团队论文“ An Accurate Equivalent Circuit based Analytical Model of Sustained Oscillation Analysis for GaN HEMT in Half-Bridge Circuits”被IEEE Journal of Emerging and Selected Topics in Power Electronics期刊录用。其中学生何言杰是该论文的第一作者。论文摘要如下：

    Abstract: Due to the emerging demands of applications such as photovoltaic systems, server power supplies, and electric vehicles, Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) based converters are required to operate reliably across ultra-wide input voltage ranges. While existing analytical models effectively characterize switching transients, they typically neglect the modeling of instability, specifically sustained oscillation. Furthermore, traditional small-signal models established for sustained oscillation analysis are restricted to frequency-domain stability analysis while the accuracy is limited by the linearization of system parameters. To address existing models’ limitations, this paper takes advantages of analytical methods and studies the unstable behaviors, proposing an accurate analytical model specifically for the sustained oscillation analysis of GaN HEMTs. The proposed model ensures high accuracy by explicitly incorporating the device’s unique reverse conduction mechanism and nonlinear parameters. By decomposing the oscillation process into sub-modes and solving state-space equations, the model reconstructs the oscillation waveforms and identifies operation region transitions to simulate both normal and unstable scenarios. Experimental verifications on a 650 V GaN HEMT demonstrate strong agreement between the model and measurements, with high consistency of switching waveforms and relative errors for oscillation frequency within 8 %. The proposed model not only reveals the theoretical mechanism of sustained oscillation but also serves as a vital tool for determining the safe operating area and optimizing circuit parameters such as the PCB layout and the gate resistance to ensure system reliability.