柴正  (教授)

2026

• Xu M#, Yue X#, Jian J, Li T*, Chai Z*, Min T*. Spintronic Materials and Devices for Artificial Intelligence Applications[J], Advanced Materials, (invited review article, accepted)

• Jian J, Zhao F, Chai Z*, et al. Enhanced Intermediate Resistance States in Magnetic Tunnel Junctions at Cryogenic Temperatures [C]//2026 International Reliability Physics Symposium (IRPS) (accepted)

• Jian J, Yuan X, Chai Z*, et al. Random Telegraph Signal Generation based on Magnetic Tunnel Junction for Security and Unconventional Computing Applications[J]. Journal of Physics D: Applied Physics, 2026, 59(1): 015005

2025

• Li H#, Chai Z#, Dong W, et al. A lossless and fully parallel spintronic compute-in-memory macro for artificial intelligence chips[J]. Nature Electronics, 2025, 8: 1046–1058.

• Yuan X, Luo Y, Chai Z*, et al. A Versatile Hardware Solution for Generating Power Law Noise with Tunable Long-Term Dependency[J]. IEEE Electron Device Letters, 2025,46(8): 1413-1416.

• Jian J#, Yuan X#, Chai Z*, et al. Bipolar Random Signal Generation with Electrical Operation Based on Two Magnetic Tunnel Junctions[J]. IEEE Electron Device Letters, 2025, 46(2): 171-174. (Editor’s Pick and Cover Article)

• Yuan X, Chai Z*, Zhou X, et al. Hardware Estimation for the Eigenvectors of Stochastic Matrices using Magnetic Tunnel Junctions[J]. IEEE Electron Device Letters, 2025, 46(3): 500-503.

• Saxena N, Wang C, Chai Z, et al. Nanosecond-scale transient defect spectroscopy of switching and relaxation dynamics in GeAsSe Ovonic Threshold Switching Devices [C] 2025 IEEE International Electron Devices Meeting (IEDM). IEEE, 2025: 1-4.

2024

• Yuan X, Jian J, Chai Z*, et al. Arbitrary modulation of average dwell time in discrete-time Markov chains based on tunneling  magnetoresistance effect[J]. IEEE Electron Device Letters, 2024, 45(7): 1349-1352.

• Hu Z, Wang G, Chai Z, et al. Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices[C]//2024 IEEE International Electron Devices Meeting (IEDM). IEEE, 2024: 1-4.

• Bai M, Wu S, Wang H, Wang H, Feng Y, Qi Y, Wang C, Chai Z, Min T, Wu J, Zhan X, Chen J. A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI[J]. Science China Information Sciences, 2024, 67(12): 222403

2023

• Yuan X, Jian J, Chai Z*, et al. Markov chain signal generation based on single magnetic tunnel junction[J]. IEEE Electron Device Letters, 2023, 44(12): 1963-1966.

• Liu T, Zhou Yizhuo, Zhou Y, Chai Z, Chen J. Hardware Efficient Reconfigurable Logic-in-Memory Circuit Based Neural Network Computing[C]. IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2023: 1-5.

2022

• Du Y, Shao W, Chai Z*, et al. Synaptic 1/f noise injection for overfitting suppression in hardware neural networks[J]. Neuromorphic Computing and Engineering, 2022, 2(3): 034006.

• Zhou X, Hu Z, Chai Z*, et al. Impact of relaxation on the performance of GeSe true random number generator based on ovonic threshold switching[J]. IEEE Electron Device Letters, 2022, 43(7): 1061-1064.

• Hu Z, Zhang W, Degraeve R, Garbin D, Chai Z, et al. New insights of the switching process in GeAsTe ovonic threshold switching (OTS) selectors[J]. IEEE Transactions on Electron Devices, 2022, 70(2): 812-818.

2021

• Chai Z, Zhang W, Clima S, et al. Cycling induced metastable degradation in GeSe Ovonic threshold switching selector[J]. IEEE Electron Device Letters, 2021, 42(10): 1448-1451.

• Xue, F, He, X, Chai, Z, et al. Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing[J]. Advanced Materials, 2021, 33 (21): 2008709.

2020

• Chai Z, Freitas P, Zhang W D, et al. Stochastic computing based on volatile GeSe ovonic threshold switching selectors[J]. IEEE Electron Device Letters, 2020, 41(10): 1496-1499.

• Joksas D, Freitas P, Chai Z, et al. Committee machines—a universal method to deal with non-idealities in memristor-based neural networks[J]. Nature Communications,  2020, 11(4273): 1-10.

2019

• Chai Z, Shao W, Zhang W, et al. GeSe-based ovonic threshold switching volatile true random number generator[J]. IEEE Electron Device Letters, 2019, 41(2): 228-231.

• Chai Z, Zhang W, Degraeve R, et al. Dependence of switching probability on operation conditions in Ge_xSe_1-x ovonic threshold switching selectors[J]. IEEE Electron Device Letters, 2019, 40(8): 1269-1272.

• Chai Z, Zhang W, Degraeve R, et al. Evidence of filamentary switching and relaxation mechanisms in Ge_xSe_1-x OTS selectors[C]//2019 Symposium on VLSI Technology. IEEE, 2019: T238-T239.

• Hatem F, Chai Z, Zhang W, et al. Endurance improvement of more than five orders in Ge_xSe_1-x OTS selectors by using a novel refreshing program scheme[C]//2019 IEEE International Electron Devices Meeting (IEDM). IEEE, 2019: 35.2. 1-35.2. 4.

• Chai Z, Zhang W, Degraeve R, et al., RTN in Ge_xSe_1-x OTS Selector Devices[J], Microelectronic Engineering, 2019, 215(15): 110990

2018

• Chai Z, Freitas P, Zhang W, et al. Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network[J]. IEEE Electron Device Letters, 2018, 39(11): 1652-1655.

• Chai Z, Zhang W, Freitas P, et al. The over-reset phenomenon in Ta₂O₅ RRAM device investigated by the RTN-based defect probing technique[J]. IEEE Electron Device Letters, 2018, 39(7): 955-958.

• Ma J, Chai Z, Zhang W D, et al. TDDB mechanism in a-Si/TiO₂ nonfilamentary RRAM device[J]. IEEE Transactions on Electron Devices, 2018, 66(1): 777-784.

2017

• Chai Z, Ma J, Zhang W D, et al. Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals[J]. IEEE Transactions on Electron Devices, 2017, 64(10): 4099-4105.

2016

• Chai Z, Ma J, Zhang W, et al. RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO₂ RRAM switching operation and failure mechanism[C]//2016 IEEE Symposium on VLSI Technology. IEEE, 2016: 1-2.

• Ma J, Chai Z, Zhang W, et al. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement[C]//2016 IEEE International Electron Devices Meeting (IEDM). IEEE, 2016: 21.4. 1-21.4. 4.