李洋

助理教授 、 硕士生导师

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李洋

助理教授 、 硕士生导师：

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期刊论文

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Representative Papers：

  1. 李洋，等. SZ0501 型系统级封装的瞬时γ辐射和电磁脉冲效应研究进展. (太赫兹科学与电子信息学报,  2025, accept)
  2. Li Y, Peng Z, Guo Y, et al. Pulsed-Laser Testing to Evaluate Transient Dose Rate Effect on a Commercial-off-the-Shelf FPGA[J]. IEEE Transactions on Nuclear Science, 2025, 72(6): 1927-1937.
  3. Li Y, Yoshida M, Gomi Y, et al. Experimental Study of Proton-Induced Radiation Effects on DDR5 Modules[J]. IEEE Transactions on Nuclear Science, 2025, 72(6): 1907-1918.
  4. Li Y., et al. Modeling and Simulation of Transient Dose Rate Effects on Power Distribution Networks of System-in-Package[J]. Nuclear Engineering and Technology, 2025, 57(9): 103652.
  5. Li Y, Guo Y, Li J, et al. Transient Dose Rate Effect Between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study[J]. IEEE Transactions on Nuclear Science, 2023, 70(8): 2106–2115.
  6. Li J, Li Y(Co-first), Guo Y, et al. Investigation of Transient Dose-Rate Effect on High-Speed Comparator SB9696[J]. IEEE Transactions on Nuclear Science, 2023, 70(7): 1459–1469.
  7. Guo Y, Li Y(Co-first), Li J, et al. Experimental Study of Transient Dose Rate Effects of Two Level-Shifting Transceivers and Simulations on Their ESD Circuits[J]. IEEE Transactions on Nuclear Science, 2022, 69(5): 1157–1166.
  8. Li Y, Li J, Guo Y, et al. Experimental Study of Transient Dose Rate Effect on System-in-Package SZ0501[J]. IEEE Transactions on Nuclear Science, 2022, 69(8): 1840–1849.
  9. Li Y, Guo Y, Liao W, Liu J, Peng Z, He C, Li Y, Li P. Simulation of transient dose rate effect on analog phase locked loop[J]. Microelectronics Reliability, 2022, 132: 114531.
  10. Li Y, Guo Y, He C, Liu J, Li Y, Li P. Simulation studies on the transient dose rate effect of analog delay locked loops[J]. Microelectronics Reliability, 2021, 121: 114149.

⬇⬇⬇⬇⬇***Full Publication list***⬇⬇⬇⬇⬇

Submitting Work：

  1. An Investigation of Single Event Effects in DDR5 Memory Induced by Atmospheric Neutrons. （一作）
  2. 三维系统级封装的单粒子效应Geant4模拟方法研究（一作）

2026：

  1. Yihao Wang, Siyu Pu, Yang Li, at. al. Impact of Proton Irradiation on Threshold Switching Dynamics in Niobium Oxide Mott Memristors. IEEE Electron Device Letters.

 

2025：

  1. 向爽，张国和，李洋，等． 3D NAND FLASH 存储器辐射效应研究进展及展望[J]. 微电子学与计算机，2025，42（10）： 85-100．
  2. 彭治钢, 白豪杰, 刘方, 李洋, 何欢, 李培, ... & 李永宏. (2025). 质子累积辐照效应对 CMOS 图像传感器饱和输出的影响. 物理学报, 74(2), 024203-1.
  3. Zhao, Z., Weng, X., Fan, S., Min, R., Li Y., Liu, X., ... & Zhang, G. (2025). High-speed electronics system with timing and amplitude signal acquisition design for multi-channel CdZnTe Array Detector. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 170325.

  4. 李忠良, 卢 溶, 李 洋, 张秋光, 张国和, 温小梅, 屈方园. 系统级封装的瞬时剂量率效应PI-SI联合仿真. 现代应用物理, 2025, 16(3), 030603(1-10).

  5. Li, N., Peng, Z., Mao, C., Qin, F., Li, Y., Li Y.*, ... & He, C. (2025). Experimental Study on Electromagnetic Pulse Sensitivity for Power Modules of FPGAs. Electronics, 14(6), 1167.

  6. 李洋, 等. SZ0501 型系统级封装的瞬时γ辐射和电磁脉冲效应研究进展. (太赫兹科学与电子信息学报,  accept)
  7. Li Y., et al. Modeling and Simulation of Transient Dose Rate Effects on Power Distribution Networks of System-in-Package. Nuclear Engineering and Technology, 2025, 57(9): 103652.
  8. Li Y. Peng Z, Guo Y, et al. Pulsed-Laser Testing to Evaluate Transient Dose Rate Effect on a Commercial-off-the-Shelf FPGA. IEEE Transactions on Nuclear Science, 2025, 72(6): 1927-1937.
  9. Li Y. Yoshida M, Gomi Y, et al. Experimental Study of Proton-Induced Radiation Effects on DDR5 Modules[J]. IEEE Transactions on Nuclear Science, 2025, 72(6): 1907-1918.

2024（No publications. Just find work; write and submit paper.)

2023：

  1. Yang W, Li Y, Guo G, He C, Wu L. Elsevier, 2023. System-on-chip single event effect hardening design and validation using proton irradiation[J]. Nuclear Engineering and Technology, 2023, 55(3): 1015–1020.
  2. Li N, Li Y, Guo Y, He C. Pergamon, 2023. Simulation analysis of electromagnetic pulse susceptibility and hardening design for system-in-package SZ0501[J]. Microelectronics Reliability, 2023, 141: 114892.
  3. Li P, Ma Y, He C, Guo H, Li Y, Guo Y, Dong Z. Institute of Electrical and Electronics Engineers Inc., 2023. Key Factors of Laser-Induced Single Event Transients on Different SiGe Process[J]. IEEE Transactions on Nuclear Science, 2023: 1–1.
  4. Yang W, Li Y, Li Y, Hu Z, Cai J, He C, Wang B, Wu L. MDPI, 2023. Neutron Irradiation Testing and Monte Carlo Simulation of a Xilinx Zynq-7000 System on Chip[J]. Electronics (Switzerland), 2023, 12(9).
  5. Guo Y, Li Y, Peng Z, Liu J, Li P, Li W, He C, Li J, Li R, Li Y. American Institute of Physics Inc., 2023. Feasibility and equivalence analysis of transient dose rate effect simulation by pulsed laser in level-shifting transceiver and TCAD simulation on its ESD circuits[J]. AIP Advances, 2023, 13(4): 45018.
  6. Guo Y, Peng Z, Li Y, Liu J, Li N, Li P, Li Y, He C. Analysis of the transient dose rate effect on clock resources of JXCV5SX95T FPGA[J]. Microelectronics Reliability, 2023, 151(October): 115281.
  7. Li Y, Guo Y, Li J, He C, Peng Z, Liu J, Li R, Zhao H, Chen W, Li Y, Li P, Xiong C. Transient Dose Rate Effect Between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study[J]. IEEE Transactions on Nuclear Science, 2023, 70(8): 2106–2115.
  8. Li J, Li Y, Guo Y, Li R, Chen W, Liu Y, Peng Z, Liu J, He C, Li P. Investigation of Transient Dose-Rate Effect on High-Speed Comparator SB9696[J]. IEEE Transactions on Nuclear Science, 2023, 70(7): 1459–1469.
  9. 郭亚鑫, 李洋, 彭治钢, 白豪杰, 刘佳欣, 李永宏, 贺朝会, 李培. SiGe HBT瞬时剂量率效应实验及仿真研究[J]. 微电子学, 2023, 53(6): 971–980.

2022：

  1. Li Y, Yang W, Wang M, Li Y, Guo Y, Li P, Zhao H, He C, Wang D, Yang Y, Zhang X, An H. Pergamon, 2022. Vulnerability evaluation on 16 nm FinFET Ultrascale+ MPSoC using fault injection and proton irradiation[J]. Microelectronics Reliability, 2022, 133: 114534.
  2. Guo Y, Li Y, Li J, He C, Li R, Li Y, Li P, Liu J. Experimental Study of Transient Dose Rate Effects of Two Level-Shifting Transceivers and Simulations on Their ESD Circuits[J]. IEEE Transactions on Nuclear Science, 2022, 69(5): 1157–1166.
  3. Wei J, Li Y, Liao W, Liu F, Li Y, Liu J, He C, Guo G. IOP Publishing, 2022. Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors[J]. Chinese Physics B, 2022, 31(8): 086106.
  4. Li Y, Guo Y, Liao W, Liu J, Peng Z, He C, Li Y, Li P. Pergamon, 2022. Simulation of transient dose rate effect on analog phase locked loop[J]. Microelectronics Reliability, 2022, 132: 114531.
  5. Li Y, Li J, Guo Y, He C, Li R, Chen W, Liao W, Li Y, Li P, Liu J, Peng Z. Experimental Study of Transient Dose Rate Effect on System-in-Package SZ0501[J]. IEEE Transactions on Nuclear Science, 2022, 69(8): 1840–1849.

2021：

  1. Liao W, He H, Li Y, Liu W, Zang H, Wei J, He C. Korean Nuclear Society, 2021. Effects of electronic energy deposition on pre-existing defects in 6H–SiC[J]. Nuclear Engineering and Technology, 2021, 53(7): 2357–2363.
  2. Li Y, Li Y, Yang Y, Liu F, Wang D. Proton irradiation effect on CMOS APS at Xi’an 200 MeV proton application facility[J]. Modern Applied Physics, 2021, 12(3): 142–146. (In Chinese)
  3. Li Y, Guo Y, He C, Liu J, Li Y, Li P. Elsevier Ltd, 2021. Simulation studies on the transient dose rate effect of analog delay locked loops[J]. Microelectronics Reliability, 2021, 121: 114149.

2020 and before:

  1. Li Y, Yang W, He C, Li Y. IEEE, 2018. Investigation of single event effect susceptibility of inner memory blocks in 28 nm xilinx SoC using 239Pu[C]//2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018. , 2018: 1–4.
  2. Yang W, Li Y, Li Y, Hu Z, Xie F, He C, Wang S, Zhou B, He H, Khan W, Liang T. Elsevier Ltd, 2019. Atmospheric neutron single event effect test on Xilinx 28 nm system on chip at CSNS-BL09[J]. Microelectronics Reliability, 2019, 99: 119–124.
  3. Yang W T, Yin Q, Li Y, Guo G, Li Y H, He C H, Zhang Y W, Zhang F Q, Han J H. Springer Science and Business Media LLC, 2019. Single-event effects induced by medium-energy protons in 28 nm system-on-chip[J]. Nuclear Science and Techniques, 2019, 30(10): 151.
  4. Hu Z L, Yang W T, Li Y H, Li Y, He C H, Wang S L, Zhou B, Yu Q Z, He H, Xie F, Bai Y R, Liang T J. Institute of Physics, Chinese Academy of Sciences, 2019. Atmospheric neutron single event effect in 65 nm microcontroller units by using CSNS-BL09[J]. Wuli Xuebao/Acta Physica Sinica, 2019, 68(23): 238502–1.
  5. Yang W T, Li Y H, Guo Y X, Zhao H Y, Li Y, Li P, He C H, Guo G, Liu J, Yang S S, An H. IOP Publishing Ltd, 2020. Investigation of single event effect in 28-nm system-on-chip with multi patterns[J]. Chinese Physics B, 2020, 29(10): 108504.
  6. Li Y, He C H, Li Y H, Yang W T, Wei J N. Cadence Method for Analyzing Multi-Bit Upset Mechanism of SRAM[J]. Hedianzixue Yu Tance Jishu/Nuclear Electronics and Detection Technology, 2020, 40(4): 661–666. （In Chinese，中文）
  7. Yang W, Li Y, Zhang W, Guo Y, Zhao H, Wei J, Li Y, He C, Chen K, Guo G, Du B, Luca S. Taylor and Francis Inc., 2020. Electron inducing soft errors in 28 nm system-on-Chip[J]. Radiation Effects and Defects in Solids, 2020, 175(7–8): 745–754.
  8. Wei J N, Li Y, Yang W T, He C H, Li Y H, Zang H, Li P, Zhang J X, Guo G. Springer Verlag, 2020. Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation[J]. Science China Technological Sciences, 2020, 63(5): 851–858.

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