The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique
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发布时间：2025-04-30
发布时间：2025-04-30
论文名称：The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique
发表刊物：IEEE Electron Device Letters
合写作者：Zheng Chai; Weidong Zhang; Pedro Freitas; Firas Hatem; Jian Fu Zhang; John Marsland; Bogdan Govoreanu; Ludovic Goux; Gouri Sankar Kar; Steve Hall; Paul Chalker; John Robertson
卷号：Volume: 39, Issue: 7
页面范围：955 - 958
是否译文：否
发表时间：2018-05-04