学术奖励

2020       日本马扎克财团（Mazak Foundation）杰出论文奖

2019       第十五届中日超精密加工国际会议（CJUPM2019）优秀论文奖

2018       第十四届中日超精密加工国际会议（CJUPM2018）青年科学家奖及优秀论文奖

国际学术报告

 

论文

期刊论文

  1. X. Yang, X. Yang, K. Yamamura, Effects of electrolyte type and concentration on the anodic oxidation of 4H-SiC (0001) in slurryless electrochemical mechanical polishing, Electrochimica Acta, 474 (2024) 143531.
  2. X. Yang, X. Yang*, Z. Jiang, K. Yamamura, Selective electrochemical mechanical polishing of 4H–SiC surface employing porous material impregnated with electrolyte, Ceramics International, 49 (2023) 34569–34581.
  3. X. Yang, X. Yang, K. Aoki, K. Yamamura, Slurryless electrochemical mechanical polishing of 4-inch 4H–SiC (0001) and (000–1) surfaces, Precision Engineering, 83 (2023) 237-249.
  4. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Novel SiC wafer manufacturing process employing three-step slurryless electrochemical mechanical polishing, Journal of Manufacturing Processes, 70 (2021) 350–360. (JCR Q1, IF: 5.684)
  5. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Highly efficient planarization of sliced 4H–SiC (0001) wafer by slurryless electrochemical mechanical polishing, International Journal of Machine Tools and Manufacture, 144 (2019) 103431. (JCR Q1, IF: 10.331)
  6. X. Yang, X. Yang, R. Sun, K. Kawai, K. Arima, K. Yamamura, Obtaining atomically smooth 4H–SiC (0001) surface by controlling balance between anodizing and polishing in electrochemical mechanical polishing, Nanomanufacturing and Metrology, 2 (2019) 140–147.
  7. X. Yang, R. Sun, K. Kawai, K. Arima, K. Yamamura, Surface modification and microstructuring of 4H-SiC(0001) by anodic oxidation with sodium chloride aqueous solution, ACS Applied Materials & Interfaces, 11(2) (2019) 2535–2542. (JCR Q1, IF: 10.383)
  8. X. Yang, R. Sun, Y. Ohkubo, K. Kawai, K. Arima, K. Endo, K. Yamamura, Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing, Electrochimica Acta, 271 (2018) 666–676. (JCR Q1, IF: 7.336)
  9. X. Yang, Y. Ohkubo, K. Endo, K. Yamamura, AFM observation of initial oxidation stage of 4H-SiC (0001) in electrochemical mechanical polishing, Procedia CIRP, 68 (2018) 735–740. 
  10. X. Yang, C. An, Z. Wang, Q. Wang, Y. Peng, J. Wang, Research on surface topography in ultra-precision flycutting based on the dynamic performance of machine tool spindle, The International Journal of Advanced Manufacturing Technology, 87 (2016) 1957–1965. 
  11. X. Yang, Z. Wang, C. Wang, Y. Peng, Analysis of effects of precession mechanism error on polishing spot for bonnet polishing, Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture, 232 (2018) 350–357. 
  12. X. Yang, C. An, Z. Sun, Z. Wang, Y. Peng, J. Wang, Surface texture analysis for ultra-precision flycutting machining based on the dynamic characteristics of machine tools, Journal of Vibration and Shock, 35 (2016) 196–202. In Chinese.
  13. Z. Wang, X. Yang*, J. Zhang, C. An, Y. Peng, Cutting force test for ultra-precision flycutting of optical crystal. Optics and Precision Engineering, 23 (2015) 194–201. In Chinese.
  14. X. Yang, X. Yang, H. Gu, K. Kawai, K. Arima, K. Yamamura, Charge utilization efficiency and side reactions in the electrochemical mechanical polishing of 4H-SiC (0001), Journal of The Electrochemical Society, 169 (2022) 023501.
  15. X. Yang, X. Yang, H. Gu, K. Kawai, K. Arima, K. Yamamura, Efficient and slurryless ultrasonic vibration assisted electrochemical mechanical polishing for 4H–SiC wafers, Ceramic International, 48 (2022) 7570–7583.
  16. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Dominant factors and their action mechanisms on material removal rate in electrochemical mechanical polishing of 4H-SiC (0001) surface. Applied Surface Science, 562 (2021) 150130.
  17. R. Sun, X. Yang, K. Kawai, K. Arima, K. Yamamura, High-quality plasma-assisted polishing of aluminum nitride ceramic, CIRP Annals – Manufacturing Technology, 69(1) (2020) 301–304.
  18. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface, Electrochemistry Communications, 100 (2019) 1–5.
  19. R. Sun, X. Yang, Y. Ohkubo, K. Endo, K. Yamamura, Optimization of gas composition used in plasma chemical vaporization machining for figuring of reaction-sintered silicon carbide with low surface roughness, Scientific Reports, 8 (2018) 2376.
  20. R. Sun, X. Yang, K. Watanabe, S. Miyazaki, T. Fukano, M. Kitada, K. Arima, K. Kawai, K. Yamamura, Etching characteristics of quartz crystal wafers using argon‑based atmospheric pressure CF4 plasma stabilized by ethanol addition, Nanomanufacturing and Metrology, 2 (2019) 168–176.
  21. C. Wang, X. Yang, B. Zhong, Z. Wang, Y. Guo, Q. Xu, Effect of the inflated-pressure to the tool influence function for polishing using SR bonnet, Proceedings of SPIE, 9281 (2014) 92810U.
  22. C. Wang, Z. Wang, X. Yang, Z. Sun, Y. Peng, Y. Guo, Q. Xu, Modeling of the static tool influence function of bonnet polishing based on FEA. The International Journal of Advanced Manufacturing Technology, 74 (2014) 341–349.
  23. Z. Wang, Q. Wang, X. Yang, S. Chen, X. Zhuang, Y. Peng, Dressing scheme and process parameters analysis for bonnet tool in bonnet polishing, Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science, 231(19) (2017) 3569–3578.
  24. C. Wang, W. Yang, Z. Wang, X. Yang, C. Hu, B. Zhong, Y. Guo and Q. Xu, Dwell-time algorithm for polishing large optics. Applied Optics, 53(21/20) (2014) 4752–4760.
  25. C. Wang, W. Yang, Z. Wang, X. Yang, Z. Sun, B. Zhong, R. Pan, Y. Guo and Q. Xu, Highly efficient deterministic polishing using a semirigid bonnet. Optical Engineering, 53(9) (2014) 095102.
  26. D. Zhang, P. Yang, G. Bi, X. Yang, S. Ye, Y. Guo, Stitching measurement technique for large-aperture aspheric surface during grinding process. Journal of Mechanical Engineering, 51(4) (2015) 22–29. In Chinese.
  27. Y. Zhang, X. Yang, X. Li and Y. Guo. Research on eliminating cumulative errors for stitching algorithm of large aperture aspheric optical elements. Advanced Materials Research, 924 (2014) 377–381.

会议论文

  1. X Yang, X. Yang, H. Gu, K. Kawai, K. Arima, K. Yamamura, Effects of subsurface damage on material removal rate in slurryless electrochemical mechanical polishing of 4H-SiC (0001) surface, The 16th China-Japan International Conference on Ultra-Precision Machining Process (CJUMP 2022), 101-106, Mar. 27, 2022.
  2. X Yang, X. Yang, H. Gu, K. Kawai, K. Arima, K. Yamamura, Improvement of material removal rate of slurryless electrochemical mechanical polishing by introducing shallow strained layer on 4H-SiC (0001) surface. The 23rd International Symposium on Advances in Abrasive Technology (ISAAT2021), C004, Dec. 2021.
  3. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Obtaining of atomically smooth 4H-SiC (0001) surface by optimizing anodic oxidation parameters in slurryless electrochemical mechanical polishing. 18th International Conference on Precision Engineering (ICPE2020), B-4-5, Nov. 2020.
  4. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Optimization of polishing parameters for obtaining smooth 4H-SiC (0001) surface by slurryless electrochemical mechanical polishing, The 22nd International Symposium on Advances in Abrasive Technology (ISAAT 2019), P07, Dec. 2019.
  5. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Preliminary study on slurryless electrochemical mechanical polishing of sliced 4H-SiC (0001) surface, The 8th International Conference of Asian Society for Precision Engineering and Nanotechnology (ASPEN 2019), B32, Nov. 2019.
  6. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Slurryless electrochemical mechanical polishing of 4H-SiC (0001) surfaces, International Conference on Silicon Carbide and Related Materials (ICSCRM 2019), Fri-2B-03, Oct. 2019.
  7. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Comparison of two-step and simultaneous slurryless electrochemical mechanical polishing for obtaining smooth 4H-SiC (0001) surface, The 15th China-Japan International Conference on Ultra-Precision Machining Process (CJUMP 2019), C000051, Sep. 2019.
  8. X. Yang, K. Kawai, K. Arima, K. Yamamura, Preliminary study on the electrochemical mechanical polishing of 4H-SiC (0001) surface, The 14th China-Japan International Conference on Ultra-Precision Machining Process (CJUMP 2018), S1-20, Sep. 2018.
  9. X. Yang, K. Kawai, K. Arima, K. Yamamura, Electrochemical mechanical polishing of 4H-SiC (0001) with different grinding stones, The 21st International Symposium on Advances in Abrasive Technology (ISAAT 2018), Chapter 09, No. 90, Oct. 2018.
  10. X. Yang, Y. Ohkubo, K. Endo, K. Yamamura, The relationship between anodic oxidation rate and electric potential in electrochemical mechanical polishing of 4H-SiC (0001), The 13th China-Japan International Conference on Ultra-Precision Machining Process (CJUMP2017), pp. 245–248, Nov. 2017.
  11. 楊旭, 楊暁喆, 谷海洋, 川合健太郎, 有馬健太, 山村和也, 電気化学機械研磨によるSiCの高能率スラリーレス加工法の開発（第8報）－多孔質材料を用いた4H-SiC(0001)表面の局部電気化学機械研磨－, 2021年度精密工学会秋季大会学術講演会講演論文集, pp. 99, Sep. 2021.
  12. 楊旭, 谷海洋, 楊暁喆, 川合健太郎, 有馬健太, 山村和也, 4H-SiC (0001)のスラリーレス電気化学機械研磨に関する研究 −砥石材質と研磨特性の相関−, 2021年度砥粒加工学会学術講演会論文集, pp. 12–13, Sep. 2021.
  13. 楊旭, 楊暁喆, 川合健太郎, 有馬健太, 山村和也, 電気化学機械研磨によるSiCの高能率スラリーレス加工法の開発（第7報）－多孔質材料を用いたSiC表面の局部陽極酸化に関する検討－, 2021年度精密工学会春季大会学術講演会講演論文集, pp. 311, Mar. 2021.
  14. 楊旭, 楊暁喆, 川合健太郎, 有馬健太, 山村和也, 電気化学機械研磨によるSiCの高能率スラリーレス加工法の開発（第6報）－浅い歪場の形成による研磨レートの向上－, 2020年度精密工学会秋季大会学術講演会講演論文集, pp. 189, Sep. 2020.
  15. 楊旭, 楊暁喆, 川合健太郎, 有馬健太, 山村和也, 電気化学機械研磨によるSiCの高能率スラリーレス加工法の開発（第5報）－表面粗さを低減させる電位条件の基礎検討－, 2020年度精密工学会春季大会学術講演会講演論文集, pp. 669, Mar. 2020.
  16. 楊旭, 楊暁喆, 川合健太郎, 有馬健太, 山村和也, 電気化学機械研磨によるSiCの高能率スラリーレス加工法の開発（第4報）－4H-SiC (0001)スライス面のスラリーレス電気化学機械研磨－, 2020年度精密工学会春季大会学術講演会講演論文集, pp. 668, Mar. 2020.
  17. 楊旭, 楊暁喆, 川合健太郎, 有馬健太, 山村和也, 電気化学機械研磨によるSiCの高能率スラリーレス加工法の開発（第3報）－酸化レートと研磨レートとのバランスが表面粗さに与える影響の調査－, 2019年度精密工学会春季大会学術講演会講演論文集, pp. 550–550, Mar. 2019.
  18. 楊旭, 川合健太郎, 有馬健太, 山村和也, 電気化学機械研磨によるSiCの高能率スラリーレス加工法の開発, 電気加工学会全国大会（2018）講演論文集, pp. 95–96, Nov. 2018.
  19. 楊旭, 川合健太郎, 有馬健太, 山村和也, 電気化学機械研磨によるSiCの高能率ダメージフリー加工法の開発（第2報）－酸化レートの変化による表面粗さの改善－, 2018年度精密工学会秋季大会学術講演会講演論文集, pp. 428–429, Sep. 2018.
  20. 楊旭, 川合健太郎, 有馬健太, 山村和也, 固定砥粒を用いた4H-SiC (0001)表面の電気化学機械研磨, 精密工学会2018年度関西地方定期学術講演会講演論文集, pp. 42–43, Jun. 2018.
  21. 楊旭, 川合健太郎, 有馬健太, 山村和也, 電気化学機械研磨によるSiCの高能率ダメージフリー加工法の開発（第1報）－初期研磨段階における陽極酸化電流の最適化－, 2018年度精密工学会春季大会学術講演会講演論文集, pp. 447–448, Mar. 2018.
  22. H. Gu, X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Relative motion improvement and parameter optimization in slurryless electrochemical mechanical polishing of 4 inch 4H-SiC wafers, The 16th China-Japan International Conference on Ultra-Precision Machining Process (CJUMP 2022), 86-90, Mar. 27, 2022.
  23. H. Gu, X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Optimization of polishing parameters to make the polishing amount distribution uniform in slurryless electrochemical mechanical polishing of 4 inch 4H-SiC wafers. The 23rd International Symposium on Advances in Abrasive Technology (ISAAT2021), C003, Dec. 2021.
  24. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Effects of ultrasonic vibration on slurryless electrochemical mechanical polishing of 4H-SiC (0001) surface. 18th International Conference on Precision Engineering (ICPE2020), B-4-6, Nov. 2020.
  25. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Preliminary study on slurryless ultrasonic-assisted electrochemical mechanical polishing of 4H-SiC (0001) surface, The 22nd International Symposium on Advances in Abrasive Technology (ISAAT2019), P08, Dec. 2019.
  26. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Development of ultrasonic assisted electrochemical mechanical polishing- Preliminary study on the promotion mechanism of ultrasonic in anodic oxidation of 4H-SiC (0001) surface, The 8th International Conference of Asian Society for Precision Engineering and Nanotechnology (ASPEN2019), E11, Nov. 2019.
  27. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Investigation of anodic oxidation characteristics of SiC for ultrasonic assisted electrochemical mechanical polishing, The 15th China-Japan International Conference on Ultra-Precision Machining Process (CJUMP2019), C000052, Sep. 2019.
  28. 谷海洋, 2022年度精密工学会春季大会学術講演会講演論文集
  29. 谷海洋, 楊旭, 楊暁喆, 川合健太郎, 有馬健太, 山村和也, SiCウエハのスラリーレス電気化学機械研磨における砥石/ウエハ相対運動の改善, 2021年度精密工学会秋季大会学術講演会講演論文集, pp. 88, Sep. 2021.
  30. 谷海洋, 楊旭, 楊暁喆, 川合健太郎, 有馬健太, 山村和也, SiCウエハの超音波援用スラリーレス電気化学機械研磨に関する研究 −研磨パラメータと砥石形状の最適化−, 2021年度砥粒加工学会学術講演会論文集, pp. 14–15, Sep. 2021.
  31. X. Yang, X. Yang, K. Kawai, K. Arima, K. Yamamura, Development of high-efficient and damage-free ultrasonic assisted electrochemical mechanical polishing for difficult-to-machine materials, -Effects of mass concentration of electrolyte (NaCl) on the anodic oxidation rate and the promotion performance of ultrasonic vibration-, 2019年度精密工学会春季大会学術講演会講演論文集, pp. 548–549, Mar. 2019.
  32. 楊暁喆, 楊旭, 川合健太郎, 有馬健太, 山村和也, 難加工材料に対するスラリーレス超音波援用陽極酸化研磨法の開発（第2報）－4H-SiC(0001)研磨の基礎検討－, 2019年度精密工学会秋季大会学術講演会講演論文集, pp. 375, Sep. 2019.
  33. 楊暁喆, 楊旭, 川合健太郎, 有馬健太, 山村和也, 超音波援用電気化学機械研磨における4H-SiC (0001)の陽極酸化特性, 精密工学会2019年度関西地方定期学術講演会講演論文集, pp. 50–51, Jun. 2019.