Publications - 潘 杰
（# for equal contribution, * for corrsponding authorship)
2024
1. J. Pan; H. Xie; P. Shi; X. Wang; L. Zhang; Z. Wang*, Berry curvature dipole in bilayer graphene with interlayer sliding. Phys. Rev. B, 109 (7), 075415 (2024).
Before Joining XJTU:
10. You, J.; Pan, J.; Shang, S.-L.; Xu, X.; Liu, Z.; Li, J.; Liu, H.; Kang, T.; Xu, M.; Li, S.; Kong, D.; Wang, W.; Gao, Z.; Zhou, X.; Zhai, T.; Liu, Z.-K.; Kim, J.-K.; Luo, Z., Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior. Nano Lett. 2022, 22 (24), 10167-10175.
9. Zhang, T.; Zhang, H.; Pan, J.; Sheng, P., Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot graphene. New J. Phys. 2022, 24 (11), 113027.
8. Kang, T.; Jin, Z.; Han, X.; Liu, Y.; You, J.; Wong, H.; Liu, H.; Pan, J.; Liu, Z.; Tang, T. W.; Zhang, K.; Wang, J.; Yu, J.; Li, D.; Pan, A.; Pan, D.; Wang, J.; Liu, Y.; Luo, Z., Band Alignment Engineering by Twist Angle and Composition Modulation for Heterobilayer. Small 2022, 18 (29), 2202229.
7. Zhang, B.; Zhang, T.; Pan, J.; Chow, T. P.; Aboalsaud, A. M.; Lai, Z.; Sheng, P., Peierls-type metal-insulator transition in carbon nanostructures. Carbon 2021, 172, 106-111.
6. Pan, J.#; Yeh, S.-S.#; Zhang, H.; Rees, D. G.; Zhang, T.; Zhang, B.; Lin, J.-J.; Sheng, P., Correlation hard gap in antidot graphene. Phys. Rev. B 2021, 103 (23), 235114.
5. Pan, J.; Zhang, T.; Zhang, H.; Zhang, B.; Dong, Z.; Sheng, P., Berry Curvature and Nonlocal Transport Characteristics of Antidot Graphene. Phys. Rev. X 2017, 7 (3), 031043.
4. Abidi, I. H.; Liu, Y.; Pan, J.; Tyagi, A.; Zhuang, M.; Zhang, Q.; Cagang, A. A.; Weng, L.-T.; Sheng, P.; Goddard III, W. A.; Luo, Z., Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil. Adv Funct Mater 2017, 27 (23), 1700121.
3. Wu, R.#; Pan, J.#; Ou, X.; Zhang, Q.; Ding, Y.; Sheng, P.; Luo, Z., Concurrent fast growth of sub-centimeter single-crystal graphene with controlled nucleation density in a confined channel. Nanoscale 2017, 9 (27), 9631-9640.
2. Pan, J.; Zhang, H.; Zheng, Y.; Zhang, B.; Zhang, T.; Sheng, P., Spatial variation of charge carrier density in graphene under a large bias current. Phys. Rev. B 2016, 93 (11), 115424.
1. Lu, J.#; Pan, J.#; Yeh, S.-S.; Zhang, H.; Zheng, Y.; Chen, Q.; Wang, Z.; Zhang, B.; Lin, J.-J.; Sheng, P., Negative correlation between charge carrier density and mobility fluctuations in graphene. Phys. Rev. B 2014, 90 (8), 085434.
2024
4. J. Pan, H. Wang, L. Zou, H. Xie, Y. Ding, Y. Zhang, A. Fang, Z. Wang*, Inducing Berry curvature dipole in multilayer graphene through inhomogeneous interlayer sliding. Physical Review B, 110, 235418 (2024)
3. P. Shi#, X. Wang#, L. Zhang, W. Song, K. Yang, S. Wang, R. Zhang, L. Zhang, T. Taniguchi, K. Watanabe, S. Yang, L. Zhang, L. Wang, W. Shi, J. Pan*, Z. Wang*, Magnetoresistance Oscillations in Vertical Junctions of 2D Antiferromagnetic Semiconductor CrPS4, Physical Review X, 14, 041065 (2024)
2. L. Zhang, X. Wang, Q. Li, H. Xie, L. Zhang, L. Zhang, J. Pan*, Y. Cheng*, Z. Wang*, Bias voltage driven tunneling magnetoresistance polarity reversal in 2D stripy antiferromagnet CrOCl, Applied Physics Letters, 125, 222403 (2024)
1. J. Pan; H. Xie; P. Shi; X. Wang; L. Zhang; Z. Wang*, Berry curvature dipole in bilayer graphene with interlayer sliding. Phys. Rev. B, 109 (7), 075415 (2024).
Before Joining XJTU:
10. You, J.; Pan, J.; Shang, S.-L.; Xu, X.; Liu, Z.; Li, J.; Liu, H.; Kang, T.; Xu, M.; Li, S.; Kong, D.; Wang, W.; Gao, Z.; Zhou, X.; Zhai, T.; Liu, Z.-K.; Kim, J.-K.; Luo, Z., Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior. Nano Lett. 2022, 22 (24), 10167-10175.
9. Zhang, T.; Zhang, H.; Pan, J.; Sheng, P., Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot graphene. New J. Phys. 2022, 24 (11), 113027.
8. Kang, T.; Jin, Z.; Han, X.; Liu, Y.; You, J.; Wong, H.; Liu, H.; Pan, J.; Liu, Z.; Tang, T. W.; Zhang, K.; Wang, J.; Yu, J.; Li, D.; Pan, A.; Pan, D.; Wang, J.; Liu, Y.; Luo, Z., Band Alignment Engineering by Twist Angle and Composition Modulation for Heterobilayer. Small 2022, 18 (29), 2202229.
7. Zhang, B.; Zhang, T.; Pan, J.; Chow, T. P.; Aboalsaud, A. M.; Lai, Z.; Sheng, P., Peierls-type metal-insulator transition in carbon nanostructures. Carbon 2021, 172, 106-111.
6. Pan, J.#; Yeh, S.-S.#; Zhang, H.; Rees, D. G.; Zhang, T.; Zhang, B.; Lin, J.-J.; Sheng, P., Correlation hard gap in antidot graphene. Phys. Rev. B 2021, 103 (23), 235114.
5. Pan, J.; Zhang, T.; Zhang, H.; Zhang, B.; Dong, Z.; Sheng, P., Berry Curvature and Nonlocal Transport Characteristics of Antidot Graphene. Phys. Rev. X 2017, 7 (3), 031043.
4. Abidi, I. H.; Liu, Y.; Pan, J.; Tyagi, A.; Zhuang, M.; Zhang, Q.; Cagang, A. A.; Weng, L.-T.; Sheng, P.; Goddard III, W. A.; Luo, Z., Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil. Adv Funct Mater 2017, 27 (23), 1700121.
3. Wu, R.#; Pan, J.#; Ou, X.; Zhang, Q.; Ding, Y.; Sheng, P.; Luo, Z., Concurrent fast growth of sub-centimeter single-crystal graphene with controlled nucleation density in a confined channel. Nanoscale 2017, 9 (27), 9631-9640.
2. Pan, J.; Zhang, H.; Zheng, Y.; Zhang, B.; Zhang, T.; Sheng, P., Spatial variation of charge carrier density in graphene under a large bias current. Phys. Rev. B 2016, 93 (11), 115424.
1. Lu, J.#; Pan, J.#; Yeh, S.-S.; Zhang, H.; Zheng, Y.; Chen, Q.; Wang, Z.; Zhang, B.; Lin, J.-J.; Sheng, P., Negative correlation between charge carrier density and mobility fluctuations in graphene. Phys. Rev. B 2014, 90 (8), 085434.
