从事电子发射材料及其应用、真空电子器件、宽禁带半导体材料与器件等相关研究。

● 主持国家重点研发计划课题、国家自然科学基金、装发技术基础项目子课题、国家级重点实验室基金等科研项目7项。

● 目前发表论文30余篇，申请发明专利22项（已授权11项），获2021年第一届全国博士后创新创业大赛优胜奖。

● 指导研究生获2024年第十九届中国研究生电子设计竞赛西北赛区一等奖。

主持纵向科研项目包括：

1. 国家重点研发计划课题，“高增益快速型电子倍增极结构设计”，2021YFF0700602，2021年12月~2024年11月。

2. 国家自然科学基金青年项目，“金属与氧化物共掺杂氧化镁薄膜的电子诱导二次电子发射特性研究”，52002313，2021年1月~2023年12月。

3. 国家级重点实验室基金项目，“纳米非晶碳薄膜抑制二次电子发射的机理及其性能研究”，2020年1月~2021年12月。

参与纵向科研项目包括：

1. 国家自然科学基金重点项目（“叶企孙”科学基金），“电子倍增器二次电子发射薄膜性能衰减机理及抑制方法研究”，U2241207，2023年1月~2026年12月。

2. 国家重点研发计划项目，“质谱仪用分离打拿极电子倍增器研制”，2021YFF0700800，2021年12月~2024年11月。

部分发表学术论文包括：

34. L. Liu, J. Li, B. Liu, T. Wang, H. Liu, X. Yun, S. Wu, W. Hu*, Simulation investigation on the pulse/analog dual-mode electron multiplier with discrete arc-shaped dynodes, Journal of Vacuum Science and Technology B, 2025.

33. L. He*, S. Li, W. Luo, J. Li*, Unprecedented high efficiency of porous silicon-based electron emitter achieved through electrochemical oxidation, IEEE Electron Device Letters, 2025, 46(1): 3505134.

32. J. Yang, J. Li*, W. Zhao, L. He, R. Wang, Y. Zhao, W. Hu, J. Tian, S. Wu*, Enhancement of the gain and stability in a discrete dynode electron multiplier through differential voltage distribution among dynodes, IEEE Transactions on Electron Devices, 2025, 72(1): 3503536.

31. Z. Hou, G. Niu, J. Li, S. Wu*, Improvement of n-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO₂ dielectrics and metal contacts, Nonatechnology, 2025, 36: 065701.

30. Z. Xia, Y. Wang, G. Liu, T. Deng, H. Wang, J. Li, W. Hu, S. Wu*, X. Zhong, Decay of secondary electron yield of MgO-Au composite film at different incident electron energies, Vacuum, 2025, 231: 113789.

29. Y. Su, J. Li*, B. Liu, X. Chu, S. Wu*, W. Hu, G. Liu, T. Deng, H. Wang, Structural modification of MgO/Au thin films by aluminum co-doping and related studies on secondary electron emission, Materials Chemistry and Physics, 2024, 332: 130209.

28. 李娜，刘利，李洁，贠新团，刘虎林，刘碧野，吴胜利，胡文波*，质谱仪用分离打拿极电子倍增器结构优化，真空科学与技术学报，2024（网络首发）．

27. Y. Wang, Z. Xia, S. Wu*, J. Li, Effects of sputtering pressure on microstructure and secondary electron emission properties of AlN film prepared by magnetron sputtering, Materials Letters, 2024, 377: 137319.

26. L. Liu, J. Li, Z. Xia, B. Liu, H. Liu, S. Wu*, W. Hu*, Enhanced secondary electron emission properties of sputter-deposited MgO-Au composite film via Cr doping, Vacuum, 2024, 229: 113545.

25. 丁晓尘，刘国凤，李洁，王浩东，方庆华，一种电子倍增器的设计仿真研究，真空电子技术，2024．

24. 贺峦轩，陈萍*，刘虎林，李洁，田进寿，胡文波，吴胜利，高增益分离打拿极电子倍增器设计，真空电子技术，2024．

23. 杨济世，李洁*，刘国凤，邓涛，王浩东，张杰，侯振非，胡文波，田进寿，吴胜利*，阳极位置和尺寸对侧窗型光电倍增管性能影响的仿真研究，真空电子技术，2024．

22. 甘露，吴胜利*，唐文华，李洁，漏极结构对平面型纳米沟道真空三极管性能影响的模拟研究，真空电子技术，2024．

21. Z. Xia, Y. Wang, X. Z, J. Li, W. Hu, S. Wu*, The grain agglometration in the decay of secondary electron yield induced by electrons, Vacuum, 2024, 227: 113430.

20. Z. Hou, W. Yan, Y. Liu, G. Niu, W. Tang, Y. Sun, J. Li, J. Zhao, Y. Zhao, S. Wu*, The synergistic effect of vertical structural parameters of vertical-type two-dimensional hole gas diamond MOSFETs on improving the overall performance of devices based on TCAD simulation, Diamond and Related Materials, 2024, 146: 111208.

19. B. Liu, J. Li*, S. Chen, J. Yang, W. Hu, J. Tian, S. Wu*, Performance improvement of a discrete dynode electron multiplication system through the optimization of secondary electron emitter and the adoption of double-grid dynode structure, Nuclear Instruments and Methods in Physics Research A, 2024, 1062: 169162.

18. L. Liu, J. Li, K. Ma, B. Liu, Y. Xue, W. Hu*, S. Wu*, H. Fan, Secondary electron emission enhancement of MgO-Au composite film by SiO₂ doping in MgO surface layer, Materials Letters, 2024, 355: 135448.

17. Z. Xia, Y. Wang, Y. Peng, J. Li, W. Hu, X. Zhong, S. Wu*, 3D structure of box-and-grid electron multiplier with high electron collection efficiency, Journal of Vacuum Science and Technology B, 2023, 41: 064205.

16. R. An, J. Zhao, J. Yang, S. Zhai, L. Dai, Q. Wang,  J. Li, W. Hu, G. Sun, Y. Fan, S, Wu, G. Niu*, Accurate and wide-range measurement of thermal conductivity of semiconductor materials by laser-excited RTaman spectroscopy, Journal of Applied Physics, 2023, 134: 015103.

15. Z. Hou, Y. Liu, G. Niu, Y. Sun, J. Li, J. Zhao. S. Wu*, Carbon nanotube network film-based field-effect transistor interface state optimization by ambient air annealing, Journal of Applied Physics, 2023, 133: 125303.

14. 李洁，杨济世，刘虎林，刘碧野，赵源，胡文波，吴胜利*，分离打拿极电子倍增器性能提升技术研究，真空电子技术，2023，01：18-24．

13. 李杨昊，夏章聪，李洁，吴胜利*，胡文波，田进寿，收集极对分离打拿极电子倍增器增益影响的模拟计算，真空电子技术，2022，04：47-51．

12. J. Li, B. Liu, S. Wu, Y. Li, W. Hu*, Electron-induced secondary electron emission of aluminum alloy processed via the combination of alodine treatment and carbon film deposition, Materials Letters, 2022, 327: 133085.

11. L. He, X. He*, J. Li, W. Luo, Q. He, D. Wei, A novel flat electron emission lamp based on the porous silicon ballistic electron emitter, Microporous and Mesoporous Materials, 2021, 312: 110807.

10. R. Wang, Q. Wei, J. Li, J. Fu, Y. Liu, T. Zhu, Y. Cui, G. Niu, S. Wu*, H. Wang*, Effect of HfO₂-based muti-dielectrics on electrical properties of amorphous In-Ga-Zn-O thin film transistors, Coatings, 2021, 11(11): 1381.

9. X. Wang, Z. Shen, J. Li, S. Wu*, Preparation and properties of crystalline IGZO thin films, Membranes, 2021, 11: 134.

8. L. He*, Y. Wang, X. He, J. Li, Q. He, D. Wei, The combined effects of anodization parameters on morphological of theporous silicon and the ballistic electron emission of PS-based emitter, Vacuum, 2020, 171: 108998.

7. B. Liu, J. Li*, S. Wu, W. Hu, M. Zhang, K. Wei, J. Zhang, H. Fan, Secondary electron emission performance of the surface Ni-doped MgO-Au thin film under continuous electron bombardment, Materials Letters, 2020, 278: 128452.

6. L. He*, X. He, J. Li, Improved cold emission property of the multilayer porous silicon by modulating the porosity sequence, Applied Surface Science, 2020, 521: 146392.

5. K. Wei, R. Wang, J. Li, B. Liu, Q. Wei, R. Wu, S. Wu*, W. Hu, H. Wang, Secondary electron emission properties of double-layer B-doped diamond films, Diamond and Related Materials, 2020, 106: 107826.

4. K. Wei, J. Li, B. Liu, Q. Wei, R. Wu, S. Wu*, W. Hu, H. Wang, Effect of hydrogen plasma treatment on secondary electron emission properties of polycrystalline diamond films, Vacuum, 2020, 172: 109046.

3. Y. Pang, W. Zhao, J. Li, Y. Yuan, W. Hu, S. Wu, Y. Li, S, Yang, Electron emission properties of silicon-rich silicon oxide film prepared by reactive magnetron sputtering deposition and rapid thermal annealing, Materials Research, 2020, 23(1): e20190401.

2. J. Li, W. Hu*, L. Hao, B. Gao, S. Wu, J. Zhang, Y. Li, Secondary electron emission enhancement of MgO/Au composite film by adopting a gold buffer layer, Materials Research Bulletin, 2019, 118: 110493.

1. J. Li, X. Yi, W. Hu*, B. Gao, Y. Li, S. Wu, S. Lin, J. Zhang, Substrate temperature dependent microstructure and electron-induced secondary electron emission properties of magnetron sputter-deposited amorphous carbon films, Materials, 2019, 12(16): 2631.