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论文期刊

论文标题    High-threshold-voltage and low-leakage-current of normally-off H-diamond FET with self-aligned Zr/ZrO2 gate
作者    F Wang, GQ Chen, W Wang, MH Zhang, S He, GQ Shao, YF Wang, WB Hu, HX Wang*
发表/完成日期    2023-03-20
期刊名称    Diamond and Related Materials
期卷    134
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