柴正  (教授)

博士生导师 硕士生导师

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所在单位：材料科学与工程学院

学历：博士研究生毕业

办公地点：兴庆校区仲英楼A611

性别：男

联系方式：

学位：博士

学科：电子科学与技术

   
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  • 2026

    • Nishant Saxena, Chengcheng Wang, Zeyu Hu, Guosheng Wang, Muhammad Naqi, Linxi Zhang, Weidong Zhang, Zheng Chai, Daniele Garbin, Robin Degraeve, Sergiu Clima, Taras Ravsher and Attilio Belmonte, Impact of Chalcogen Chemistry on Transient Switching Dynamics in GeAsSe and GeAsTe Ovonic Threshold Switches[J], IEEE Transactions on Electron Devices, 2026, accepted.

    • Xu M#, Yue X#, Jian J, Li T*, Chai Z*, Min T*. Spintronic Materials and Devices for Artificial Intelligence Applications[J], Advanced Materials, 2026, 38(29): e18570

    • Jian J, Zhao F, Chai Z*, et al. Enhanced Intermediate Resistance States in Magnetic Tunnel Junctions at Cryogenic Temperatures [C]//2026 International Reliability Physics Symposium (IRPS), 2026

    • Jian J, Yuan X, Chai Z*, et al. Random Telegraph Signal Generation based on Magnetic Tunnel Junction for Security and Unconventional Computing Applications[J]. Journal of Physics D: Applied Physics, 2026, 59(1): 015005

    2025

    • Li H#, Chai Z#, Dong W, et al. A lossless and fully parallel spintronic compute-in-memory macro for artificial intelligence chips[J]. Nature Electronics, 2025, 8: 1046–1058.

    • Yuan X, Luo Y, Chai Z*, et al. A Versatile Hardware Solution for Generating Power Law Noise with Tunable Long-Term Dependency[J]. IEEE Electron Device Letters, 2025,46(8): 1413-1416.

    • Jian J#, Yuan X#, Chai Z*, et al. Bipolar Random Signal Generation with Electrical Operation Based on Two Magnetic Tunnel Junctions[J]. IEEE Electron Device Letters, 2025, 46(2): 171-174. (Editor’s Pick and Cover Article)

    • Yuan X, Chai Z*, Zhou X, et al. Hardware Estimation for the Eigenvectors of Stochastic Matrices using Magnetic Tunnel Junctions[J]. IEEE Electron Device Letters, 2025, 46(3): 500-503.

    • Saxena N, Wang C, Chai Z, et al. Nanosecond-scale transient defect spectroscopy of switching and relaxation dynamics in GeAsSe Ovonic Threshold Switching Devices [C] 2025 IEEE International Electron Devices Meeting (IEDM). IEEE, 2025: 1-4.

    2024

    • Yuan X, Jian J, Chai Z*, et al. Arbitrary modulation of average dwell time in discrete-time Markov chains based on tunneling  magnetoresistance effect[J]. IEEE Electron Device Letters, 2024, 45(7): 1349-1352.

    • Hu Z, Wang G, Chai Z, et al. Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices[C]//2024IEEE International Electron Devices Meeting (IEDM). IEEE, 2024: 1-4.

    • Bai M, Wu S, Wang H, Wang H, Feng Y, Qi Y, Wang C, Chai Z, Min T, Wu J, Zhan X, Chen J. A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI[J]. Science China Information Sciences, 2024, 67(12): 222403

    2023

    • Yuan X, Jian J, Chai Z*, et al. Markov chain signal generation based on single magnetic tunnel junction[J]. IEEE Electron Device Letters, 2023, 44(12): 1963-1966.

    • Liu T, Zhou Yizhuo, Zhou Y, Chai Z, Chen J. Hardware Efficient Reconfigurable Logic-in-Memory Circuit Based Neural Network Computing[C]. IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2023: 1-5.

    2022

    • Du Y, Shao W, Chai Z*, et al. Synaptic 1/f noise injection for overfitting suppression in hardware neural networks[J]. Neuromorphic Computing and Engineering, 2022, 2(3): 034006.

    • Zhou X, Hu Z, Chai Z*, et al. Impact of relaxation on the performance of GeSe true random number generator based on ovonic threshold switching[J]. IEEE Electron Device Letters, 2022, 43(7): 1061-1064.

    • Hu Z, Zhang W, Degraeve R, Garbin D, Chai Z, et al. New insights of the switching process in GeAsTe ovonic threshold switching (OTS) selectors[J]. IEEE Transactions on Electron Devices, 2022, 70(2): 812-818.

    2021

    • Chai Z, Zhang W, Clima S, et al. Cycling induced metastable degradation in GeSe Ovonic threshold switching selector[J]. IEEE Electron Device Letters, 2021, 42(10): 1448-1451.

    • Xue, F, He, X, Chai, Z, et al. Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing[J]. Advanced Materials, 2021, 33 (21): 2008709.

    2020

    • Chai Z, Freitas P, Zhang W D, et al. Stochastic computing based on volatile GeSe ovonic threshold switching selectors[J]. IEEE Electron Device Letters, 2020, 41(10): 1496-1499.

    • Joksas D, Freitas P, Chai Z, et al. Committee machines—a universal method to deal with non-idealities in memristor-based neural networks[J]. Nature Communications,  2020, 11(4273): 1-10.

    2019

    • Chai Z, Shao W, Zhang W, et al. GeSe-based ovonic threshold switching volatile true random number generator[J]. IEEE Electron Device Letters, 2019, 41(2): 228-231.

    • Chai Z, Zhang W, Degraeve R, et al. Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors[J]. IEEE Electron Device Letters, 2019, 40(8): 1269-1272.

    • Chai Z, Zhang W, Degraeve R, et al. Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors[C]//2019 IEEE Symposium on VLSI Technology (VLSI), 2019: T238-T239.

    • Hatem F, Chai Z, Zhang W, et al. Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme[C]//2019 IEEE International Electron Devices Meeting (IEDM). IEEE, 2019: 35.2. 1-35.2. 4.

    • Chai Z, Zhang W, Degraeve R, et al., RTN in GexSe1-x OTS Selector Devices[J], Microelectronic Engineering, 2019, 215(15): 110990

    2018

    • Chai Z, Freitas P, Zhang W, et al. Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network[J]. IEEE Electron Device Letters, 2018, 39(11): 1652-1655.

    • Chai Z, Zhang W, Freitas P, et al. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique[J]. IEEE Electron Device Letters, 2018, 39(7): 955-958.

    • Ma J, Chai Z, Zhang W D, et al. TDDB mechanism in a-Si/TiO2 nonfilamentary RRAM device[J]. IEEE Transactions on Electron Devices, 2018, 66(1): 777-784.

    2017

    • Chai Z, Ma J, Zhang W D, et al. Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals[J]. IEEE Transactions on Electron Devices, 2017, 64(10): 4099-4105.

    2016

    • Chai Z, Ma J, Zhang W, et al. RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism[C]//2016 IEEE Symposium on VLSI Technology (VLSI), 2016: 1-2.

    • Ma J, Chai Z, Zhang W, et al. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement[C]//2016 IEEE International Electron Devices Meeting (IEDM). IEEE, 2016: 21.4. 1-21.4. 4.