Publications - 潘 杰
（* for equal contribution)
1. Pan, J.; Xie, H.; Shi, P.; Wang, X.; Zhang, L.; Wang, Z., Berry curvature dipole in bilayer graphene with interlayer sliding. Phys. Rev. B 2024, 109 (7), 075415.
Before Joining XJTU:
2. You, J.; Pan, J.; Shang, S.-L.; Xu, X.; Liu, Z.; Li, J.; Liu, H.; Kang, T.; Xu, M.; Li, S.; Kong, D.; Wang, W.; Gao, Z.; Zhou, X.; Zhai, T.; Liu, Z.-K.; Kim, J.-K.; Luo, Z., Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior. Nano Lett. 2022, 22 (24), 10167-10175.
3. Zhang, T.; Zhang, H.; Pan, J.; Sheng, P., Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot graphene. New J. Phys. 2022, 24 (11), 113027.
4. Kang, T.; Jin, Z.; Han, X.; Liu, Y.; You, J.; Wong, H.; Liu, H.; Pan, J.; Liu, Z.; Tang, T. W.; Zhang, K.; Wang, J.; Yu, J.; Li, D.; Pan, A.; Pan, D.; Wang, J.; Liu, Y.; Luo, Z., Band Alignment Engineering by Twist Angle and Composition Modulation for Heterobilayer. Small 2022, 18 (29), 2202229.
5. Zhang, B.; Zhang, T.; Pan, J.; Chow, T. P.; Aboalsaud, A. M.; Lai, Z.; Sheng, P., Peierls-type metal-insulator transition in carbon nanostructures. Carbon 2021, 172, 106-111.
6. Pan, J.*; Yeh, S.-S.*; Zhang, H.; Rees, D. G.; Zhang, T.; Zhang, B.; Lin, J.-J.; Sheng, P., Correlation hard gap in antidot graphene. Phys. Rev. B 2021, 103 (23), 235114.
7. Pan, J.; Zhang, T.; Zhang, H.; Zhang, B.; Dong, Z.; Sheng, P., Berry Curvature and Nonlocal Transport Characteristics of Antidot Graphene. Phys. Rev. X 2017, 7 (3), 031043.
8. Abidi, I. H.; Liu, Y.; Pan, J.; Tyagi, A.; Zhuang, M.; Zhang, Q.; Cagang, A. A.; Weng, L.-T.; Sheng, P.; Goddard III, W. A.; Luo, Z., Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil. Adv Funct Mater 2017, 27 (23), 1700121.
9. Wu, R.*; Pan, J.*; Ou, X.; Zhang, Q.; Ding, Y.; Sheng, P.; Luo, Z., Concurrent fast growth of sub-centimeter single-crystal graphene with controlled nucleation density in a confined channel. Nanoscale 2017, 9 (27), 9631-9640.
10. Pan, J.; Zhang, H.; Zheng, Y.; Zhang, B.; Zhang, T.; Sheng, P., Spatial variation of charge carrier density in graphene under a large bias current. Phys. Rev. B 2016, 93 (11), 115424.
11. Lu, J.*; Pan, J.*; Yeh, S.-S.; Zhang, H.; Zheng, Y.; Chen, Q.; Wang, Z.; Zhang, B.; Lin, J.-J.; Sheng, P., Negative correlation between charge carrier density and mobility fluctuations in graphene. Phys. Rev. B 2014, 90 (8), 085434.
1. Pan, J.; Xie, H.; Shi, P.; Wang, X.; Zhang, L.; Wang, Z., Berry curvature dipole in bilayer graphene with interlayer sliding. Phys. Rev. B 2024, 109 (7), 075415.
Before Joining XJTU:
2. You, J.; Pan, J.; Shang, S.-L.; Xu, X.; Liu, Z.; Li, J.; Liu, H.; Kang, T.; Xu, M.; Li, S.; Kong, D.; Wang, W.; Gao, Z.; Zhou, X.; Zhai, T.; Liu, Z.-K.; Kim, J.-K.; Luo, Z., Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior. Nano Lett. 2022, 22 (24), 10167-10175.
3. Zhang, T.; Zhang, H.; Pan, J.; Sheng, P., Theoretical and experimental investigation of the metal–insulator transition in disordered anti-dot graphene. New J. Phys. 2022, 24 (11), 113027.
4. Kang, T.; Jin, Z.; Han, X.; Liu, Y.; You, J.; Wong, H.; Liu, H.; Pan, J.; Liu, Z.; Tang, T. W.; Zhang, K.; Wang, J.; Yu, J.; Li, D.; Pan, A.; Pan, D.; Wang, J.; Liu, Y.; Luo, Z., Band Alignment Engineering by Twist Angle and Composition Modulation for Heterobilayer. Small 2022, 18 (29), 2202229.
5. Zhang, B.; Zhang, T.; Pan, J.; Chow, T. P.; Aboalsaud, A. M.; Lai, Z.; Sheng, P., Peierls-type metal-insulator transition in carbon nanostructures. Carbon 2021, 172, 106-111.
6. Pan, J.*; Yeh, S.-S.*; Zhang, H.; Rees, D. G.; Zhang, T.; Zhang, B.; Lin, J.-J.; Sheng, P., Correlation hard gap in antidot graphene. Phys. Rev. B 2021, 103 (23), 235114.
7. Pan, J.; Zhang, T.; Zhang, H.; Zhang, B.; Dong, Z.; Sheng, P., Berry Curvature and Nonlocal Transport Characteristics of Antidot Graphene. Phys. Rev. X 2017, 7 (3), 031043.
8. Abidi, I. H.; Liu, Y.; Pan, J.; Tyagi, A.; Zhuang, M.; Zhang, Q.; Cagang, A. A.; Weng, L.-T.; Sheng, P.; Goddard III, W. A.; Luo, Z., Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil. Adv Funct Mater 2017, 27 (23), 1700121.
9. Wu, R.*; Pan, J.*; Ou, X.; Zhang, Q.; Ding, Y.; Sheng, P.; Luo, Z., Concurrent fast growth of sub-centimeter single-crystal graphene with controlled nucleation density in a confined channel. Nanoscale 2017, 9 (27), 9631-9640.
10. Pan, J.; Zhang, H.; Zheng, Y.; Zhang, B.; Zhang, T.; Sheng, P., Spatial variation of charge carrier density in graphene under a large bias current. Phys. Rev. B 2016, 93 (11), 115424.
11. Lu, J.*; Pan, J.*; Yeh, S.-S.; Zhang, H.; Zheng, Y.; Chen, Q.; Wang, Z.; Zhang, B.; Lin, J.-J.; Sheng, P., Negative correlation between charge carrier density and mobility fluctuations in graphene. Phys. Rev. B 2014, 90 (8), 085434.
(创新港)
