

63.    Du Tang, Ignacio Martin-Bragado, Chaohui He*,Hang Zang, Cen Xiong, Yonghong Li,Daxi Guo, Peng Zhang, Jinxin Zhang. Time dependent modeling of single particle displacement damage in silicon devices. Microelectronics Reliability. Volume 60, May 2016, Pages 2532. WOS:000375516200005. DOI: 10.1016/j.microrel.2016.03.004

64.    Jinxin Zhang, Qi Guo, Hongxia Guo, Wu Lu, Chaohui He*, Xin Wang, Pei Li, and Mohan Liu. Impact of Bias Conditions on Total Ionizing Dose Effects of 60 Co γ in SiGe HBT. IEEE Transactions  on Nuclear  Science, 2016,  63(2): 1251-1258, SCI: WOS: 000375035800021, DOI: 10.1109/TNS.2016.2522158

65.    Guo Daxi, He Chaohui*, Zang Hang, Zhang Peng, Ma Li, Li Tao, Cao Xingqing. Re-evaluation of neutron displacement cross sections for silicon carbide by a Monte Carlo approach, JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2016532):161-172, SCI:WOS:000366209900002.DOI: 10.1080/00223131.2015.1028502

66.    Xuecheng Du, Chaohui He, Shuhuan Liu, Yao Zhang, Yonghong Li, CengXiong, PengkangTan. Soft error evaluation and vulnerability analysis in Xilinx Zynq-7010. Nuclear Instruments and Methods in Physics Research A. 831 (2016) 344–348. DOI: 10.1016/j.nima.2016.04.046, WOS:000382255800061.

67.    Zhang Y, Liu SH, Du XC, at al. Primary single event effect studies on Xilinx 28-nm System-on-Chip (SoC)[J]. Nucl. Instr. And Meth. A,NL., 2016, 831:339~343, (SCI: DU5MM).

68.    Yang WT, He CH, Du XC, et al. Design and simulation of SET and radiation-Harden on PLL[C], Proceeding of 2016 IEEE Advanced Information Management, Communicates, Electronic and Automation Control Conference, 2016: 1457~1461, (EI: 20171403534514).

69.    Cen Xiong, Yonghong Li, Shuhuan Liu, Du Tang, Jinxin Zhang, Chaohui He. Hot carrier effect on a single SiGe HBT's EMI response.       Microelectronics Reliability       2015,55(12): 2627-2633, 2015.12, SCI:WOS:000367773300003,DOI: 10.1016/j.microrel.2015.09.002

70.    Cen Xiong, Shuhuan Liu, Yonghong Li, Du Tang, Jinxin Zhang, Xuecheng Du, Chaohui He. Hot carrier effect on the bipolar transistors’ response to electromagnetic interference. Microelectronics Reliability   2015,55(3-4);514-519        2015.2     CD2PC

71.    Zhang Jin-xin, He Chao-hui, Guo Hong-xia, Tang Du, Xiong Cen, Li Pei, Wang Xin. 3-D simulation study of single event effects of SiGe heterojunctionbipolar transistor in extreme environment. Microelectronics Reliability, 2015,55(8),1180-1186 2015.7.15        CQ8OH

72.    Wang SB, He CH. Advanced space nuclear reactor with inherent submersion safety. Journal of Nuclear Science and Technology, 2015, 52(12):1504-1511,SCI: WOS:000362845300006, DOI: 10.1080/00223131.2015.1015466

73.    Jeremiah Monari Kebwaro, Yaolin Zhao, Chaohui He.  Investigation of photoneutron and capture gamma-ray production in Pb and W under irradiation from 16N decay radiation. Nuclear Instruments and Methods in Physics Research B,        2015,328:32-37,2015.09.01,CO5AA

74.    Jianqi Xi, Peng Zhang, Chaohui He,Hang Zang, Daxi Guo, Tao Li. The role of point defects in the swelling and elastic modulus of irradiated cubic silicon carbide. Nuclear Instruments and Methods in Physics Research B, 2015,356-357: 62–68

75.    Daxi Guo, Hang Zang, Chaohui He et al. Preliminary studies on the emulation of 14MeV neutron irradiation in SiC with heavy ions. Fusion Engineering and Design, 2015, 100: 274–279       2015.7.10, SCI: WOS:000365055600032 DOI: 10.1016/j.fusengdes.2015.06.085

76.    Yaolin Zhao,Xianghai Zhao,Jia Deng,Chaohui He. Utilization of chitosan–clinoptilolite composite for the removal of radiocobalt from aqueous solution: kinetics and thermodynamics. Journal of Radioanalytical and Nuclear Chemistry, 2015.9.26, DOI:10.1007/s10967 -014-3327-3

77.    Yaolin Zhao, Baofeng Fu, Tao Wu , Xiaoyuan Han , Hai Chaohui He, Yong Luo, Kui Li, Kai Zhang, Jia Deng. Transport of 125I in compacted GMZ bentonite containing Fe-oxides, Fe-minerals or Cu2O. Journal of Radioanalytical and Nuclear Chemistry, 2015.6.18     DOI 10.1007/s10967-015-4430-9

78.    Jeremiah Monari Kebwaro, Yaolin Zhao, Chaohui He.  Design and optimization of HPLWR high pressure Turbine gammaray shield Nuclear Engineering and Design, 2015, 284: 293-299        2015.04.01        WOS:000351966800032    IDS : CE6RW

79.    Yaolin Zhao,Pengfei Zong, Yonghong Li,Kui Li, Xianghai Zhao, Hai Wang,Shuhuan Liu, Yubing Sun, Chaohui He. Fabrication of oxidized multiwalled carbon nanotubes for the immobilization of U(VI) from aqueous solutions. Journal of Radioanalytical and Nuclear Chemistry, 2015.4.1     DOI: 10.1007/s10967-015-4015-7

80.    赵耀林,王海,罗勇,富宝峰,伍涛,贺朝会. 腐殖酸对Re()在高庙子膨润土中扩散的影响研究.原子能科学技术,  2015,49(6):979-983, 2015.06

81.    Du XC, He CH, Liu SH, et al. Software injection technique for single event effect in embedded system-on chip[C]. International Conference on Radiation Effects of Electronic Devices, Harbin, China, October, 2015

82.    Daxi Guo, Hang Zang, Peng Zhang, Jianqi Xi,Tao Li, Li Ma, Chaohui He, Analysis of primary damage in silicon carbide under fusion and fission neutron spectraJournal of Nuclear Materials 12/2014 455(s 1–3):229–233

83.    Daxi Guo, Ignacio Martin-Bragado, Chaohui He et al. Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation [J]. Journal of Applied Physics, 2014, 116: 204901 (SCI: AU5IM)

84.    Tang Du, He Chaohui*, Li Yonghong, Zang Hang, Xiong Cen, Zhang Jinxin. Soft error reliability in advanced CMOS technologies—Trends and challenges, SCIENCE CHINA-TECHNOLOGICAL SCIENCES,2014, Volume 57(9): 1846–1857

85.    Jianqi Xi, Peng Zhang, Chaohui He, Mingjie Zheng, Hang Zang, Daxi Guo et al. Evolution of defects and defect clusters in β-SiC irradiated at high temperature [J]. Fusion Science and Technology, 2014, 66: 235-244 (SCI: AN1MX)

86.    Zhang Y, Du X, Du XC, et al. Primary total ionizing dose effect studies on Xilinx SoC irradiated with 60Coγ rays[J]. Applied Mechanics and Materials, 2014, 678:252~259 (EI: 20150300431214).

87.    Maoyi Luo, Xiaolin Hou, Chaohui He, Qi Liu, and Yukun Fan. Speciation Analysis of 129I in Seawater by Carrier-Free AgI –AgCl Coprecipitation and Accelerator Mass Spectrometric Measurement, Analytical Chemistry, 2013, 85 (7): 3715-3722,SCI: WOS: 000317173200038;IDS:120MA

88.    WANG SanBing, HE ChaoHui*. Weight control in design of space nuclear reactor system, SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2013, 56(10): 2594-2598,SCI: WOS:000325125700028;IDS:227PL

89.    Pengfei Zong, Shoufang Wang, Chaohui He*. Synthesis of kaolinite/iron oxide magnetic composites and their use in the removal of Cd(II) from aqueous solutions. Water Science and Technology, 2013677):1642-1649, SCI: WOS:000317587800029IDS:126CB

90.    Hang Zang, Tao Yang, Daxi Guo, Jianqi Xi, Chaohui He*, Zhiguang Wang, Tielong Shen, Lilong Pang, Cunfeng Yao, Peng Zhang. Modifications of SiC under high fluence Kr-ion irradiation at different temperatures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013,307558-561, SCI: WOS: 000321722200123IDS:182DP

91.    Pengfei Zong, Shoufang Wang, Yaolin Zhao, Hai Wang, Hui Pan, Chaohui He*. Synthesis and application of magnetic graphene/iron oxides composite for the removal of U(VI) from aqueous solutions. Chemical Engineering Journal, Volume 220, 15 March 2013, Pages 45–52, SCI: WOS:000317541200006;IDS:125LL175 Citations

92.    Du Tang, YongHong Li, GuoHe Zhang, ChaoHui He*, YunYun Fan.Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM. Science China Technological Sciences, March 2013, Volume 56, Issue 3, pp 780-785,SCI: WOS:000314913900037;IDS:089ME

93.    Pengfei Zong, Hai Wang, Hui Pan,Yaolin Zhao, Chaohui He*. Application of NKF-6 zeolite for the removal of U(VI) from aqueous solution.Journal of Radioanalytical and Nuclear Chemistry, Volume 295, Issue 3 (2013), Page 1969-1979,SCI: WOS:000314895400049; IDS: 089FJ

94.    Pengfei Zong, Hai Wang, Hui Pan, Chaohui He*.Investigation of sequestration mechanisms of radionuclide 63Ni(II) on kaolinite in aqueous solutions has now been published in the following paginated issue of Journal of Radioanalytical and Nuclear Chemistry,Volume 295, Issue 1 (2013), Page 405-413,SCI: WOS:000312784200054;IDS:060NE

95.    Maoyi Luo, Xiaolin Hou, Weijian Zhou, Chaohui He, Ning Chen, Qi Liu, Luoyuan Zhang. Speciation and migration of 129I in soil profiles. Journal of Environmental Radioactivity, 2013, 118: 30-39,SCI: WOS:000315839000005IDS:102IT

96.    Weijian Zhou, Ning Chen, XiaolinHou, Luyuan Zhang, Qi Liu, Chaohui He, Yukun Fan, MaoyiLuo, Yaolin Zhao, Zhiwen Wang. Analysis and environmental application of 129I at the Xi’an Accelerator Mass Spectrometry Center. Nuclear Instruments and Methods in Physics Research B, 2013,294:147–151

97.    Hang Zang, Daxi Guo, Tielong Shen, Chaohui He*, Zhiguang Wang, Lilong Pang, Cunfeng Yao, Tao Yang. Investigation of Swelling Induced by Heavy Ion and Neutron Irradiation in SiC. Journal of Nuclear Materials, 2013,433(1-3):378–381,SCI: WOS:000316153800048IDS:106OG

98.    Jianqi Xi, Chaohui He, Hang Zang, Daxi Guo et al. Evolution of atoms with special coordination number in β-SiC with temperature [J]. Journal of Nuclear Materials, 2013, 435: 236-240(SCI: 115QV)

99.    Pengfei Zong, Zhiqiang Guo, Chaohui He*, Yaolin Zhao, Shuhuan Liu, Hai Wang and Hui Pan. Impact of environmental conditions on the sequestration of radionuclide 60Co(II) at Ca-rectorite/water interface. Journal of Radioanalytical and Nuclear Chemistry, 2012,293(1): 289-297, DOI: 10.1007/s10967-012-1758-2; SCI: 958HW

100.  Peng Zhang, Yong Lu, Chao-hui He, Ping Zhang. First-principles study of the incorporation and diffusion of helium in cubic zirconia. Journal of Nuclear Materials, vol.50, pp. 3297-3302, 2011. doi:10.1016/j.jnucmat. 2011.06.025SCI850XS

101.  Peng Zhang, Shuang-Xi Wang, Jian Zhao, Chao-Hui He, Ping Zhang. First-principles study of H2 adsorption and dissociation on Zr0001. Journal of Nuclear Materials. doi:10.1016/j.jnucmat. 2011.06.029SCI850XS

102.  Peng Zhang; Bao-tian Wang; Chao-Hui He; Ping ZhangFirst-principles study of ground state properties of ZrH2, Computational Materials Science. doi:10.1016/j.commatsci. 2011.06.016SCI825AA

103.  Chaohui He, Xiaolin Hou,Yaolin Zhao et.al., 129I Level in Seawater near a Nuclear Power Plant Determined by Accelerator Mass Spectrometer, Nuclear Instruments and Methods in Physics Research A 632 (2011) 152-156, doi: 10.1016/j.nima.2010.12.182SCI730QLEI2011051364138015 Citations

104.  杨莹,王三丙,贺朝会. 压水堆中嬗变99Tc129I的计算研究[J]. 原子能科学技术, 2013, 47(11): 2077-2084.EI: 20135017089057

105.  郭达禧,贺朝会,臧航,席建琦,马梨,杨涛,张鹏. Geant4模拟中子在碳化硅中产生的位移损伤[J]. 原子能科学技术, 2013, 47(7): 1222-1228. EI20133516679425

106.  Jianqi Xi, Peng Zhang, Chaohui He, Hang Zang, Daxi Guo, Li Ma. Evolution of defects and defect clusters in β-SiC irradiated at high temperature. 16th  International Conference on Fusion Reactor Materials,Oct. 20-26,2013, Beijing

107.  Daxi Guo, Hang Zang, Tao Li, Jianqi Xi, Peng Zhang,Tao Yang,Chaohui He. Damage Production in Silicon Carbide in Fission and Fusion Spectra. 16th  International Conference on Fusion Reactor Materials, Oct. 20-26,2013, Beijing

108.  Hang Zang, Tao Li,Chaohui He, Daxi Guo, Jianqi Xi,  Zhiguang Wang, Tielong Shen, Lilong Pang, Cunfeng Yao. Structure and Optical Property Modifications of SiC under 1.5MeV Si Irradiated at RT and 800. 16th  International Conference on Fusion Reactor Materials, Oct. 20-26,2013, Beijing

109.  Maoyi Luo , Xiaolin Hou, Chaohui He, Yaolin Zhao. Speciation Analysis of 129I in Seawater by Carrier-free AgI-AgCl Coprecipitation and AMS Measurement. The 5th East Asia AMS Symposium, Oct. 15-18,2013, Korea

110.  Kui Li, Yaolin Zhao, Chaohui He. A First-principles Study of Radioiodine Adsorption on Cu2O (110): CuO Surface. The 4th East Asia Forum on Radwaste Management, Oct. 14-16,2013,Beijing

111.  Jianqi Xi, Chaohui He, Peng Zhang, Hang Zang, Daxi Guo, Li Ma. Evolution of Defect and Defect Morphology in β-SiC Irradiated at Very High Temperature. 6th Joint International Symposium on Nuclear Science and Technology SJTU-UT-XJTU Joint Workshop, Aug. 11-14,2013, Shanghai

112.  Kui Li, Yaolin Zhao, Peng Zhang, Chaohui He. First-principles Study of Radioiodine Adsorption on Cu2O (111) Surface. 6th Joint International Symposium on Nuclear Science and Technology SJTU-UT-XJTU Joint Workshop, Aug. 11-14,2013, Shanghai

113.  刘书焕,张鑫,王三丙,赵耀林,贺朝会,吴岳雷,陈伟. Primary Simulation The Yield Of 14c Produced In Pwr During Normal Operation. 21st International Conference on Nuclear Engineering, 2013729-82, 成都

114.  罗茂益,侯小琳,贺朝会,赵耀林. 海水129I无载体AgI-AgCl共沉淀形态分析和加速器质谱测量方法. 第二届全国核化学与放射化学青年学术研讨会, 2013118-12, 杭州

115.  王海,贺朝会,伍涛,赵耀林,李金英. 有机和无机改性膨润土对硒的吸附. 中国核学会2013年学术年会, 2013910-13, 哈尔滨

116.  张璐,贺朝会,陈亮等. 闪烁体薄膜在线测量质子束流强度[J].核技术,2012,35(1): 21-25

117.  王三丙,贺朝会. 外中子源驱动式核电源, 核技术, 2011,(4):313-316

118.  胡志良,贺朝会,张国和,郭达禧. 超深亚微米SOI NMOSFET中子位移损伤数值模拟[J]. 原子能科学技术, 2011,45(4):456-460EI20112714112744

119.  胡志良,贺朝会.4H-SiC NMOS电子、质子辐照数值模拟[J]. 强激光与粒子束, 2011,23(4):1-4EI20112314043864

120.  胡志良,贺朝会工艺参数对SOI NMOS总剂量效应的影响,核技术,201033(10)779-782

121.  张园园,赵耀林,张国和,贺朝会.埋氧层陷阱电荷对深亚微米SOI NMOSFETs重离子单粒子效应的影响[J/OL].中国科技论文在线,2012http://www.paper.edu.cn/index.php /default/releasepaper/content/201201-434

122.  Li Yonghong, He Chaohui,Xia chunmei, Simulation of Heavy Ion Source-Drain Penetration Effect in SOI MOS and bulk MOS, Proceedings of the 18th International Conference on Nuclear Engineering(ICONE18-29782) May 17-21, 2010, Xi'an, ChinaEI20114014385924

123.  Zhiwen Wang, Chaohui He, Huaibin Li, et al., Measurement of 129I level around a Nuclear Power Plant by Accelerator Mass Spectrometer , Proceedings of the 18th International Conference on Nuclear Engineering(ICONE18-29976) May 17-21, 2010, Xi'an, ChinaEI20114014385984

124.  李永宏, 赵耀林, 唐杜, 贺朝会.130 nm 体硅SRAMSOI SRAM器件单粒子翻转3D模拟与分析[J/OL].中国科技论文在线, http://www.paper.edu.cn/index.php/default/ releasepaper/content/201201-860.

125.  彭振驯 张鹏 贺朝会,一种复合型核电池的理论设计,核技术2010 33(4)308-311

126.  W.J.Zhou, X.L.Hou, N. Chen, L.Y.Zhang, Q.Liu, C.H.He,etc. Preliminary study of radioisotope 129I application in China using Xi’an Accelerator Mass Spectrometer, INCS News,25th Issue,Volume VII, No.1:8-23, 2010.

127.  李永宏,贺朝会,周辉. 应用锎源实验结果预估空间轨道单粒子翻转率.原子能科学技术, 2009,43(11)1029-1033. EI:20095012535841

128.  Zhiwen Wang, Huaibin Li, Chaohui He,Ning Chen, Qi Liu, Luyuan Zhang, Maoyi Luo,Yukun Fan, Wangguo Liang ,Yunchong Fu. Measurement of 129I in Seawater near a Nuclear Power Plant by Accelerator Mass Spectrometer. The 3rd East Asian Symposium on Accelerator Mass Spectrometry, October 19-22, 2009, Xi'an, China

129.  He Chaohui, Zhao Yaolin, Wang Haifeng et al., Xi’an Accelerator Mass Spectrometer and its Application in the Measurement of Iodine Isotope in Seawater. 2nd Joint International Symposium on Nuclear Science and Technology. Tokai, Japan, March 21-23, 2009

130.  Li Yonghong, He Chaohui, Zhao Fazhan,Guo Tianlei, Liu Gang, Han Zhengsheng, Liu Jie, Guo Gang, Experimental study on heavy ion single event effects in SOI SRAMs. Nucl. Instr. And Meth. B267(1):83-86,2009, doi:10.1016/j.nimb. 2008.10.082/. SCI: 408SF; EI:20090411876774

131.  任学明,贺朝会.空间轨道单粒子翻转率预估的小样本法[J].原子能科学技术,2009,43(2)165-169. EI:20091412017512

132.  张鹏,贺朝会.次临界裂变热源与同位素衰变热源比较分析.中国核学会2009年学术年会,2009111720日,北京

133.  彭振驯 张鹏 贺朝会,一种复合型同位素电池的理论设计 [J/OL]. 中国科技论文在线,http://www.paper.edu.cn/paper.php?serial_number=200904-555,第二届全国核技术及应用研究学术研讨会,绵阳,2009518-23

134.  王海峰,李怀斌,赵耀林,贺朝会.加速器质谱法测定核电站排水口水样中的129I[J/OL]. 中国科技论文在线,http://www.paper.edu.cn/paper.php?serial_number=200809-818;第四届全国环境放射化学会议学术研讨会,2009511-15日,西安,陕西

135.  夏春梅, 贺朝会. MOSFET重离子源漏穿通效应的二维数值模拟[J/OL]. 中国科技论文在线,http://www.paper.edu.cn/paper.php?serial_number=200804-912

136.  He Chao-Hui, Li Yong-Hong. Progress in Single Event Effects Simulation Experiments in XJTU. 1st Joint International Symposium on Nuclear Science and Technology. Xi’an, China, March 17-19, 2008

137.  李永宏,贺朝会. 80C196单粒子效应测试系统[J/OL].中国科技论文在线, http://www. paper.edu.cn/paper.php?serial_number=200703-520

138.  He Chao-Hui, Li Yong-Hong. Experimental study on radiation effects in floating gate read-only-memories and static random access memories. Chinese Physics,2007,16(9):2773 -2778收录号:SCI: 209MM

139.  贺朝会,李永宏,杨海亮.单粒子效应辐射模拟实验研究进展.核技术,200730(4): 347-351,收录号:EI20072010603516

140.  何宝平,周荷琴,郭红霞,贺朝会,周辉,李永宏,CMOS器件总剂量效应的理论模拟,原子能科学技术,2006404):486-489收录号:EI 064310200569

141.  贺朝会,杨秀培,张卫卫等.应用α源评估静态存储器的软错误.原子能科学技术,200640(Suppl.):192-195,收录号:EI 064910289091

142.  贺朝会,郭刚,李永宏等. SRAM重离子微束单粒子效应实验研究. 科技导报社.中国科协2005年学术年会论文集:以科学发展观促进科技创新(中).北京:中国科学技术出版社,2005662667

143.  贺朝会,耿斌,李永宏等,大规模集成电路单粒子闭锁测试系统,核电子学与探测技术, 25(6): 724-7282005收录号:EI 05519605763

144.  李永宏,贺朝会,杨海亮等,可编程逻辑器件在存储器辐射效应测试系统中的应用,核电子学与探测技术, 25(5): 559-562, 2005收录号:EI 05449454198

145.  He Chaohui, Li Yonghong, Geng Bin et al., Mechanisms of Radiation Effects in Floating Gate ROMs, International Radiation Physics Society Workshop on Frontier Research in Radiation Physics and Related Areas, pp83-87, Chengdu, China, 10-14 November 2004 Sichuan University

146.  贺朝会,耿斌,黄芳等,真空和辐射环境下的高低温系统,核电子学与探测技术,24(3): 272-274,2004收录号:EI 04318296988

147.  贺朝会,耿斌,姚育娟等,大规模集成电路总剂量效应测试方法初探,物理学报,53(1): 194-195,2004,收录号:SCI: 765LR,被他引6

148.  贺朝会,耿斌,王燕萍等,浮栅ROM器件辐射损伤机理分析,物理学报,52(9)2235- 2238,2003,收录号:SCI: 720AE,被他引2

149.  贺朝会,耿斌,杨海亮等,浮栅ROMSRAM抗辐射性能比较分析,电子学报,31(8):1260 -1262,2003收录号:EI4108052713

150.  贺朝会,耿斌,王燕萍等,浮栅ROM器件的辐射效应实验研究,物理学报,52(1)180- 187,2003,收录号:SCI: 644KA/INSPEC:7583236,被他引2

151.  郭红霞,韩福斌,陈雨生,周辉,贺朝会,半导体器件硬X射线剂量增强效应研究,核技术,20022510):811-815收录号:EI02497258303

152.  王燕萍,唐本奇,李国政,贺朝会,陈晓华,空间单粒子效应的252Cf辐照模拟测量系统及应用,核技术,2002254):247-250收录号:EI 02397116716 

153.  He Chaohui, Geng Bin, Chen Xiaohua et al., Experimental Study on Irradiation Effects in Floating Gate ROMs, Workshop RADECS(Radiation Effects on Components and Systems) 2002 Conference Proceedings, pp147-150, September 19-20, 2002, Padova University, Padova, Italy

154.  He Chaohui, Chen Xiaohua, Li Guozheng, Simulation Calculation for High Energy Proton Single Event Upset Effects, ICM (International Congress of Mathematicians) 2002-Beijing, Satellite Conference on Scientific Computing (Abstracts), pp33-34, August 15-18, 2002, Xi’an Jiaotong University, Xi’an, China

155.      贺朝会,耿斌,王燕萍等,浮栅ROM器件γ辐射效应实验研究,核电子学与探测技术,22(4):344-347,2002收录号:INIS: 34-032661,被他引2

156.      贺朝会,陈晓华,李国政,高能质子单粒子翻转效应的模拟计算,计算物理19(4)367-371,2002,被他引3

157.      贺朝会,耿斌,王燕萍等,重离子单粒子翻转截面与γ累积剂量的关系研究,核电子学与探测技术,22(3):228-230,2002收录号:EI02397111392/CA138263983/INIS: 33- 061569

158.      贺朝会,耿斌,王燕萍等,静态随机存取存储器重离子单粒子效应实验研究,核电子学与探测技术,22(2):155-157,2002收录号:INIS:33-061548,被他引2

159.      贺朝会,耿斌,陈晓华等,浮栅ROM器件质子辐射效应实验研究,空间科学学报,22(2): 184-192,2002

160.      贺朝会,耿斌,杨海亮等,半导体器件单粒子效应的加速器模拟实验研究,强激光与粒子束,141):1461502002收录号:CA DN 136:393872/INIS:33-027498/INSPEC: 7233685

161.      郭红霞, 陈雨生, 张义门, 韩福斌, 贺朝会, 周辉,浮栅ROM器件X射线剂量增强效应实验研究, 物理学报, 200251 (10): 2315-2319.收录号:SCI: IDS Number: 609JF

162.      杨海亮 李国政 姜景和 贺朝会 陈晓华,热释光剂量计监测质子注量,强激光与粒子束, 2001,13(02)233236

163.      杨海亮,李国政,李原春,姜晶和,贺朝会,唐本奇,中子和质子导致的单粒子效应的等效性的蒙特卡罗模拟,原子能科学技术,2001356):490-495收录号:EI 02216953030

164.      He Chaohui, Yang Hailiang, Geng Bin et al.Experimental Study on Single Event Effects in Semiconductor Devices Using AcceleratorsProceedings of the Second Asian Particle Accelerator Conferencepp923-925, September 17-21, 2001, Beijing, China收录号:INIS:33-023828

165.      贺朝会,空间轨道单粒子翻转率预估方法研究,空间科学学报,21(3):266-273,2001

166.      唐本奇,王燕萍,耿斌,陈晓华,贺朝会,杨海亮,功率MOS 器件单粒子烧毁和栅穿效应的252Cf裂变碎片模拟,原子能科学技术,2000344):339-343收录号:EI 01396661320

167.      陈晓华,贺朝会,姬琳等,80C86单粒子效应测试系统及实验研究,原子能科学技术, 34(4)344-348, 2000收录号:EIP01396661321/INIS: 31-063140,被他引1

168.      贺朝会,陈晓华,李国政,杨海亮,质子单粒子翻转截面计算方法,中国空间科学技术,205):10-162000

169.      贺朝会,杨海亮,耿斌等,静态随机存取存储器质子单粒子效应实验研究,核电子学与探测技术,204):253-2572000,收录号:INIS: 32-009615/EI00115399696

170.      贺朝会,陈晓华,李国政,刘恩科等, FLASH ROM 28F25629C25614MeV中子辐照实验研究,核电子学与探测技术,202):115-1192000,收录号:INIS: 31-051957/ EI00095314093,被他引1

171.      贺朝会,李国政,罗晋生,刘恩科,CMOS SRAM单粒子翻转效应的解析分析,半导体学报,212):174-1782000,被他引2

172.      贺朝会,耿斌,李国政,刘恩科等,pA量级质子束流测量系统,核电子学与探测技术,201):40-422000收录号:CA132299843t/INIS: 31-053455/EI00095312740

173.      贺朝会,陈晓华,刘恩科,李国政等,EEPROM 28C6428C25614MeV中子辐照特性,微电子学,294):262-2661999

174.      贺朝会,李国政,刘恩科,北京正负电子对撞机次级束模拟质子单粒子效应分析,原子能科学技术,332):175-1811999收录号:EI99104807746/CA131205725k/INIS: 30-024774

175.      贺朝会,半导体存储器的单粒子效应研究,西安交通大学博士学位论文,1999

176.      贺朝会,姜景和,李国政,双极晶体管中子辐照效应的计算机模拟,抗核加固,132):73-93,1996

177.      贺朝会,李国政,一个潜在的高能质子源,试验与研究,204):29-35,1997

178.      贺朝会,陈晓华,王燕萍,李国政,14MeV中子辐照FLASH ROM的实验研究,试验与研究,213):29-32,1998/第九届全国核电子学与探测技术学术会议文集,21-26,1998,中国电子学会/中国核学会,大连,辽宁,收录号:INIS: 31-053549

179.      贺朝会,杨海亮,耿斌等,SRAM质子单粒子效应实验研究,第四届卫星抗辐射加固技术学术交流文集:188-194,中国空间技术研究院,1999.9,兰州

180.      贺朝会,陈晓华,李国政等,硅器件高能质子单粒子翻转截面计算方法,第四届卫星抗辐射加固技术学术交流文集:195-201,中国空间技术研究院,1999.9,兰州

181.      贺朝会,李国政, CMOS SRAM单粒子翻转过程中的时间因素,第四届卫星抗辐射加固技术学术交流文集:202-208,中国空间技术研究院,1999.9,兰州

182.      贺朝会 单粒子效应研究的现状和动态,抗核加固,171):82-982000

183.      贺朝会,陈晓华,李国政,高能质子在存储单元灵敏区内沉积能量的模拟计算,第三届计算物理学术会议论文集,197-202,中国计算物理学会,2001.8,乌鲁木齐/高科技研究中的数值计算,第七卷:57-612001,科学与工程计算丛书编辑部

184.      贺朝会,国内单粒子效应实验测试技术分析,第三届全国核仪器应用学术会议论文集:198-202,中国电子学会/中国核学会核电子学与核探测技术分会,2001.9.20-24,广西,桂林

185.      贺朝会,陈晓华,王燕萍等,浮栅ROM器件的14MeV中子辐照特性,第七届全国抗辐射电子学与电磁脉冲学术交流会论文集(第二分册):62-68,中国电子学会/中国核学会核电子学与核探测技术分会,抗辐射电子学与电磁脉冲专业委员会,中国工程物理研究院电子工程研究所,2001.11,重庆

186.      贺朝会,耿斌,陈晓华等,单粒子效应理论与实验研究——卫星抗单粒子效应加固技术研究,“九五”抗辐射加固技术论文集,132-144 2002.10,优秀论文