李洋

助理教授 、 硕士生导师

访问量：

最后更新时间：--

校内登录

李洋

助理教授 、 硕士生导师：

访问量：

最后更新时间：--

Publications

中文主页
期刊论文

Representative Papers：

  1. 李洋，等. SZ0501 型系统级封装的瞬时γ辐射和电磁脉冲效应研究进展. (太赫兹科学与电子信息学报,  2025, accept)
  2. Li Y, Peng Z, Guo Y, et al. Pulsed-Laser Testing to Evaluate Transient Dose Rate Effect on a Commercial-off-the-Shelf FPGA[J]. IEEE Transactions on Nuclear Science, 2025, 72(6): 1927-1937.
  3. Li Y, Yoshida M, Gomi Y, et al. Experimental Study of Proton-Induced Radiation Effects on DDR5 Modules[J]. IEEE Transactions on Nuclear Science, 2025, 72(6): 1907-1918.
  4. Li Y., et al. Modeling and Simulation of Transient Dose Rate Effects on Power Distribution Networks of System-in-Package[J]. Nuclear Engineering and Technology, 2025, 57(9): 103652.
  5. Li Y, Guo Y, Li J, et al. Transient Dose Rate Effect Between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study[J]. IEEE Transactions on Nuclear Science, 2023, 70(8): 2106–2115.
  6. Li J, Li Y(Co-first), Guo Y, et al. Investigation of Transient Dose-Rate Effect on High-Speed Comparator SB9696[J]. IEEE Transactions on Nuclear Science, 2023, 70(7): 1459–1469.
  7. Guo Y, Li Y(Co-first), Li J, et al. Experimental Study of Transient Dose Rate Effects of Two Level-Shifting Transceivers and Simulations on Their ESD Circuits[J]. IEEE Transactions on Nuclear Science, 2022, 69(5): 1157–1166.
  8. Li Y, Li J, Guo Y, et al. Experimental Study of Transient Dose Rate Effect on System-in-Package SZ0501[J]. IEEE Transactions on Nuclear Science, 2022, 69(8): 1840–1849.
  9. Li Y, Guo Y, Liao W, Liu J, Peng Z, He C, Li Y, Li P. Simulation of transient dose rate effect on analog phase locked loop[J]. Microelectronics Reliability, 2022, 132: 114531.
  10. Li Y, Guo Y, He C, Liu J, Li Y, Li P. Simulation studies on the transient dose rate effect of analog delay locked loops[J]. Microelectronics Reliability, 2021, 121: 114149.

⬇⬇⬇⬇⬇***Full Publication list***⬇⬇⬇⬇⬇

Submitting Work：

  1. An Investigation of Single Event Effects in DDR5 Memory Induced by Atmospheric Neutrons. （一作）
  2. 三维系统级封装的单粒子效应Geant4模拟方法研究（一作）

2026：

  1. Yihao Wang, Siyu Pu, Yang Li, at. al. Impact of Proton Irradiation on Threshold Switching Dynamics in Niobium Oxide Mott Memristors. IEEE Electron Device Letters.

 

2025：

  1. 向爽，张国和，李洋，等． 3D NAND FLASH 存储器辐射效应研究进展及展望[J]. 微电子学与计算机，2025，42（10）： 85-100．
  2. 彭治钢, 白豪杰, 刘方, 李洋, 何欢, 李培, ... & 李永宏. (2025). 质子累积辐照效应对 CMOS 图像传感器饱和输出的影响. 物理学报, 74(2), 024203-1.
  3. Zhao, Z., Weng, X., Fan, S., Min, R., Li Y., Liu, X., ... & Zhang, G. (2025). High-speed electronics system with timing and amplitude signal acquisition design for multi-channel CdZnTe Array Detector. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 170325.

  4. 李忠良, 卢 溶, 李 洋, 张秋光, 张国和, 温小梅, 屈方园. 系统级封装的瞬时剂量率效应PI-SI联合仿真. 现代应用物理, 2025, 16(3), 030603(1-10).

  5. Li, N., Peng, Z., Mao, C., Qin, F., Li, Y., Li Y.*, ... & He, C. (2025). Experimental Study on Electromagnetic Pulse Sensitivity for Power Modules of FPGAs. Electronics, 14(6), 1167.

  6. 李洋, 等. SZ0501 型系统级封装的瞬时γ辐射和电磁脉冲效应研究进展. (太赫兹科学与电子信息学报,  accept)
  7. Li Y., et al. Modeling and Simulation of Transient Dose Rate Effects on Power Distribution Networks of System-in-Package. Nuclear Engineering and Technology, 2025, 57(9): 103652.
  8. Li Y. Peng Z, Guo Y, et al. Pulsed-Laser Testing to Evaluate Transient Dose Rate Effect on a Commercial-off-the-Shelf FPGA. IEEE Transactions on Nuclear Science, 2025, 72(6): 1927-1937.
  9. Li Y. Yoshida M, Gomi Y, et al. Experimental Study of Proton-Induced Radiation Effects on DDR5 Modules[J]. IEEE Transactions on Nuclear Science, 2025, 72(6): 1907-1918.

2024（No publications. Just find work; write and submit paper.)

2023：

  1. Yang W, Li Y, Guo G, He C, Wu L. Elsevier, 2023. System-on-chip single event effect hardening design and validation using proton irradiation[J]. Nuclear Engineering and Technology, 2023, 55(3): 1015–1020.
  2. Li N, Li Y, Guo Y, He C. Pergamon, 2023. Simulation analysis of electromagnetic pulse susceptibility and hardening design for system-in-package SZ0501[J]. Microelectronics Reliability, 2023, 141: 114892.
  3. Li P, Ma Y, He C, Guo H, Li Y, Guo Y, Dong Z. Institute of Electrical and Electronics Engineers Inc., 2023. Key Factors of Laser-Induced Single Event Transients on Different SiGe Process[J]. IEEE Transactions on Nuclear Science, 2023: 1–1.
  4. Yang W, Li Y, Li Y, Hu Z, Cai J, He C, Wang B, Wu L. MDPI, 2023. Neutron Irradiation Testing and Monte Carlo Simulation of a Xilinx Zynq-7000 System on Chip[J]. Electronics (Switzerland), 2023, 12(9).
  5. Guo Y, Li Y, Peng Z, Liu J, Li P, Li W, He C, Li J, Li R, Li Y. American Institute of Physics Inc., 2023. Feasibility and equivalence analysis of transient dose rate effect simulation by pulsed laser in level-shifting transceiver and TCAD simulation on its ESD circuits[J]. AIP Advances, 2023, 13(4): 45018.
  6. Guo Y, Peng Z, Li Y, Liu J, Li N, Li P, Li Y, He C. Analysis of the transient dose rate effect on clock resources of JXCV5SX95T FPGA[J]. Microelectronics Reliability, 2023, 151(October): 115281.
  7. Li Y, Guo Y, Li J, He C, Peng Z, Liu J, Li R, Zhao H, Chen W, Li Y, Li P, Xiong C. Transient Dose Rate Effect Between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study[J]. IEEE Transactions on Nuclear Science, 2023, 70(8): 2106–2115.
  8. Li J, Li Y, Guo Y, Li R, Chen W, Liu Y, Peng Z, Liu J, He C, Li P. Investigation of Transient Dose-Rate Effect on High-Speed Comparator SB9696[J]. IEEE Transactions on Nuclear Science, 2023, 70(7): 1459–1469.
  9. 郭亚鑫, 李洋, 彭治钢, 白豪杰, 刘佳欣, 李永宏, 贺朝会, 李培. SiGe HBT瞬时剂量率效应实验及仿真研究[J]. 微电子学, 2023, 53(6): 971–980.

2022：

  1. Li Y, Yang W, Wang M, Li Y, Guo Y, Li P, Zhao H, He C, Wang D, Yang Y, Zhang X, An H. Pergamon, 2022. Vulnerability evaluation on 16 nm FinFET Ultrascale+ MPSoC using fault injection and proton irradiation[J]. Microelectronics Reliability, 2022, 133: 114534.
  2. Guo Y, Li Y, Li J, He C, Li R, Li Y, Li P, Liu J. Experimental Study of Transient Dose Rate Effects of Two Level-Shifting Transceivers and Simulations on Their ESD Circuits[J]. IEEE Transactions on Nuclear Science, 2022, 69(5): 1157–1166.
  3. Wei J, Li Y, Liao W, Liu F, Li Y, Liu J, He C, Guo G. IOP Publishing, 2022. Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors[J]. Chinese Physics B, 2022, 31(8): 086106.
  4. Li Y, Guo Y, Liao W, Liu J, Peng Z, He C, Li Y, Li P. Pergamon, 2022. Simulation of transient dose rate effect on analog phase locked loop[J]. Microelectronics Reliability, 2022, 132: 114531.
  5. Li Y, Li J, Guo Y, He C, Li R, Chen W, Liao W, Li Y, Li P, Liu J, Peng Z. Experimental Study of Transient Dose Rate Effect on System-in-Package SZ0501[J]. IEEE Transactions on Nuclear Science, 2022, 69(8): 1840–1849.

2021：

  1. Liao W, He H, Li Y, Liu W, Zang H, Wei J, He C. Korean Nuclear Society, 2021. Effects of electronic energy deposition on pre-existing defects in 6H–SiC[J]. Nuclear Engineering and Technology, 2021, 53(7): 2357–2363.
  2. Li Y, Li Y, Yang Y, Liu F, Wang D. Proton irradiation effect on CMOS APS at Xi’an 200 MeV proton application facility[J]. Modern Applied Physics, 2021, 12(3): 142–146. (In Chinese)
  3. Li Y, Guo Y, He C, Liu J, Li Y, Li P. Elsevier Ltd, 2021. Simulation studies on the transient dose rate effect of analog delay locked loops[J]. Microelectronics Reliability, 2021, 121: 114149.

2020 and before:

  1. Li Y, Yang W, He C, Li Y. IEEE, 2018. Investigation of single event effect susceptibility of inner memory blocks in 28 nm xilinx SoC using 239Pu[C]//2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018. , 2018: 1–4.
  2. Yang W, Li Y, Li Y, Hu Z, Xie F, He C, Wang S, Zhou B, He H, Khan W, Liang T. Elsevier Ltd, 2019. Atmospheric neutron single event effect test on Xilinx 28 nm system on chip at CSNS-BL09[J]. Microelectronics Reliability, 2019, 99: 119–124.
  3. Yang W T, Yin Q, Li Y, Guo G, Li Y H, He C H, Zhang Y W, Zhang F Q, Han J H. Springer Science and Business Media LLC, 2019. Single-event effects induced by medium-energy protons in 28 nm system-on-chip[J]. Nuclear Science and Techniques, 2019, 30(10): 151.
  4. Hu Z L, Yang W T, Li Y H, Li Y, He C H, Wang S L, Zhou B, Yu Q Z, He H, Xie F, Bai Y R, Liang T J. Institute of Physics, Chinese Academy of Sciences, 2019. Atmospheric neutron single event effect in 65 nm microcontroller units by using CSNS-BL09[J]. Wuli Xuebao/Acta Physica Sinica, 2019, 68(23): 238502–1.
  5. Yang W T, Li Y H, Guo Y X, Zhao H Y, Li Y, Li P, He C H, Guo G, Liu J, Yang S S, An H. IOP Publishing Ltd, 2020. Investigation of single event effect in 28-nm system-on-chip with multi patterns[J]. Chinese Physics B, 2020, 29(10): 108504.
  6. Li Y, He C H, Li Y H, Yang W T, Wei J N. Cadence Method for Analyzing Multi-Bit Upset Mechanism of SRAM[J]. Hedianzixue Yu Tance Jishu/Nuclear Electronics and Detection Technology, 2020, 40(4): 661–666. （In Chinese，中文）
  7. Yang W, Li Y, Zhang W, Guo Y, Zhao H, Wei J, Li Y, He C, Chen K, Guo G, Du B, Luca S. Taylor and Francis Inc., 2020. Electron inducing soft errors in 28 nm system-on-Chip[J]. Radiation Effects and Defects in Solids, 2020, 175(7–8): 745–754.
  8. Wei J N, Li Y, Yang W T, He C H, Li Y H, Zang H, Li P, Zhang J X, Guo G. Springer Verlag, 2020. Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation[J]. Science China Technological Sciences, 2020, 63(5): 851–858.
会议论文

2025：

  1. Li Y, et al., ICREED2025, Yangzhou, Zhejiang Provi, April. （Oral speech）
  2. 李洋，李亚勇，向爽，等. 第十六届全国抗辐射电子学与电磁脉冲学术交流会，伊犁，新疆，7月22日-7月26日.（口头报告）
  3. 李洋，李亚勇，向爽，等. 第四届全国集成微系统建模与仿真学术交流会（IMMS 2025），湖州，浙江，8月22日-8月24日.（口头报告）

2024：

  1. 李洋，等. 第六届全国辐射物理学术交流会（CRPS`2024）, 西昌, 四川, 8月.（口头报告）

2021：

  1. Li Y, et al., ICREED2021, Xi'an, Shaanxi Provi, April. （Oral speech）
  2. 李洋，等. 第四届全国辐射物理学术交流会（CRPS`2021）, 烟台, 山东, 8月.（海报）
  3. 李洋，等. 第二届全国集成微系统建模与仿真学术交流会（IMMS 2021）, 南京, 山东, 8月.（口头报告）

 

发明专利
  1. 贺朝会, 李洋, 郭亚鑫, 李永宏. 2020一种电子学系统总剂量效应的系统级仿真方法: 中国, 202011099076[P]. , 2020.
  2. 贺朝会, 李洋, 李永宏, 赵浩昱. 2019一种基于ibis模型模拟系统级封装剂量率效应的方法: 中国, 201910704149[P]. , 2019.
  3. 李俊霖, 李洋, 郭亚鑫, 贺朝会, 陈伟, 李瑞宾, 李维, 刘炜剑. 一种系统级封装瞬时剂量率效应的硬件测试系统及方法, 2024-3-27, 中国, 2024103600701.
  4. 贺朝会, 卢溶, 李洋, 郭亚鑫, 李永宏, 李培, 何欢. 一种瞬时剂量率效应PI-SI的仿真方法、系统与设备, 2024-5-10, 中国, 2024105767121.
  5. 贺朝会，罗广宇，李洋,  等．一种系统封装单粒子效应的故障注入方法及系统、系统与设备：2025104556429.

版权所有：西安交通大学 陕ICP备05001571号