Publications - 潘 杰
（# for equal contribution, * for corresponding authorship)
2025
1. L. Zhang, M. He, X. Wang, H. Zhang, K. Han, Y. Liu, L. Zhang, Y. Cheng, J. Pan*, Z. Qu*, Z. Wang*, Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2. Journal of Physics D: Applied Physics, 58, 105005 (2025)
2024
Before Joining XJTU:
10. You, J.; Pan, J.; Shang, S.-L.; Xu, X.; Liu, Z.; Li, J.; Liu, H.; Kang, T.; Xu, M.; Li, S.; Kong, D.; Wang, W.; Gao, Z.; Zhou, X.; Zhai, T.; Liu, Z.-K.; Kim, J.-K.; Luo, Z., Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior. Nano Letters 2022, 22 (24), 10167-10175.
9. Zhang, T.; Zhang, H.; Pan, J.; Sheng, P., Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot graphene. New Journal of Physics 2022, 24 (11), 113027.
8. Kang, T.; Jin, Z.; Han, X.; Liu, Y.; You, J.; Wong, H.; Liu, H.; Pan, J.; Liu, Z.; Tang, T. W.; Zhang, K.; Wang, J.; Yu, J.; Li, D.; Pan, A.; Pan, D.; Wang, J.; Liu, Y.; Luo, Z., Band Alignment Engineering by Twist Angle and Composition Modulation for Heterobilayer. Small 2022, 18 (29), 2202229.
7. Zhang, B.; Zhang, T.; Pan, J.; Chow, T. P.; Aboalsaud, A. M.; Lai, Z.; Sheng, P., Peierls-type metal-insulator transition in carbon nanostructures. Carbon 2021, 172, 106-111.
6. Pan, J.#; Yeh, S.-S.#; Zhang, H.; Rees, D. G.; Zhang, T.; Zhang, B.; Lin, J.-J.; Sheng, P., Correlation hard gap in antidot graphene. Physical Review B 2021, 103 (23), 235114.
5. Pan, J.; Zhang, T.; Zhang, H.; Zhang, B.; Dong, Z.; Sheng, P., Berry Curvature and Nonlocal Transport Characteristics of Antidot Graphene. Physical Review X 2017, 7 (3), 031043.
4. Abidi, I. H.; Liu, Y.; Pan, J.; Tyagi, A.; Zhuang, M.; Zhang, Q.; Cagang, A. A.; Weng, L.-T.; Sheng, P.; Goddard III, W. A.; Luo, Z., Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil. Advanced Functional Materials 2017, 27 (23), 1700121.
3. Wu, R.#; Pan, J.#; Ou, X.; Zhang, Q.; Ding, Y.; Sheng, P.; Luo, Z., Concurrent fast growth of sub-centimeter single-crystal graphene with controlled nucleation density in a confined channel. Nanoscale 2017, 9 (27), 9631-9640.
2. Pan, J.; Zhang, H.; Zheng, Y.; Zhang, B.; Zhang, T.; Sheng, P., Spatial variation of charge carrier density in graphene under a large bias current. Physical Review B 2016, 93 (11), 115424.
1. Lu, J.#; Pan, J.#; Yeh, S.-S.; Zhang, H.; Zheng, Y.; Chen, Q.; Wang, Z.; Zhang, B.; Lin, J.-J.; Sheng, P., Negative correlation between charge carrier density and mobility fluctuations in graphene. Physical Review B 2014, 90 (8), 085434.
2025
1. L. Zhang, M. He, X. Wang, H. Zhang, K. Han, Y. Liu, L. Zhang, Y. Cheng, J. Pan*, Z. Qu*, Z. Wang*, Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2. Journal of Physics D: Applied Physics, 58, 105005 (2025)
2024
4. J. Pan, H. Wang, L. Zou, H. Xie, Y. Ding, Y. Zhang, A. Fang, Z. Wang*, Inducing Berry curvature dipole in multilayer graphene through inhomogeneous interlayer sliding. Physical Review B, 110, 235418 (2024)
3. P. Shi#, X. Wang#, L. Zhang, W. Song, K. Yang, S. Wang, R. Zhang, L. Zhang, T. Taniguchi, K. Watanabe, S. Yang, L. Zhang, L. Wang, W. Shi, J. Pan*, Z. Wang*, Magnetoresistance Oscillations in Vertical Junctions of 2D Antiferromagnetic Semiconductor CrPS4, Physical Review X, 14, 041065 (2024)
2. L. Zhang, X. Wang, Q. Li, H. Xie, L. Zhang, L. Zhang, J. Pan*, Y. Cheng*, Z. Wang*, Bias voltage driven tunneling magnetoresistance polarity reversal in 2D stripy antiferromagnet CrOCl, Applied Physics Letters, 125, 222403 (2024)
Before Joining XJTU:
10. You, J.; Pan, J.; Shang, S.-L.; Xu, X.; Liu, Z.; Li, J.; Liu, H.; Kang, T.; Xu, M.; Li, S.; Kong, D.; Wang, W.; Gao, Z.; Zhou, X.; Zhai, T.; Liu, Z.-K.; Kim, J.-K.; Luo, Z., Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior. Nano Letters 2022, 22 (24), 10167-10175.
9. Zhang, T.; Zhang, H.; Pan, J.; Sheng, P., Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot graphene. New Journal of Physics 2022, 24 (11), 113027.
8. Kang, T.; Jin, Z.; Han, X.; Liu, Y.; You, J.; Wong, H.; Liu, H.; Pan, J.; Liu, Z.; Tang, T. W.; Zhang, K.; Wang, J.; Yu, J.; Li, D.; Pan, A.; Pan, D.; Wang, J.; Liu, Y.; Luo, Z., Band Alignment Engineering by Twist Angle and Composition Modulation for Heterobilayer. Small 2022, 18 (29), 2202229.
7. Zhang, B.; Zhang, T.; Pan, J.; Chow, T. P.; Aboalsaud, A. M.; Lai, Z.; Sheng, P., Peierls-type metal-insulator transition in carbon nanostructures. Carbon 2021, 172, 106-111.
6. Pan, J.#; Yeh, S.-S.#; Zhang, H.; Rees, D. G.; Zhang, T.; Zhang, B.; Lin, J.-J.; Sheng, P., Correlation hard gap in antidot graphene. Physical Review B 2021, 103 (23), 235114.
5. Pan, J.; Zhang, T.; Zhang, H.; Zhang, B.; Dong, Z.; Sheng, P., Berry Curvature and Nonlocal Transport Characteristics of Antidot Graphene. Physical Review X 2017, 7 (3), 031043.
4. Abidi, I. H.; Liu, Y.; Pan, J.; Tyagi, A.; Zhuang, M.; Zhang, Q.; Cagang, A. A.; Weng, L.-T.; Sheng, P.; Goddard III, W. A.; Luo, Z., Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil. Advanced Functional Materials 2017, 27 (23), 1700121.
3. Wu, R.#; Pan, J.#; Ou, X.; Zhang, Q.; Ding, Y.; Sheng, P.; Luo, Z., Concurrent fast growth of sub-centimeter single-crystal graphene with controlled nucleation density in a confined channel. Nanoscale 2017, 9 (27), 9631-9640.
2. Pan, J.; Zhang, H.; Zheng, Y.; Zhang, B.; Zhang, T.; Sheng, P., Spatial variation of charge carrier density in graphene under a large bias current. Physical Review B 2016, 93 (11), 115424.
1. Lu, J.#; Pan, J.#; Yeh, S.-S.; Zhang, H.; Zheng, Y.; Chen, Q.; Wang, Z.; Zhang, B.; Lin, J.-J.; Sheng, P., Negative correlation between charge carrier density and mobility fluctuations in graphene. Physical Review B 2014, 90 (8), 085434.
